Patent EP0300720A1 successfully refreshed from Google Patents.
EP0300720A1
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Multilevel interconnect transfer process
Assignee: Motorola Solutions Inc
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Filing: 1988-07-18
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Granted: —
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Expires: 2008-07-18
Abstract
Abstract A method for processing multilevel interconnect lines (34) separately from the multichip module (10) on which they are to be employed. An oxide layer (16) is grown on a silicon wafer (14) and followed by a polyimide layer (18). Then a metal layer (20) is deposited and patterned. This is followed by another polyimide layer (24) having vias (26) and another patterned metal layer (28). The vias (26) allow for connections to be made between metal layers. Many polyimides and metal layers may be processed to allow for the desired number of levels of interconnect lines. After a last polyimide layer (32) is deposited, the oxide layer (16) is etched to separate the multilevel interconnect line transfer (34) from the silicon wafer (14). After the processing of the multilevel interconnect lines (34), the multilevel interconnect line transfer (34) is adhered to the multichip module (10) in a predetermined relationship and electrical connections (19) are made between them.
Inventors
- 👤 Thomas Edwin Wood
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 19:55
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10W20/40; H10W70/00; H10W70/60; H10W70/611; H10W70/614; H10P72/7424; Y; Y10; Y10S; Y10S148/00; Y10S148/135
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
108 words
A method of processing multilevel interconnect lines (34) on a substrate (14) and transferring them to a module (10) having a plurality of electrical contacts (19) incorporated therein, the invention being characterized in the following steps: forming a separation layer (16) on said substrate (14); forming multilevel interconnect lines (34) on said separation layer (16); separating, at least partially, said substrate (14) and said multilevel interconnect lines (34); adhering said multilevel interconnect lines (34) and a module (10) having a plurality of electrical contacts (19) in a predetermined relationship; and electrically connecting said multilevel interconnect lines (34) and said plurality of electrical contacts (19) of said module (10).
Claim 2
Independent Claim
108 words
A method of processing multilevel interconnect lines (34) on a substrate (14) and transferring them to a module (10) having a plurality of electrical contacts (19) incorporated therein, the invention being characterized in the following steps: forming a separation layer (16) on said substrate (14); forming multilevel interconnect lines (34) on said separation layer (16); separating, at least partially, said substrate (14) and said multilevel interconnect lines (34); adhering said multilevel interconnect lines (34) and a module (10) having a plurality of electrical contacts (19) in a predetermined relationship; and electrically connecting said multilevel interconnect lines (34) and said plurality of electrical contacts (19) of said module (10).
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein the step of separating includes completely separating the substrate (14) and the multilevel interconnect lines (34).
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the separation layer (16) is comprised of a thermal oxide.
Claim 5
Independent Claim
16 words
The method of clam 3 wherein the step of separating includes etching the separation layer (16).
Claim 6
Independent Claim
16 words
The method of clam 3 wherein the step of separating includes etching the separation layer (16).
Claim 7
Dependent Claim
58 words
The method of claim 3 further including the steps of: adhering stabilizing means (44) to the multilevel interconnect lines (34) after said multilevel interconnect lines (34) have been partially separated from the substrate (14); etching the separation layer (16) further to completely separate said multilevel interconnect lines (34) from said substrate (14); and removing said stabilizing means (44).
Claim 8
Dependent Claim
154 words
The method of claim 1 wherein the forming multilevel interconnect lines (34) step further includes the steps of: forming a first polymer layer (18) on the separation layer (16) of the substrate (14); forming a first conductor layer (20) on said first polymer layer (18); patterning a first resist layer (22) on said first conductor layer (20); etching said first conductor layer (20) using said first resist layer (22) as an etch mask; removing said first resist layer (22); forming a second polymer layer (24), said second polymer layer (24) having vias (26) which extend to said first conductor layer (20); forming a second conductor layer (28) on said second polymer layer (24); patterning a second resist layer (30) on said second conductor layer (28); etching said second conductor layer (28) using said second resist layer (30) as an etch mask; removing said second resist layer (30); and forming a last polymer layer (32).
Claim 9
Dependent Claim
45 words
The method of claim 6 wherein the steps of forming a second polymer layer (24), forming a second conductor layer (28), patterning a second resist layer (30), etching said second conductor layer (28) and removing said second resist layer (30) are performed more than once.
Claim 10
Dependent Claim
23 words
The method of claim 4 wherein the step of separating includes employing an etchant consisting essentially of HCl, HF, HNO₃ and distilled H₂O.
Claim 11
Independent Claim
25 words
The method of clam 8 wherein the etchant consists essentially of 75 parts HCl, 50 parts HF, 125 parts HNO₃ and 305 parts distilled H₂O.
Claim 12
Independent Claim
25 words
The method of clam 8 wherein the etchant consists essentially of 75 parts HCl, 50 parts HF, 125 parts HNO₃ and 305 parts distilled H₂O.
References Cited (Backward Citations)
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