EP0299245A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Processing apparatus and method
Assignee: Texas Instruments Inc
•
Filing: 1988-06-23
•
Granted: —
•
Expires: 2008-06-23
Abstract
Abstract A process for deposition of silicon nitride which utilizes the combination of remote(1326) and in situ plasma (1312,1314) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, N₂ or NH₃, and SiH₄ or SiH₂Cl₂.
Inventors
- 👤 Lee M. Loewenstein
- 👤 Dean W. Freeman
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 09:11
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/50; C23C16/517; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C23C16/482
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
50 words
A process for deposition of a silicon nitride film onto a workpiece comprising the steps of: (a) generating free radicals from a nitrogen containing gas in a plasma generator remote from a process chamber; and (b) introducing said free radicals into said chamber and to a face of said workpiece.
Claim 2
Dependent Claim
50 words
A process for deposition of a silicon nitride film onto a workpiece comprising the steps of: (a) generating free radicals from a nitrogen containing gas in a plasma generator remote from a process chamber; and (b) introducing said free radicals into said chamber and to a face of said workpiece.
Claim 3
Dependent Claim
24 words
The process as set forth in claim 1 wherein said nitrogen containing gas in one taken from the group consisting of N₂ and NH₃.
Claim 4
Dependent Claim
18 words
The process as set forth in claim 1 wherein said remote and in situ plasmas are generated simultaneously.
Claim 5
Dependent Claim
17 words
The process as set forth in claim 1 wherein the process is carried out at ambient temperature.
Claim 6
Dependent Claim
17 words
The process as set forth in claim 1 wherein the process is arried out at 1 Torr.
Claim 7
Dependent Claim
40 words
The process as set forth in claim 1 wherein a mixture for the in situ and remote plasmas has a flow comprised of Helium at 1000 sccm, N₂ or NH₃ at 100 sccm, and SiH₄ or SiH₂Cl₂ at 50 sccm.
Claim 8
Dependent Claim
40 words
The process as set forth in claim 1 wherein a power utilized for generating the free radicals is 400 watts at a frequency of 2450 MHz and the in situ plasma is 100 watts at a frequency of 13.56 MHz.
Claim 9
Dependent Claim
36 words
The process as set forth in claim 1 wherein said ultraviolet energy is generated using an ultraviolet energy source within said process chamber wherein said ultraviolet energy source is in fluid communication with said process chamber.
Claim 10
Dependent Claim
23 words
The process as set forth in claim 1 wherein said ultraviolet energy is generated using an ultraviolet energy source outside said process chamber.
Claim 11
Dependent Claim
27 words
The process as set forth in claim 1 further including generating an in situ plasma within said chamber from said free radicals and a silicon containing gas.
References Cited (Backward Citations)
WO1981000862A1
Cited
EP0198361A2
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.