EP0307850A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Si/SiGe semiconductor body
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1988-09-13
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Granted: —
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Expires: 2008-09-13
Abstract
Abstract An n-p-n heterobipolar transistor (HBT) has a base layer (3a) composed of SiGe and emitter layer (4a) and collector layer (2a) composed of Si. In such Si/SiGe HBTs, the hole injection into the emitter region is reduced and the emitter efficiency is consequently improved. To increase the current driver characteristics, the HBT according to the invention is combined with an Si/SiGe MODFET (modulation-doped field effect transistor). HBT and MODFET are produced from the same semiconductor layer sequence. <IMAGE>
Inventors
- 👤 Heinrich Dämbkes
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 22:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D10/00; H10D10/80; H10D10/821; H10D10/891; H10D84/00; H10D84/40; H10D84/401
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References Cited (Backward Citations)
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