Patent EP0311419A2 successfully refreshed from Google Patents.
EP0311419A2
Expired / Lapsed
EP
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Semiconductor device having bipolar transistor and method of producing the same
Assignee: Fujitsu Ltd
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Filing: 1988-10-07
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Granted: —
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Expires: 2008-10-07
Abstract
Abstract A semiconductor device has a base substrate (1, 13, 13N) made of a conductor or a semiconductor, an insulator layer (2, 12) formed on the base substrate, an active layer (3, 11, 11P) made of a semiconductor and formed on the insulator layer, where the active layer at least has a bipolar transistor formed therein having a base region, an emitter region and a collector region in the active layer, and a voltage source (Vr) for applying a potential difference across the base substrate and the active layer in such a direction that an electric-field-induced layer (20) is formed in the active layer in a vicinity of an interface between the insulator layer and the active layer. The electric-field-induced layer is used as a portion of a collector electrode of the bipolar transistor.
Inventors
- 👤 Hiroshi Gotou
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 04:14
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D10/00; H10D10/311; H10D64/23; H10W; H10W15/00; H10W15/01
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
148 words
A semiconductor device comprising a base substrate (1, 13, 13N) made of a conductor or a semiconductor, an insulator layer (2, 12) formed on said base substrate, and an active layer (3, 11, 11P) made of a semiconductor and formed on said insulator layer, said active layer at least having a bipolar transistor formed therein, said bipolar transistor having a base region, an emitter region and a collector region in said active layer, characterized in that there is provided: means (Vr) for applying a potential difference across said base substrate (1, 13, 13N) and said active layer (3, 11, 11P) in such a direction that an electric-field-induced layer (4, 20) is formed in said active layer in a vicinity of an interface between said insulator layer (2, 12) and said active layer, said electric-field-induced layer being used as a portion of a collector electrode of said bipolar transistor.
Claim 2
Dependent Claim
148 words
A semiconductor device comprising a base substrate (1, 13, 13N) made of a conductor or a semiconductor, an insulator layer (2, 12) formed on said base substrate, and an active layer (3, 11, 11P) made of a semiconductor and formed on said insulator layer, said active layer at least having a bipolar transistor formed therein, said bipolar transistor having a base region, an emitter region and a collector region in said active layer, characterized in that there is provided: means (Vr) for applying a potential difference across said base substrate (1, 13, 13N) and said active layer (3, 11, 11P) in such a direction that an electric-field-induced layer (4, 20) is formed in said active layer in a vicinity of an interface between said insulator layer (2, 12) and said active layer, said electric-field-induced layer being used as a portion of a collector electrode of said bipolar transistor.
Claim 3
Dependent Claim
68 words
A semiconductor device as claimed in claim 1, characterized in that said active layer (11) is made of an n-type semiconductor, said base region has a p-type region (17) formed in said active layer, said emitter region has an n-type region (18) formed in said p-type region, and said collector region has a diffusion region (16) formed in said active layer and connecting to said electric-field-induced layer (20).
Claim 4
Dependent Claim
21 words
A semiconductor device as claimed in claim 2, characterized in that said base substrate (13) is made of a p-type semiconductor.
Claim 5
Dependent Claim
21 words
A semiconductor device as claimed in claim 2, characterized in that said base substrate (13N) is made of an n-type semiconductor.
Claim 6
Dependent Claim
42 words
A semiconductor device as claimed in claim 2, characterized in that there is further provided an insulator region (14) for isolating said bipolar transistor, said insulator region extending from a top of said active layer (11, 11P) to said insulator layer (12).
Claim 7
Dependent Claim
29 words
A semiconductor device as claimed in claim 5, characterized in that said insulator region (14) makes direct contact with said active layer (11, 11P) and said electric-field-induced layer (20).
Claim 8
Dependent Claim
47 words
A semiconductor device as claimed in any of claims 1 to 6, characterized in that there is further provided a diffusion region (25) formed in said active layer (11, 11P) in a vicinity of the interface between said insulator layer (12) and said active layer (13, 13N).
Claim 9
Dependent Claim
74 words
A semiconductor device as claimed in claim 1, characterized in that said active layer (11P) is made of a p-type semiconductor, said base region has a p-type region (17) formed in said active layer and reaching said insulator layer (12), said emitter region has an n-type region (18) formed in said p-type region, and said collector region has a diffusion region (16) formed in said active layer and connecting to said electric-field-induced layer (20).
Claim 10
Dependent Claim
21 words
A semiconductor device as claimed in claim 8, characterized in that said base substrate (13) is made of a p-type semiconductor.
Claim 11
Dependent Claim
41 words
A semiconductor device as claimed in claim 8, characterized in that there is further provided an insulator region (14) for isolating said bipolar transistor, said insulator region extending from a top of said active layer (11P) to said insulator layer (12).
Claim 12
Dependent Claim
28 words
A semiconductor device as claimed in claim 10, characterized in that said insulator region (14) makes direct contact with said active layer (11P) and said electric-field-induced layer (20).
Claim 13
Independent Claim
188 words
A method of producing a semiconductor device, characterized in that said method comprises the steps of: preparing a stacked structure made up of a base substrate made of a conductor or a semiconductor, a first insulator layer formed on said base substrate and an active layer made of a semiconductor and formed on said first insulator layer; forming a U-shaped groove in said active layer to said first insulator layer by an etching; filling said U-shaped groove by an insulator to form an insulator region; forming a diffusion region in said active layer adjacent to said U-shaped groove by an anisotropic etching and a thermal diffusion; forming a base region in said active layer by an ion implantation and a thermal diffusion; forming an emitter region in said base region by an ion implantation and a thermal diffusion; forming a second insulator layer on said active layer; forming three contact holes in said second insulator layer at positions respectively corresponding to said base region, said emitter region and said diffusion layer; and forming a base electrode, an emitter electrode and a collector electrode at said three contact holes.
Claim 14
Independent Claim
188 words
A method of producing a semiconductor device, characterized in that said method comprises the steps of: preparing a stacked structure made up of a base substrate made of a conductor or a semiconductor, a first insulator layer formed on said base substrate and an active layer made of a semiconductor and formed on said first insulator layer; forming a U-shaped groove in said active layer to said first insulator layer by an etching; filling said U-shaped groove by an insulator to form an insulator region; forming a diffusion region in said active layer adjacent to said U-shaped groove by an anisotropic etching and a thermal diffusion; forming a base region in said active layer by an ion implantation and a thermal diffusion; forming an emitter region in said base region by an ion implantation and a thermal diffusion; forming a second insulator layer on said active layer; forming three contact holes in said second insulator layer at positions respectively corresponding to said base region, said emitter region and said diffusion layer; and forming a base electrode, an emitter electrode and a collector electrode at said three contact holes.
Claim 15
Dependent Claim
39 words
A method of producing a semiconductor device as claimed in claim 12, characterized in that said active layer is made of an n-type semiconductor, said base region is a p-type region, and said emitter region is an n-type region.
Claim 16
Dependent Claim
49 words
A method of producing a semiconductor device as claimed in claim 12, characterized in that said step of preparing said stacked structure includes a substep of forming a diffusion region in said active layer in a vicinity of the interface between said active layer and said first insulator layer.
Claim 17
Dependent Claim
39 words
A method of producing a semiconductor device as claimed in claim 14, characterized in that said active layer is made of an n-type semiconductor, said base region is a p-type region, and said emitter region is an n-type region.
Claim 18
Independent Claim
180 words
A method of producing a semiconductor device, said method comprising the steps of: preparing a stacked structure made up of a base substrate made of a conductor or a semiconductor, a first insulator layer formed on said base substrate and an active layer made of a semiconductor and formed on said first insulator layer; forming a U-shaped groove in said active layer to said first insulator layer by an etching; filling said U-shaped groove by an insulator to form an insulator region; forming a diffusion region in said active layer adjacent to said U-shaped groove by an anisotropic etching and a thermal diffusion; forming an emitter region in said active layer by an ion implantation and a thermal diffusion at a position where said active layer constitutes a base region; forming a second insulator layer on said active layer; forming three contact holes in said second insulator layer at positions respectively corresponding to said base region, said emitter region and said diffusion layer; and forming a base electrode, an emitter electrode and a collector electrode at said three contact holes.
Claim 19
Independent Claim
180 words
A method of producing a semiconductor device, said method comprising the steps of: preparing a stacked structure made up of a base substrate made of a conductor or a semiconductor, a first insulator layer formed on said base substrate and an active layer made of a semiconductor and formed on said first insulator layer; forming a U-shaped groove in said active layer to said first insulator layer by an etching; filling said U-shaped groove by an insulator to form an insulator region; forming a diffusion region in said active layer adjacent to said U-shaped groove by an anisotropic etching and a thermal diffusion; forming an emitter region in said active layer by an ion implantation and a thermal diffusion at a position where said active layer constitutes a base region; forming a second insulator layer on said active layer; forming three contact holes in said second insulator layer at positions respectively corresponding to said base region, said emitter region and said diffusion layer; and forming a base electrode, an emitter electrode and a collector electrode at said three contact holes.
Claim 20
Dependent Claim
39 words
A method of producing a semiconductor device as claimed in claim 16, characterized in that said active layer is made of a p-type semiconductor, said base region is a p-type region, and said emitter region is an n-type region.
References Cited (Backward Citations)
No citation records indexed.
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