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Patent EP0300790A2 successfully refreshed from Google Patents.
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EP0300790A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor laser

Assignee: KDDI Corp
•
Filing: 1988-07-21
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Granted: —
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Expires: 2008-07-21
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Abstract

Abstract A semiconductor laser in which a light emitting region (A) having a light emitting layer (3,4) and a waveguide region (B,C) having a waveguide layer (6,7) which is coupled to at least one side of the light emitting layer with a high efficiency, are integrated on the same substrate. The light emitting region includes an active filter section (A₂) having a diffraction grating (5) equipped with a band-pass filter function. The light emitting region and the waveguide region are electrically isolated (14,15,16) and are each provided with an electrode (10,11,12,13). The oscillation wavelength of the semiconductor laser is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength, oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.

Inventors

  • 👤 Katsuyuki Utaka
  • 👤 Kazuo Sakai
  • 👤 Yuichi Matsushima

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 21:51
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06258; H01S5/10; H01S5/12; H01S5/1025; H01S5/14; Y; Y10; Y10S; Y10S372/00; Y10S372/704

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 162 words
A semiconductor laser comprising: a substrate; a light emitting region (A) having a light emitting layer (3,4) and integrated on the substrate; a waveguide region (B,C) having a waveguide layer (6,7) coupled to but electrically isolated from at least one side of the light emitting layer with a high efficiency and integrated on the substrate; an active filter (A₂) having a diffraction grating (5,17) of a band-pass filter function and provided in the light emitting region (A); electrodes (10,11,12,13) separated from one another for individually energizing the light emitting region and the waveguide region, so that the oscillation wavelength of the semiconductor laser is changed by changing the refractive indices of at least the waveguide region and the active region through said energizing, thereby producing a narrow-linewidth, single-wavelength oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the present refractive indices of the waveguide region (B,C) and the active filter section (A₂).
Claim 2
Dependent Claim 162 words
A semiconductor laser comprising: a substrate; a light emitting region (A) having a light emitting layer (3,4) and integrated on the substrate; a waveguide region (B,C) having a waveguide layer (6,7) coupled to but electrically isolated from at least one side of the light emitting layer with a high efficiency and integrated on the substrate; an active filter (A₂) having a diffraction grating (5,17) of a band-pass filter function and provided in the light emitting region (A); electrodes (10,11,12,13) separated from one another for individually energizing the light emitting region and the waveguide region, so that the oscillation wavelength of the semiconductor laser is changed by changing the refractive indices of at least the waveguide region and the active region through said energizing, thereby producing a narrow-linewidth, single-wavelength oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the present refractive indices of the waveguide region (B,C) and the active filter section (A₂).
Claim 3
Dependent Claim 18 words
A semiconductor laser according to claim 1, in which said diffraction grating is a λ/4 diffraction grating (5).
Claim 4
Dependent Claim 18 words
A semiconductor laser according to claim 1, in which said diffraction grating is a uniform diffraction grating (17).

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