Patent US3082890A successfully refreshed from Google Patents.
Patent EP0317124A2 successfully refreshed from Google Patents.
EP0317124A2
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EP
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Silicon on insulator semiconductor components containing thin synthetic diamond films
Assignee: Crystallume
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Filing: 1988-11-02
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Granted: —
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Expires: 2008-11-02
Abstract
Abstract A process is provided for making a semiconductor element comprising a single-crystal layer of silicon (12) on a diamond insulator (13).
Inventors
- 👤 Kramadhati Venkata Ravi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 16:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10P50/00; H10P50/60; H10P50/64; H10P50/642; Y; Y10; Y10S; Y10S148/00; Y10S148/135
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
103 words
A process for making a semiconductor element comprising a single-crystal layer of a silicon on a diamond insulator comprising the steps of: diffusing into one surface of a substrate an etch-stop material which is not etchable by at least one etching process which etches the substrate, thereby forming a diffusion-prepared layer; epitaxially depositing a silicon layer onto the diffusion-prepared layer of the substrate; depositing a diamond layer onto the silicon layer; removing the substrate by an etching process which does not etch the etch-stop material whereby etching ceases at the diffusion-prepared layer; and selectively removing the diffusion-prepared layer to form the semiconductor element.
Claim 2
Dependent Claim
103 words
A process for making a semiconductor element comprising a single-crystal layer of a silicon on a diamond insulator comprising the steps of: diffusing into one surface of a substrate an etch-stop material which is not etchable by at least one etching process which etches the substrate, thereby forming a diffusion-prepared layer; epitaxially depositing a silicon layer onto the diffusion-prepared layer of the substrate; depositing a diamond layer onto the silicon layer; removing the substrate by an etching process which does not etch the etch-stop material whereby etching ceases at the diffusion-prepared layer; and selectively removing the diffusion-prepared layer to form the semiconductor element.
Claim 3
Dependent Claim
28 words
A process as claimed in claim 1 further comprising depositing onto the diamond layer at least one support layer wherein the semiconductor element further comprises the support layer.
Claim 4
Dependent Claim
27 words
A process as claimed in claim 1 or claim 2 wherein the substrate comprises silicon, and the etch-stop material comprises a boron-diffused layer on the silicon substrate.
Claim 5
Dependent Claim
16 words
A process as claimed in claim 2 or claim 3 wherein the support layer comprises polysilicon.
Claim 6
Dependent Claim
28 words
A process as claimed in any one of the preceding claims wherein the silicon film is of uniform thickness in the range of from 1 to 2 micrometres.
Claim 7
Independent Claim
126 words
A method for making a semiconductor element comprising a plurality of silicon wafers separated from each other by insulating diamond channels, comprising the steps of: providing a multilayered component comprising, in order, a silicon layer, a synthetic diamond layer, and a support layer; etching a predetermined pattern of grooves into the silicon layer to form a corresponding exposed pattern on one surface of the diamond layer; depositing synthetic diamond upon the resultant grooved silicon surface wherein the grooves and the silicon surface are filled and covered with diamond to form subsurface islands of silicon; applying a photoresist over the resultant diamond surface and exposing and developing the photoresist whereby the photoresist remains only upon the diamond-filled grooves; etching away exposed diamond; and removing the remaining photorest
Claim 8
Independent Claim
126 words
A method for making a semiconductor element comprising a plurality of silicon wafers separated from each other by insulating diamond channels, comprising the steps of: providing a multilayered component comprising, in order, a silicon layer, a synthetic diamond layer, and a support layer; etching a predetermined pattern of grooves into the silicon layer to form a corresponding exposed pattern on one surface of the diamond layer; depositing synthetic diamond upon the resultant grooved silicon surface wherein the grooves and the silicon surface are filled and covered with diamond to form subsurface islands of silicon; applying a photoresist over the resultant diamond surface and exposing and developing the photoresist whereby the photoresist remains only upon the diamond-filled grooves; etching away exposed diamond; and removing the remaining photorest
Claim 9
Independent Claim
86 words
A method for making semicondutor elements comprising a plurality of gallium-arsenide wafers on a common silicon layer, each wafer laterally separated from adjacent wafers by insulating synthetic diamond; comprising the steps of: providing a multilayer component comprising, in order, a first synthetic diamond layer, a silicon layer, a second synthetic diamond layer, and a support layer; etching a predetermined pattern of grooves into the first diamond layer whereby the surface on the bottom of the grooves comprises the silicon layer; and filling the grooves with gallium-arsenide.
Claim 10
Independent Claim
86 words
A method for making semicondutor elements comprising a plurality of gallium-arsenide wafers on a common silicon layer, each wafer laterally separated from adjacent wafers by insulating synthetic diamond; comprising the steps of: providing a multilayer component comprising, in order, a first synthetic diamond layer, a silicon layer, a second synthetic diamond layer, and a support layer; etching a predetermined pattern of grooves into the first diamond layer whereby the surface on the bottom of the grooves comprises the silicon layer; and filling the grooves with gallium-arsenide.
Claim 11
Independent Claim
146 words
A method of making a semiconductor element comprising a plurality of stacked semiconductors, each such stack being separated from the other by synthetic diamond, and adjacent stacks being separated by air or suitably nonconducting material of high dielectric constant; comprising the steps of: providing a multilayer component, comprising, in order a first synthetic diamond layer, a silicon layer, a second synthetic diamond layer; etching a predetermined pattern of grooves through the first diamond layer to form grooves whereby the surface and the bottom of the grooves comprises silicon; depositing polysilicon whereby the grooves are filled and the first diamond layer is overlayed with the polysilicon layer; curing the polysilicon with heat to form a single-crystal monolith; etching a predetermined pattern through the single-crystal silicon monolith and the silicon layer to form troughs whereby the surfaces at the bottom of the troughs comprise the second diamond layer.
Claim 12
Independent Claim
146 words
A method of making a semiconductor element comprising a plurality of stacked semiconductors, each such stack being separated from the other by synthetic diamond, and adjacent stacks being separated by air or suitably nonconducting material of high dielectric constant; comprising the steps of: providing a multilayer component, comprising, in order a first synthetic diamond layer, a silicon layer, a second synthetic diamond layer; etching a predetermined pattern of grooves through the first diamond layer to form grooves whereby the surface and the bottom of the grooves comprises silicon; depositing polysilicon whereby the grooves are filled and the first diamond layer is overlayed with the polysilicon layer; curing the polysilicon with heat to form a single-crystal monolith; etching a predetermined pattern through the single-crystal silicon monolith and the silicon layer to form troughs whereby the surfaces at the bottom of the troughs comprise the second diamond layer.
Claim 13
Dependent Claim
24 words
A semiconductor element comprising a semiconductor material supported by a substrate, wherein a diamond layer is disposed between the semiconducting material and the substrate.
Claim 14
Dependent Claim
24 words
A semiconductor element comprising a semiconductor material supported by a substrate, wherein a diamond layer is disposed between the semiconducting material and the substrate.
Claim 15
Dependent Claim
40 words
A multilayer semiconductor component comprising a diamond layer over a substrate and a plurality of separate semiconductor elements disposed upon and in contact with the diamond layer wherein the semiconductor elements are adjacently insulated from one another with synthetic diamond.
Claim 16
Dependent Claim
40 words
A multilayer semiconductor component comprising a diamond layer over a substrate and a plurality of separate semiconductor elements disposed upon and in contact with the diamond layer wherein the semiconductor elements are adjacently insulated from one another with synthetic diamond.
Claim 17
Dependent Claim
28 words
A multilayer semiconductor electronic component comprising, in order, a substrate, a diamond layer, a silicon layer and a layer comprising wafers of semiconductor material separated by diamond insulation.
Claim 18
Dependent Claim
28 words
A multilayer semiconductor electronic component comprising, in order, a substrate, a diamond layer, a silicon layer and a layer comprising wafers of semiconductor material separated by diamond insulation.
Claim 19
Dependent Claim
46 words
A multilayer semiconductor electronic component comprising, in order, a substrate, a diamond layer and a plurality of separate multilayered wafers upon the diamond layer, each wafer comprising, in order, a first silicon wafer in contact with the diamond layer, a diamond wafer and a silicon wafer.
Claim 20
Dependent Claim
46 words
A multilayer semiconductor electronic component comprising, in order, a substrate, a diamond layer and a plurality of separate multilayered wafers upon the diamond layer, each wafer comprising, in order, a first silicon wafer in contact with the diamond layer, a diamond wafer and a silicon wafer.
Claim 21
Dependent Claim
18 words
A semiconductor component as claimed in any one of claims 9 to 11 wherein the substrate comprises polysilicon.
Claim 22
Dependent Claim
14 words
A component as claimed in Claim 11 wherein the semiconductor material comprises gallium arsenide.
References Cited (Backward Citations)
No citation records indexed.
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