EP0228516A2
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EP
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Modulation-doped field-effect transistor
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1986-10-14
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Granted: —
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Expires: 2006-10-14
Abstract
Abstract Translated from German Die Erfindung betrifft einen modulationsdotierten Feldeffekttransistor (MODFET), der einen n-leitenden Kanal besitzt. Dieser wird durch eine Heterostruktur erzeugt aus einer modulationsdotierten Si1-xGex-Schicht sowie einer undotierten Si-Schicht. The invention relates to a modulation-doped field effect transistor (MODFET), which has an n-conducting channel. This is generated by a heterostructure consisting of a modulation-doped Si1-xGex layer and an undoped Si layer.
Inventors
- 👤 Heinrich Dr.-Ing. Dämbkes
- 👤 Hans J. Dipl.-Phys. Herzog
- 👤 Helmut Dipl.-Phys. Jorke
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 18:05
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D62/00; H10D62/60; H10D62/605; H10D62/80; H10D62/82; H10D62/822; H10D64/00; H10D64/60; H10D64/64
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