Patent EP0308266A2 successfully refreshed from Google Patents.
EP0308266A2
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EP
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Method and apparatus for forming superconducting materials
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1988-09-16
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Granted: —
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Expires: 2008-09-16
Abstract
Abstract A method and apparatus is disclosed for the formation of thin film superconducting oxide materials, for example materials of the general formula (A 1-x B x ) y Cu z O w , by deposition onto a substrate of the reaction products of a microwave excited plasma subjected additionally to a magnetic field and with the deposition being effected again under the action of magnetic and/or electric fields directed so as to obtain preferential crystal orientation and in some cases epitaxial crystal growth in the deposited film. By use of microwave excitation a hybrid resonance is established within the plasma leading to an abundance of excited oxygen within the plasma whereby the introduction of elemental constituents of the required superconducting oxide material, preferably in aerosol or spray form, can result in a plasma reaction wherein the superconducting material is the reaction product. If a spoiling agent is introduced additionally into the plasma in the first part of a two part process, a non-superconducting film of essentially the same crystal structure and crystal orientation as the required film can be deposited to form a surface for formation of the desired superconducting film.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 05:23
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0436; H10N60/0464; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/408; C23C16/44; C23C16/50; C23C16/511; H10N60/0576; H10N60/0661; H10N60/0716; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/727; Y10S505/734; Y10S505/737
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
123 words
A method of forming a superconducting oxide material, said method comprising: introducing oxygen or an oxidizing gas and a reactive gas or reactive minute particles into a plasma generating chamber; applying a magnetic field to the plasma generating chamber and supplying microwave energy to the plasma generating chamber, the direction of the magnetic field and the propagation direction of the microwave energy being parallel; the mutual reaction of the oxygen or the oxidizing gas and the reactive gas or reactive minute particles converting them to plasma; and forming the superconducting oxide material by deposition of the plasma reaction products on a film forming surface portion positioned in or adjacent to the plasma generating chamber and subjected to the application of a magnetic field.
Claim 2
Independent Claim
123 words
A method of forming a superconducting oxide material, said method comprising: introducing oxygen or an oxidizing gas and a reactive gas or reactive minute particles into a plasma generating chamber; applying a magnetic field to the plasma generating chamber and supplying microwave energy to the plasma generating chamber, the direction of the magnetic field and the propagation direction of the microwave energy being parallel; the mutual reaction of the oxygen or the oxidizing gas and the reactive gas or reactive minute particles converting them to plasma; and forming the superconducting oxide material by deposition of the plasma reaction products on a film forming surface portion positioned in or adjacent to the plasma generating chamber and subjected to the application of a magnetic field.
Claim 3
Dependent Claim
28 words
The method of claim 1, wherein the magnetic field for generating the plasma is applied in a direction perpendicular to or parallel to the film forming surface portion.
Claim 4
Dependent Claim
104 words
The method of Claim 1 or 2, wherein the superconducting material can be generally represented by the expression (A 1-x B x ) y Cu z O w , where X = 0.1 to 1, y = 2.0 to 4.0, z = 1.0 to 4.0, and w = 4.0 to 10.0; A is one or more elements of the group comprising Y (yttrium), Gd (gadolinium), Yb (ytterbium), Eu (europium), Tb (terbium), Dy (dysprosium), Ho (holmium), Er (erbium), Tm (thulium), Lu (lutetium), Sc (scandium), and other lanthanides; and B is one or more elements of the group comprising Ba (barium), Sr (strontium) and Ca (calcium).
Claim 5
Independent Claim
103 words
An apparatus for forming a superconducting oxide material, said apparatus comprising: a plasma generating chamber; means for generating a magnetic field within the plasma generating chamber; means for supplying microwave energy to the plasma generating chamber; means for supplying a reactive gas or reactive minute particles and oxygen or an oxidizing gas to the plasma generating chamber for forming a superconducting oxide material as a plasma reaction product; and means for forming the superconducting oxide material on a film-forming surface portion provided in the plasma generating chamber or in a region adjacent thereto, while applying a magnetic field or an electrical field thereto.
Claim 6
Independent Claim
103 words
An apparatus for forming a superconducting oxide material, said apparatus comprising: a plasma generating chamber; means for generating a magnetic field within the plasma generating chamber; means for supplying microwave energy to the plasma generating chamber; means for supplying a reactive gas or reactive minute particles and oxygen or an oxidizing gas to the plasma generating chamber for forming a superconducting oxide material as a plasma reaction product; and means for forming the superconducting oxide material on a film-forming surface portion provided in the plasma generating chamber or in a region adjacent thereto, while applying a magnetic field or an electrical field thereto.
Claim 7
Dependent Claim
24 words
The apparatus of claim 4, wherein a means is provided for positioning the film-forming surface portion in a region with a stronger magnetic field.
Claim 8
Dependent Claim
104 words
The apparatus of claim 4 or 5, wherein the superconducting material can be generally represented by the expression (A 1-x B x ) y Cu z O w , where x = 0.1 to 1, y = 2.0 to 4.0, z = 1.0 to 4.0, and w = 4.0 to 10.0; A is one or more elements of the group comprising Y (yttrium), Gd (gadolinium), Yb (ytterbium), Eu (europium), Tb (terium), Dy (dysprosium) Ho (holmium), Er (erbium), Tm (thulium), Lu (lutetium), Sc (scandium) and other lanthanides; and B is one or more elements of the group comprising Ba (barium), Sr (strontium) and Ca (calcium).
Claim 9
Independent Claim
93 words
A method of forming a superconducting oxide material comprising: applying a magnetic field to the inside of a reaction chamber; propagating microwave energy into the reaction chamber in substantially the same direction as the magnetic field; generating a microwave excitation reaction wherein a superconducting material is formed in a resonance space by means of the resonance of the microwaves with a reactive gas or reactive minute particles in the magnetic field; and growing crystals of the superconducting oxide material with the atomic arrangement of the crystals regulated by means of the magnetic field.
Claim 10
Independent Claim
93 words
A method of forming a superconducting oxide material comprising: applying a magnetic field to the inside of a reaction chamber; propagating microwave energy into the reaction chamber in substantially the same direction as the magnetic field; generating a microwave excitation reaction wherein a superconducting material is formed in a resonance space by means of the resonance of the microwaves with a reactive gas or reactive minute particles in the magnetic field; and growing crystals of the superconducting oxide material with the atomic arrangement of the crystals regulated by means of the magnetic field.
Claim 11
Dependent Claim
12 words
The method of claim 7 wherein the resonance is a hybrid resonance.
Claim 12
Dependent Claim
26 words
The method of claim 7 or 8, wherein the crystal growth is carried out on a surface positioned substantially at right angles to the magnetic field.
Claim 13
Independent Claim
223 words
A method of forming a superconducting oxide material wherein first a film with non-superconducting characteristics is formed from the same main constituents as the superconducting oxide material, said method comprising: the introduction into a plasma generating chamber of oxygen or an oxidizing gas and a reactive gas or reactive minute particles for forming a superconducting oxide material; the introduction into the plasma generating chamber of a reactive gas or reactive minute particles as an additive for destroying the superconducting characteristics of the superconducting oxide material; the application of a magnetic field to the plasma generating chamber; the supplying of microwave energy to the plasma generating chamber; the mutual reaction of the oxygen or oxidizing gas and reactive gas or reactive minute particles, and of the additive reactive gas or additive reactive minute particles converting them to a plasma; the formation of a film having non-superconducting characteristics on a film-forming surface portion positioned in or adjacent to the plasma generating chamber and subject to the application of a magnetic field, the non-superconducting film having the same major constituents as the required superconducting oxide material and further including the additive for destroying the superconducting characteristics; and the formation of a superconducting oxide material contiguous to the non-superconducting film by repetition of the above-mentioned process with the omission of the additive for destroying the superconducting characteristics.
Claim 14
Independent Claim
223 words
A method of forming a superconducting oxide material wherein first a film with non-superconducting characteristics is formed from the same main constituents as the superconducting oxide material, said method comprising: the introduction into a plasma generating chamber of oxygen or an oxidizing gas and a reactive gas or reactive minute particles for forming a superconducting oxide material; the introduction into the plasma generating chamber of a reactive gas or reactive minute particles as an additive for destroying the superconducting characteristics of the superconducting oxide material; the application of a magnetic field to the plasma generating chamber; the supplying of microwave energy to the plasma generating chamber; the mutual reaction of the oxygen or oxidizing gas and reactive gas or reactive minute particles, and of the additive reactive gas or additive reactive minute particles converting them to a plasma; the formation of a film having non-superconducting characteristics on a film-forming surface portion positioned in or adjacent to the plasma generating chamber and subject to the application of a magnetic field, the non-superconducting film having the same major constituents as the required superconducting oxide material and further including the additive for destroying the superconducting characteristics; and the formation of a superconducting oxide material contiguous to the non-superconducting film by repetition of the above-mentioned process with the omission of the additive for destroying the superconducting characteristics.
Claim 15
Dependent Claim
104 words
The method of claim 10, wherein the superconducting material can be generally represented by the expression (A 1-x B x ) y Cu z O w , where x = 0.1 to 1, y = 2.0 to 4.0, z = 1.0 to 4.0, and w = 4.0 to 10.0; A is one or more elements selected from the group comprising Y (yttrium), Gd (gadolinium), Yb (ytterbium), Eu (europium), Tb (terbium), Dy (dysprosium), Ho (holmium), Er (erbium), Tm (thulium), Lu (lutetium), Sc (scandium) and other lanthanides; and B is one or more elements selected from the group comprising Ba (barium), Sr (strontium) and Ca (calcium).
Claim 16
Dependent Claim
49 words
The method of claim 10 or 11, wherein the additive is selected from the group of elements comprising copper (Cu), the rare earth elements, iron (Fe), nickel (Ni), cobalt (Co), silicon (Si), germanium (Ge), boron (B), aluminium (Al), gallium (Ga), phosphorus (P), titanium (Ti), tantalum (Ta), and magnesium (Mg).
Claim 17
Dependent Claim
65 words
The method of claim 10 or 11 or 12, wherein the film is formed without the introduction of a reactive gas or reactive minute particles which act as an additive, in order to cause a film with crystal axes of uniform orientation and with the same crystal structure as the superconducting oxide material to form on the top or bottom side of the non-superconducting film.
Claim 18
Independent Claim
38 words
A method of forming a superconducting film, said method comprising forming a non-superconducting film of substantially the same crystalline structure as the required superconducting film, and then forming the superconducting film on the surface of the non-superconducting film.
Claim 19
Independent Claim
38 words
A method of forming a superconducting film, said method comprising forming a non-superconducting film of substantially the same crystalline structure as the required superconducting film, and then forming the superconducting film on the surface of the non-superconducting film.
Claim 20
Independent Claim
47 words
A method of forming a superconducting film by deposition of plasma reaction products upon a film-forming surface, said method including introducing an additive into the plasma so as to spoil the superconducting properties of the deposited film, and thereafter depositing a superconducting film formed without the additive.
Claim 21
Independent Claim
47 words
A method of forming a superconducting film by deposition of plasma reaction products upon a film-forming surface, said method including introducing an additive into the plasma so as to spoil the superconducting properties of the deposited film, and thereafter depositing a superconducting film formed without the additive.
Claim 22
Independent Claim
50 words
A method of forming a thin film superconducting material, said method comprising reacting reactive gases and/or reactive minute particles in a plasma, and depositing plasma reaction products upon a surface subject to a magnetic and/or electric field so as to obtain a preferred crystal orientation during formation of the film.
Claim 23
Independent Claim
50 words
A method of forming a thin film superconducting material, said method comprising reacting reactive gases and/or reactive minute particles in a plasma, and depositing plasma reaction products upon a surface subject to a magnetic and/or electric field so as to obtain a preferred crystal orientation during formation of the film.
Claim 24
Dependent Claim
25 words
A method according to claim 16 wherein the plasma is generated under the influence of a magnetic field and with the injection of microwave energy.
Claim 25
Dependent Claim
54 words
A method according to claim 16 or 17, wherein the materials for constituting the superconducting material are introduced into the plasma in the form of an aerosol or spray comprising organic compounds of the constituent elements of the superconducting material, or comprising salts of the constituent elements, or comprising finely divided preformed superconducting material.
Claim 26
Independent Claim
45 words
A method of formation of a thin superconducting oxide film by deposition of plasma reaction products upon a surface which is subjected to a magnetic field in a predetermined direction and to a microwave electric field in a direction orthogonal to the magnetic field direction.
Claim 27
Independent Claim
45 words
A method of formation of a thin superconducting oxide film by deposition of plasma reaction products upon a surface which is subjected to a magnetic field in a predetermined direction and to a microwave electric field in a direction orthogonal to the magnetic field direction.
Claim 28
Independent Claim
70 words
A method of manufacturing a superconducting thin film material which comprises the deposition of a polycrystalline material by a CVD process and further includes thermal treatment of the deposited material under the application of a magnetic and/or electric field and within an atmosphere comprising the superconducting material in a dissociated form so as to encourage substantially unidirectional crystal growth in the polycrystalline material whereby a quasi-single-crystal structure may be obtained.
Claim 29
Independent Claim
70 words
A method of manufacturing a superconducting thin film material which comprises the deposition of a polycrystalline material by a CVD process and further includes thermal treatment of the deposited material under the application of a magnetic and/or electric field and within an atmosphere comprising the superconducting material in a dissociated form so as to encourage substantially unidirectional crystal growth in the polycrystalline material whereby a quasi-single-crystal structure may be obtained.
Claim 30
Independent Claim
119 words
An apparatus for manufacturing a superconducting material comprising a plasma generation chamber, means for developing a magnetic field within the chamber and for propagating microwave energy within the chamber so as to develop a hybrid resonance within the plasma chamber, means for introducing reaction gases and basic reaction products into said chamber for the development of a plasma reaction within the chamber and the formation of reaction products such as when deposited upon a substrate to form a superconducting layer, a substrate holder within said chamber in or adjacent to the plasma generation region, and means for applying a magnetic and/or electric field to the deposition region of the substrate for developing a preferential orientation in the deposited material.
Claim 31
Independent Claim
119 words
An apparatus for manufacturing a superconducting material comprising a plasma generation chamber, means for developing a magnetic field within the chamber and for propagating microwave energy within the chamber so as to develop a hybrid resonance within the plasma chamber, means for introducing reaction gases and basic reaction products into said chamber for the development of a plasma reaction within the chamber and the formation of reaction products such as when deposited upon a substrate to form a superconducting layer, a substrate holder within said chamber in or adjacent to the plasma generation region, and means for applying a magnetic and/or electric field to the deposition region of the substrate for developing a preferential orientation in the deposited material.
References Cited (Backward Citations)
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