Semiconductor laser

Abstract

Abstract A semiconductor laser in which a light emitting region (A) having a light emitting layer (3,4) and a waveguide region (B,C) having a waveguide layer (6,7) which is coupled to at least one side of the light emitting layer with a high efficiency, are integrated on the same substrate. The light emitting region includes an active filter section (A₂) having a diffraction grating (5) equipped with a band-pass filter function. The light emitting region and the waveguide region are electrically isolated (14,15,16) and are each provided with an electrode (10,11,12,13). The oscillation wavelength of the semiconductor laser is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength, oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.

Inventors

• 👤 Katsuyuki Utaka
• 👤 Kazuo Sakai
• 👤 Yuichi Matsushima

Bibliographic Details