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EP0317161A2
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Semiconductor memory device having an aluminium-based metallization film and a refractory metal silicide-based metallization film
Assignee: Fujitsu Ltd
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Filing: 1988-11-09
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Granted: —
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Expires: 2008-11-09
Abstract
Abstract A semiconductor memory device includes a plurality of bit lines (30₁, 30₂) formed on an interlayer insulation film (17) and arranged with a first pitch (P1) defining a distance between neighboring bit lines, and word lines (24₁ - 24₃) which are formed on an insulation film (23) formed on the bit lines (30₁, 30₂) and which are arranged with a second pitch defining a distance between neighboring word lines. One of the bit and word lines which has a relatively wide pitch (P2) comprises an aluminum-based metallization film, and the other line (30₁, 30₂) which has a relatively narrow pitch (P1) comprises a refractory metal silicide-based metallization film (21₁, 22₁).
Inventors
- 👤 Taiji Ema
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 23:18
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; H10B12/01; H10B12/02; H10B12/03; H10B12/33; H10B12/48; H10B12/482; H10B12/488
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
189 words
A semiconductor memory device comprising a semiconductor substrate (11); a first insulation film (17) having a contact hole; a plurality of gate electrodes (14₁, 14₂, 14₃) provided so as to be surrounded by the first insulation film; a storage capacitor layer (18₁, 19₁) including a pair of electrodes (18₁, 19₁) , one of the pair of electrodes being in contact with the semiconductor substrate (11) through the contact hole; an interlayer insulation film (20) formed on the storage capacitor layer; a plurality of bit lines (30₁, 30₂) formed on the interlayer insulation film and arranged with a first pitch (P1) defining a distance between neighboring bit lines; a second insulation film (23) formed on the bit lines; and a plurality of word lines (24₁, 24₂, 24₃) formed on the second insulation film (23) and arranged with a second pitch (P2) defining a distance between neighboring word lines, characterized in that one of the bit and word lines which has a relatively wide pitch (P2) comprises an aluminum-based metallization film, and the other line which has a relatively narrow pitch (P1) comprises a refractory metal silicide-based metallization film (21₁, 21₂).
Claim 2
Dependent Claim
189 words
A semiconductor memory device comprising a semiconductor substrate (11); a first insulation film (17) having a contact hole; a plurality of gate electrodes (14₁, 14₂, 14₃) provided so as to be surrounded by the first insulation film; a storage capacitor layer (18₁, 19₁) including a pair of electrodes (18₁, 19₁) , one of the pair of electrodes being in contact with the semiconductor substrate (11) through the contact hole; an interlayer insulation film (20) formed on the storage capacitor layer; a plurality of bit lines (30₁, 30₂) formed on the interlayer insulation film and arranged with a first pitch (P1) defining a distance between neighboring bit lines; a second insulation film (23) formed on the bit lines; and a plurality of word lines (24₁, 24₂, 24₃) formed on the second insulation film (23) and arranged with a second pitch (P2) defining a distance between neighboring word lines, characterized in that one of the bit and word lines which has a relatively wide pitch (P2) comprises an aluminum-based metallization film, and the other line which has a relatively narrow pitch (P1) comprises a refractory metal silicide-based metallization film (21₁, 21₂).
Claim 3
Dependent Claim
57 words
A semiconductor memory device as claimed in claim 1, characterized in that the first pitch (P1) of the bit lines (30₁, 30₂) is narrower than the second pitch (P2) of the word lines (24₁ - 24₃), so that the bit lines comprises the refractory metal silicide-based metallization films, and word lines comprises by the aluminum-based metallization films.
Claim 4
Dependent Claim
41 words
A semiconductor memory device as claimed in any of claims 1 and 2, characterized in that the refractory metal silicide-based film (22₁, 22₂) comprises a material selected from the group consisting of tungsten silicide, molybdenum silicide, tantalum silicide and titanium silicide.
Claim 5
Dependent Claim
33 words
A semiconductor memory device as claimed in any of claims 1 to 3, characterized in that the word lines (24₁ - 24₃) are electrically connected to the corresponding gate electrodes (14₁ - 14₃).
Claim 6
Dependent Claim
33 words
A semiconductor memory device as claimed in any of claims 1 to 4, characterized in that the aluminum-based metallization film (24₁ - 24₃) of the word line contains silicon as a minor component.
Claim 7
Dependent Claim
45 words
A semiconductor memory device as claimed in any of claims 1 to 5, characterized in that the refractory metal silicide-based metallization film (21₁, 22₁) comprises a refractory metal silicide film (22₁), and a polysilicon film on which the refractory metal silicide film (22₁) is stacked.
Claim 8
Dependent Claim
149 words
A semiconductor memory device comprising a semiconductor substrate (11); a first insulation film (17) having a contact hole; a plurality of gate electrodes (44₁, 44₂) provided so as to be surrounded by the first insulation film and arranged with a first pitch defining a distance between neighboring gate electrodes; a storage capacitor layer (18₁, 19₁) including a pair of electrodes, one (18₁) of the pair of electrodes being in contact with the semiconductor substrate through the contact hole; an interlayer insulation film (19₁) formed so as to cover the storage capacitor layer; and a plurality of bit lines (22 1A ) formed on the interlayer insulation film (20) and arranged with a second pitch defining a distance between neighboring bit lines, characterized in that each of the gate electrodes (44₁, 44₂) comprises a refractory metal silicide-based metallization film, and each of the bit lines comprises an aluminum-based metallization film.
Claim 9
Dependent Claim
149 words
A semiconductor memory device comprising a semiconductor substrate (11); a first insulation film (17) having a contact hole; a plurality of gate electrodes (44₁, 44₂) provided so as to be surrounded by the first insulation film and arranged with a first pitch defining a distance between neighboring gate electrodes; a storage capacitor layer (18₁, 19₁) including a pair of electrodes, one (18₁) of the pair of electrodes being in contact with the semiconductor substrate through the contact hole; an interlayer insulation film (19₁) formed so as to cover the storage capacitor layer; and a plurality of bit lines (22 1A ) formed on the interlayer insulation film (20) and arranged with a second pitch defining a distance between neighboring bit lines, characterized in that each of the gate electrodes (44₁, 44₂) comprises a refractory metal silicide-based metallization film, and each of the bit lines comprises an aluminum-based metallization film.
Claim 10
Dependent Claim
48 words
A semiconductor memory device as claimed in claim 7, characterized in that the refractory metal silicide based-metallization film (44₁; 44₂) comprises a polysilicon film (44 1A ; 44 2A ) and a refractory metal silicide film (44 1B , 44 2B ) which are stacked in this sequence.
References Cited (Backward Citations)
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