Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
116 words
An epitaxial wafer comprising of a single crystalline substrate (1), a p type gallium aluminum arsenide mixed crystalline layer (2) and an n type gallium aluminum arsenide mixed crystalline layer (6) having an indirect transition type band structure, wherein said p type gallium aluminum arsenide mixed crystalline layer (2) consists of a gallium aluminum arsenide mixed crystalline layer (4) having a direct transition type band structure, extending from the pn junction (5) and a gallium aluminum arsenide mixed crystalline layer (3) having an indirect transition type band structure, and the aluminum arsenide mixed crystal ratio in the gallium aluminum arsenide being exponentially and/or gradually changed in the region between the layer (4) and the layer (3).
Claim 2
Dependent Claim
116 words
An epitaxial wafer comprising of a single crystalline substrate (1), a p type gallium aluminum arsenide mixed crystalline layer (2) and an n type gallium aluminum arsenide mixed crystalline layer (6) having an indirect transition type band structure, wherein said p type gallium aluminum arsenide mixed crystalline layer (2) consists of a gallium aluminum arsenide mixed crystalline layer (4) having a direct transition type band structure, extending from the pn junction (5) and a gallium aluminum arsenide mixed crystalline layer (3) having an indirect transition type band structure, and the aluminum arsenide mixed crystal ratio in the gallium aluminum arsenide being exponentially and/or gradually changed in the region between the layer (4) and the layer (3).
Claim 3
Dependent Claim
27 words
An epitaxial wafer according to claim 1, wherein the thickness of the p type gallium aluminum arsenide mixed crystalline layer (2) is about 15 to 50 µm.
Claim 4
Dependent Claim
28 words
An epitaxial wafer according to claim 1, wherein the average aluminum arsenide mixed crystal ratio x in the p type layer (2) is 0.45 < x ≦ 0.65.
Claim 5
Dependent Claim
21 words
An epitaxial wafer according to claim 1, wherein the thickness of the n type layer (6) is 20 to 100 µm.
Claim 6
Dependent Claim
27 words
An epitaxial wafer according to claim 1, wherein the aluminum arsenide mixed crystal ratio x of the n type layer (6) is 0.5 ≦ x ≦ 0.8.
Claim 7
Dependent Claim
25 words
An epitaxial wafer according to claim 1, wherein the aluminum arsenide mixed crystal ratio x in the layer (3) is 0.5 ≦ x ≦ 0.8.
Claim 8
Dependent Claim
20 words
An epitaxial wafer according to claim 1, wherein the thickness of the layer (4) is about 3 to 10 µm.
Claim 9
Dependent Claim
21 words
An epitaxial wafer according to claim 1, wherein the single crystalline substrate is one of GaAs, GaP, InP, Si and Ge.
Claim 10
Dependent Claim
18 words
An epitaxial wafer according to claim 8, wherein the single crystalline substrate has a surface orientation of {100}.