Patent EP0318315A2 successfully refreshed from Google Patents.
EP0318315A2
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Process for making thin film solar cell
Assignee: Shell Erneuerbare Energien GmbH
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Filing: 1988-11-25
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Granted: —
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Expires: 2008-11-25
Abstract
Abstract A method of making group I-III-VI compound semiconductors such as copper indium diselenide for use in thin film heterojunction photovoltaic devices comprising depositing a composite film of copper, indium, and possibly other group IIIA elements, upon a substrate, depositing a separate film of selenium on the composite film and then heating the substrate in the presence of a gas containing hydrogen to form the compound semiconductor material.
Inventors
- 👤 Chris Eberspacher
- 👤 James H. Ermer
- 👤 Kim W. Mitchell
- 👤 Gary A. Pollock
- 👤 David N. Pier
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 11:37
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10P; H10P14/00; H10P14/20; H10P14/203; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3436; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
66 words
A method for making a semiconducting film comprising: depositing a composite film of copper and indium onto a substrate; depositing a film of selenium onto the composite copper and indium film; and heating the substrate in the presence of a hydrogen containing gas for a time and a temperature sufficient to cause interdiffusion of copper, indium and selenium to form a semiconductor of the class CuInSe₂.
Claim 2
Independent Claim
66 words
A method for making a semiconducting film comprising: depositing a composite film of copper and indium onto a substrate; depositing a film of selenium onto the composite copper and indium film; and heating the substrate in the presence of a hydrogen containing gas for a time and a temperature sufficient to cause interdiffusion of copper, indium and selenium to form a semiconductor of the class CuInSe₂.
Claim 3
Dependent Claim
25 words
A method according the Claim 1 wherein the hydrogen containing gas is a mixture of hydrogen and one or more of argon, nitrogen, and helium.
Claim 4
Dependent Claim
13 words
A method according to Claim 1 wherein the hydrogen containing gas comprises H₂Se.
Claim 5
Dependent Claim
13 words
A method according to Claim 1 wherein the hydrogen containing gas comprises H₂S.
Claim 6
Dependent Claim
120 words
A semiconductor thin film formed on a substrate by the method comprising: depositing a composite film of copper and indium on a substrate, said film having an atomic copper to indium ratio of about one, depositing a film of selenium on said composite copper indium film, said selenium film thickness selected to provide an atomic ratio of selenium to copper and indium of less than one, and heating said substrate with said composite copper indium film and said selenium film in the presence of H₂S gas for a time and at a temperature sufficient to cause interdiffusion of copper, indium, selenium and sulfur to form a semiconductor of the class CuInSe 2-x S x where x is less than two.
Claim 7
Dependent Claim
120 words
A semiconductor thin film formed on a substrate by the method comprising: depositing a composite film of copper and indium on a substrate, said film having an atomic copper to indium ratio of about one, depositing a film of selenium on said composite copper indium film, said selenium film thickness selected to provide an atomic ratio of selenium to copper and indium of less than one, and heating said substrate with said composite copper indium film and said selenium film in the presence of H₂S gas for a time and at a temperature sufficient to cause interdiffusion of copper, indium, selenium and sulfur to form a semiconductor of the class CuInSe 2-x S x where x is less than two.
Claim 8
Independent Claim
68 words
A method for making a semiconducting film comprising: depositing onto a substrate a composite film of copper, indium and at least one element selected from gallium and aluminum; depositing a film of selenium onto said composite film; and heating the substrate in the presence of a hydrogen containing gas for a time and a temperature sufficient to cause interdiffusion of selenium and the elements comprising the composite film.
Claim 9
Independent Claim
68 words
A method for making a semiconducting film comprising: depositing onto a substrate a composite film of copper, indium and at least one element selected from gallium and aluminum; depositing a film of selenium onto said composite film; and heating the substrate in the presence of a hydrogen containing gas for a time and a temperature sufficient to cause interdiffusion of selenium and the elements comprising the composite film.
Claim 10
Dependent Claim
25 words
A method according the Claim 6 wherein the hydrogen containing gas is a mixture of hydrogen and one or more of argon, nitrogen, and helium.
Claim 11
Dependent Claim
13 words
A method according to Claim 6 wherein the hydrogen containing gas comprises H₂Se.
Claim 12
Dependent Claim
13 words
A method according to Claim 6 wherein the hydrogen containing gas comprises H₂S.
Claim 13
Dependent Claim
122 words
A semiconducting thin film formed on a substrate by the method comprising: depositing onto a substrate a composite film of copper, indium and at least one element selected from the group consisting of gallium and aluminum, said film having an atomic ratio of copper to the other elements of about one, depositing a film of selenium on said composite film, said selenium film thickness selected to provide an atomic ratio of selenium to the elements comprising the composite film of less than one, and heating said substrate with said composite film and said selenium film in the presence of H₂S gas for a time and at a temperature sufficient to cause interdiffusion of selenium, sulfur and the elements comprising the composite film.
Claim 14
Dependent Claim
122 words
A semiconducting thin film formed on a substrate by the method comprising: depositing onto a substrate a composite film of copper, indium and at least one element selected from the group consisting of gallium and aluminum, said film having an atomic ratio of copper to the other elements of about one, depositing a film of selenium on said composite film, said selenium film thickness selected to provide an atomic ratio of selenium to the elements comprising the composite film of less than one, and heating said substrate with said composite film and said selenium film in the presence of H₂S gas for a time and at a temperature sufficient to cause interdiffusion of selenium, sulfur and the elements comprising the composite film.
References Cited (Backward Citations)
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