Patent EP0308946A2 successfully refreshed from Google Patents.
EP0308946A2
Expired / Lapsed
EP
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Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
Assignee: NEC Corp
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Filing: 1988-09-22
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Granted: —
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Expires: 2008-09-22
Abstract
Abstract A chemical vapor deposition apparatus includes a reaction tube, a substrate-holder installed in the reaction tube (7), the substrate-holder (6) holding a plurality of substrates in a vertical direction, surfaces of the substrates being held horizontally, a rotating-means for rotating the substrate-holder, a heating-means (13) for heating the substrates, a first gas-supply nozzle tube (9) installed vertically in the reaction tube, the first gas-supply nozzle tube having a first vertical gas-emission line of a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube (8) installed vertically in the reaction tube, the second gas-supply nozzle tube having a second vertical gas-emission line, a plurality of second gas-emission holes (10) aligned in a vertical direction, a first gas-emitting-axis of the first gas-emission holes intersecting with a second gas-emitting-axis of the second gas-emission holes at a first intersection over the substrate, the first intersection of the first and second gas-emitting axes being deviated from the rotation center of the substrate-holder.
Inventors
- 👤 Seiichi c/o NEC Corporation Shishiguchi
- 👤 Fumitoshi c/o NEC Corporation Toyokawa
- 👤 Masao c/o NEC Corporation Mikami
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:07
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/12; C30B25/14; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
181 words
A chemical vapor deposition apparatus comprising: a reaction tube; a substrate-holder installed in said reaction tube, said substrate-holder stacking a plurality of substrates in a vertical direction with a space of a predetermined internal, surfaces of said substrates being held horizontally; a rotating-means for rotating said substrates stacked in said substrate-holder; a heating-means for heating said substrates; a first gas-supply nozzle tube installed vertically in said reaction tube, said first gas-supply nozzle tube having a first vertical gas-emission line, said first vertical gas-emission line having a plurality of first gas-emission holes aligned in a vertical direction; and a second gas-supply nozzle tube installed vertically in said reaction tube, said second gas-supply nozzle tube having a second vertical gas-emission line, said second vertical gas-emission line having a plurality of second gas-emission holes aligned in a vertical direction, a first gas-emitting-axis of said first gas-emission holes intersecting with a second gas-emitting-axis of said second gas-emission holes at a first intersection over said substrate, said first intersection of said first and second gas-emitting axes being deviated from a rotation center of said rotating substrates.
Claim 2
Dependent Claim
181 words
A chemical vapor deposition apparatus comprising: a reaction tube; a substrate-holder installed in said reaction tube, said substrate-holder stacking a plurality of substrates in a vertical direction with a space of a predetermined internal, surfaces of said substrates being held horizontally; a rotating-means for rotating said substrates stacked in said substrate-holder; a heating-means for heating said substrates; a first gas-supply nozzle tube installed vertically in said reaction tube, said first gas-supply nozzle tube having a first vertical gas-emission line, said first vertical gas-emission line having a plurality of first gas-emission holes aligned in a vertical direction; and a second gas-supply nozzle tube installed vertically in said reaction tube, said second gas-supply nozzle tube having a second vertical gas-emission line, said second vertical gas-emission line having a plurality of second gas-emission holes aligned in a vertical direction, a first gas-emitting-axis of said first gas-emission holes intersecting with a second gas-emitting-axis of said second gas-emission holes at a first intersection over said substrate, said first intersection of said first and second gas-emitting axes being deviated from a rotation center of said rotating substrates.
Claim 3
Dependent Claim
120 words
A chemical vapor deposition apparatus as claimed in claim 1, further comprising a third gas-supply nozzle tube installed vertically in said reaction tube, said third gas-supply nozzle tube having a third vertical gas-emission line, said third vertical gas-emission line having a plurality of third gas-emission holes aligned in a vertical direction, said first gas-emitting-axis intersecting with a third gas-emitting-axis of said third gas-emission holes at a second intersection over said substrate, said second intersection of said first and third gas-emitting axes being deviated from the rotation center of said rotating substrates, said second gas-emitting-axis intersecting with said third gas-emitting-axis at a third intersection over said substrate and said third intersection being deviated from the rotation center of said rotating substrates.
Claim 4
Dependent Claim
73 words
A chemical vapor deposition apparatus as claimed in claim 1, wherein said substrate is a round semiconductor wafer, said first intersection being positioned over a portion of said round semiconductor wafer, said portion being inside a semicircle of said round semiconductor wafer on said first and second gas-supply-nozzle-tube-side and outside a circle concentric with said round semi-conductor wafer, a radius of said concentric circle being 30% of that of said round semiconductor wafer.
Claim 5
Dependent Claim
77 words
A chemical vapor deposition apparatus as claimed in claim 2, where said substrate is a round semiconductor wafer, said first, second and third intersections being positioned over a portion of said round semiconductor wafer, said portion being inside a semicircle of said round semiconductor wafer on said first, second and third gas-supply-nozzle-tube-side and outside a circle concentric with said round semiconductor wafer, a radius of said concentric circle being 30% of that of said round semiconductor wafer.
Claim 6
Dependent Claim
72 words
A chemical vapor deposition apparatus as claimed in claim 1, said first gas-supply nozzle tube further comprising a fourth and fifth vertical gas-emission lines, said first vertical gas-emission line being located between said fourth and fifth vertical gas-emission lines, said fourth vertical gas-emission line having a plurality of fourth gas-emission holes in a vertical direction and said fifth vertical gas-emission line having a plurality of fifth gas-emission holes in a vertical direction.
Claim 7
Dependent Claim
43 words
A chemical vapor deposition apparatus as claimed in claim 1, wherein spacings between adjacent ones of said first gas-emission holes and spacings between adjacent ones of said second gas-emission holes are the same as said predetermined interval between adjacent ones of said substrates.
Claim 8
Dependent Claim
191 words
A chemical vapor deposition apparatus as claimed in claim 1, further comprising: a first branch gas-supply nozzle tube, the top end of said first branch gas-supply nozzle tube being connected to the top end of said first gas-supply nozzle tube and the bottom end of said first branch gas-supply nozzle tube being connected to the bottom end of said first gas-supply nozzle tube; a second branch gas-supply nozzle tube, the top end of said second branch gas-supply nozzle tube being connected to the top end of said second gas-supply nozzle tube and the bottom end of said second branch gas-supply nozzle tube being connected to the bottom end of said second gas-supply nozzle tube; a first gas-inlet nozzle tube, an end of said first gas-inlet nozzle tube being connected to both ones of the top and the bottom ends of said first gas-supply nozzle tube and said first branch gas-supply nozzle tube; and a second gas-inlet nozzle tube, an end of said second gas-inlet nozzle tube being connected to both ones of the top and the bottom ends of said second gas-supply nozzle tube and said second branch gas-supply nozzle tube.
Claim 9
Dependent Claim
103 words
A chemical vapor deposition apparatus comprising: a reaction tube; a substrate-holder installed in said reaction tube, said substrate-holder holding a plurality of substrates in a vertical direction with a spacing of a predetermined interval between adjacent ones of said substrates, surfaces of said substrates being held horizontally; a rotating-means for rotating said substrate-holder; a heating-means for heating said substrates; and a gas-supply nozzle tube installed vertically in said reaction tube, said gas-supply nozzle tube having a first and second vertical gas-emission lines, said first and second vertical gas-emission lines respectively having a plurality of first and second gas-emission holes in a vertical direction.
Claim 10
Dependent Claim
103 words
A chemical vapor deposition apparatus comprising: a reaction tube; a substrate-holder installed in said reaction tube, said substrate-holder holding a plurality of substrates in a vertical direction with a spacing of a predetermined interval between adjacent ones of said substrates, surfaces of said substrates being held horizontally; a rotating-means for rotating said substrate-holder; a heating-means for heating said substrates; and a gas-supply nozzle tube installed vertically in said reaction tube, said gas-supply nozzle tube having a first and second vertical gas-emission lines, said first and second vertical gas-emission lines respectively having a plurality of first and second gas-emission holes in a vertical direction.
Claim 11
Dependent Claim
154 words
A chemical vapor deposition apparatus comprising: a reaction tube; a substrate-holder installed in said reaction tube, said substrate-holdere holding a plurality of substrates with a spacing of a predetermined interval between adjacent ones of said substrates, surfaces of said substrates being held horizontally; a rotating-means for rotating said substrate-holder; a heating-means for heating said substrates; a gas-supply nozzle tube installed vertically in said reaction tube, said gas-supply nozzle tube having a vertical gas-emission line, said gas-emission line having a plurality of gas-emission holes aligned in a vertical direction; a branch gas-supply nozzle tube, the top end of said branch gas-supply nozzle tube being connected to the top end of said gas-supply nozzle tube and the bottom end of said branch gas-supply nozzle tube being connected to the bottom end of said gas-supply nozzle tube; and a gas-inlet nozzle tube, an end of said gas-inlet nozzle tube being connected to said branch gas-supply nozzle tube.
Claim 12
Dependent Claim
154 words
A chemical vapor deposition apparatus comprising: a reaction tube; a substrate-holder installed in said reaction tube, said substrate-holdere holding a plurality of substrates with a spacing of a predetermined interval between adjacent ones of said substrates, surfaces of said substrates being held horizontally; a rotating-means for rotating said substrate-holder; a heating-means for heating said substrates; a gas-supply nozzle tube installed vertically in said reaction tube, said gas-supply nozzle tube having a vertical gas-emission line, said gas-emission line having a plurality of gas-emission holes aligned in a vertical direction; a branch gas-supply nozzle tube, the top end of said branch gas-supply nozzle tube being connected to the top end of said gas-supply nozzle tube and the bottom end of said branch gas-supply nozzle tube being connected to the bottom end of said gas-supply nozzle tube; and a gas-inlet nozzle tube, an end of said gas-inlet nozzle tube being connected to said branch gas-supply nozzle tube.
Claim 13
Dependent Claim
111 words
A chemical vapor deposition apparatus comprising: a reaction tube; a substrate-holder installed in said reaction tube, said substrate-holder holding a plurality of substrates with a spacing of a predetermined interval between adjacent ones of said substrates, surfaces of said substrates being held horizontally; a rotating-means for rotating said substrate-holder; a heating-means for heating said substrates; a gas-supply nozzle tube installed vertically in said reaction tube, said gas-supply nozzle tube having a vertical gas-emission line, said vertical gas-emission line having a plurality of gas-emission holes aligned in a vertical direction; and a gas-inlet nozzle tube, an end of said gas-inlet nozzle tube being connected to the center of said gas-supply nozzle tube.
Claim 14
Dependent Claim
111 words
A chemical vapor deposition apparatus comprising: a reaction tube; a substrate-holder installed in said reaction tube, said substrate-holder holding a plurality of substrates with a spacing of a predetermined interval between adjacent ones of said substrates, surfaces of said substrates being held horizontally; a rotating-means for rotating said substrate-holder; a heating-means for heating said substrates; a gas-supply nozzle tube installed vertically in said reaction tube, said gas-supply nozzle tube having a vertical gas-emission line, said vertical gas-emission line having a plurality of gas-emission holes aligned in a vertical direction; and a gas-inlet nozzle tube, an end of said gas-inlet nozzle tube being connected to the center of said gas-supply nozzle tube.
Claim 15
Independent Claim
188 words
A method of epitaxial growth comprising: a first step of setting a plurality of substrates in a substrate-holder, said substrates being stacked in a vertical direction with a spacing of a predetermined interval, surfaces of said substrates being held horizontally, said substrate-holder being installed in a reaction tube installed in a chemical vapor deposition apparatus, said chemical vapor deposition apparatus comprising a rotating-means for rotating said substrate-holder, a heating-means for heating said substrates; a first gas-supply nozzle tube installed vertically in said reaction tube, said first gas-supply nozzle tube having a first vertical gas-emission line, said first vertical gas-emission line having a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube installed vertically in said reaction tube, said second gas-supply nozzle tube having a second vertical gas-emission line, said second vertical gas- emission line having a plurality of second gas-emission holes aligned in a vertical direction; and a second step of growing epitaxial layers on said substrates by introducing chlorosilane, a doping-gas and a rare gas through said first gas-supply nozzle tube and H₂ through said second gas-supply nozzle tube, respectively.
Claim 16
Independent Claim
188 words
A method of epitaxial growth comprising: a first step of setting a plurality of substrates in a substrate-holder, said substrates being stacked in a vertical direction with a spacing of a predetermined interval, surfaces of said substrates being held horizontally, said substrate-holder being installed in a reaction tube installed in a chemical vapor deposition apparatus, said chemical vapor deposition apparatus comprising a rotating-means for rotating said substrate-holder, a heating-means for heating said substrates; a first gas-supply nozzle tube installed vertically in said reaction tube, said first gas-supply nozzle tube having a first vertical gas-emission line, said first vertical gas-emission line having a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube installed vertically in said reaction tube, said second gas-supply nozzle tube having a second vertical gas-emission line, said second vertical gas- emission line having a plurality of second gas-emission holes aligned in a vertical direction; and a second step of growing epitaxial layers on said substrates by introducing chlorosilane, a doping-gas and a rare gas through said first gas-supply nozzle tube and H₂ through said second gas-supply nozzle tube, respectively.
References Cited (Backward Citations)
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