Patent EP0301826A2 successfully refreshed from Google Patents.
EP0301826A2
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A semiconductor laser of a refractive index-guided type and a process for fabricating the same
Assignee: NEC Corp
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Filing: 1988-07-27
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Granted: —
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Expires: 2008-07-27
Abstract
Abstract A semiconductor laser of a refractive index-guided type comprises a GaAs (100) substrate (46) having a mesa of (011) orientation thereon, a buffer layer (49) grown on the top surface and side walls of the mesa of the GaAs (100) substrate and having a mesa on the top surface, a first cladding layer (42) grown on the buffer layer in compliance with the outline on the top surface of the buffer layer having the mesa so that a mesa is provided, an active layer (41) grown on the first cladding layer and interrupted on the side walls of the mesa of the first cladding layer (42), and a second cladding layer (43) grown on the active layer (41), a boundary surface of the second cladding layer being in contact through the interrupted portion of the active layer with a boundary surface of the first cladding layer (42). The first and second cladding layer (42, 43) are of AlGaInP or AlInP, and of a forbidden energy bandgap larger than that of the active layer (41). The semiconductor laser as described above is fabricated by a single etching process and a single and common metalorganic vapour phase epitaxy.
Inventors
- 👤 Hiroaki Fujii
- 👤 Kenichi Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 18:59
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
170 words
A semiconducter laser of a refractive index-guided type comprising, a GaAs (100) substrate having a mesa of (011) orientation thereon, a buffer layer grown on the top surface and side walls of said mesa of GaAs (100) substrate, said buffer layer having a mesa on said top surface, a first cladding layer grown on said buffer layer in compliance with the outline on the top surface of said buffer layer having said mesa thereby having a mesa, an active layer grown on said first cladding layer, said active layer being separated on side walls of said mesa of said first cladding layer, and a second cladding layer grown on said active layer, a boundary surface of said second cladding layer being in contact through a separated portion of said active layer with a boundary surface of said first cladding layer, wherein said first and second cladding layers are of a semiconductor material selected from AlGaInP and AlInP, and of a forbidden energy bandgap larger than that of said active layer.
Claim 2
Dependent Claim
170 words
A semiconducter laser of a refractive index-guided type comprising, a GaAs (100) substrate having a mesa of (011) orientation thereon, a buffer layer grown on the top surface and side walls of said mesa of GaAs (100) substrate, said buffer layer having a mesa on said top surface, a first cladding layer grown on said buffer layer in compliance with the outline on the top surface of said buffer layer having said mesa thereby having a mesa, an active layer grown on said first cladding layer, said active layer being separated on side walls of said mesa of said first cladding layer, and a second cladding layer grown on said active layer, a boundary surface of said second cladding layer being in contact through a separated portion of said active layer with a boundary surface of said first cladding layer, wherein said first and second cladding layers are of a semiconductor material selected from AlGaInP and AlInP, and of a forbidden energy bandgap larger than that of said active layer.
Claim 3
Dependent Claim
28 words
A semiconductor laser of a refractive index-guided type according to claim 1, wherein a metal is diffused into said second cladding layer to provide a current injecting region.
Claim 4
Dependent Claim
203 words
A process for fabricating a semiconductor laser of a refractive index-guided type comprising steps of, etching a GaAs (100) substrate to provide a mesa of (011) orientation, growing a buffer layer of GaAs on said substrate provided with said mesa to provide a mesa thereon by a metalorganic vapour phase epitaxy, growing a first cladding layer of a semiconductor material selected from AlGaInP and AlInP on said buffer layer provided with said mesa in compliance with the outline on the upper surface of said buffer layer by the metalorgnic vapour phase epitaxy, growing an active layer of GaInP having a forbidden energy bandgap less than that of said first cladding layer on said first cladding layer by the metalorgnic vapour phase epitaxy, said active layer being separated on side walls of a mesa of said first cladding layer, and growing a second cladding layer of a semiconductor material selected from AlGaInP and AlInP having a forbidden energy bandgap larger than that of said active layer on said active layer by the metalorganic vapour phase epitaxy, a boundary surface of said second cladding layer being in contact through a separated portion of said active layer with a boundary surface of said first cladding layer.
Claim 5
Dependent Claim
203 words
A process for fabricating a semiconductor laser of a refractive index-guided type comprising steps of, etching a GaAs (100) substrate to provide a mesa of (011) orientation, growing a buffer layer of GaAs on said substrate provided with said mesa to provide a mesa thereon by a metalorganic vapour phase epitaxy, growing a first cladding layer of a semiconductor material selected from AlGaInP and AlInP on said buffer layer provided with said mesa in compliance with the outline on the upper surface of said buffer layer by the metalorgnic vapour phase epitaxy, growing an active layer of GaInP having a forbidden energy bandgap less than that of said first cladding layer on said first cladding layer by the metalorgnic vapour phase epitaxy, said active layer being separated on side walls of a mesa of said first cladding layer, and growing a second cladding layer of a semiconductor material selected from AlGaInP and AlInP having a forbidden energy bandgap larger than that of said active layer on said active layer by the metalorganic vapour phase epitaxy, a boundary surface of said second cladding layer being in contact through a separated portion of said active layer with a boundary surface of said first cladding layer.
References Cited (Backward Citations)
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