Patent EP0296754A2 successfully refreshed from Google Patents.
EP0296754A2
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EP
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Method of manufacturing a semiconductor device having a trench isolation region,
Assignee: Toshiba Corp
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Filing: 1988-06-15
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Granted: —
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Expires: 2008-06-15
Abstract
Abstract The present invention provides a method of manufacturing a semiconductor having a trench region (25, 55). After an etching process for forming a trench region (25, 55) in a substrate (23, 53), the corners of the trench region are covered with a polycrystalline layer (27, 57). The structure is subjected to an oxidation treatment. As the polycrystalline layer covers the corners roundly, the corners are oxidized roundly. As a result, semiconductor islands (302, 502) having rounded corners are achieved.
Inventors
- 👤 Kouichi C/O Patent Division Takahashi
- 👤 Hiroshi C/O Patent Division Kinoshita
- 👤 Naoto C/O Patent Division Miyashita
- 👤 Hironori C/O Patent Division Sonobe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 20:43
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/014; H10W10/041; H10W10/061; H10W10/10; H10W10/13; H10W10/17; H10W10/181; H10W10/40; H10P90/1914
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
112 words
A method of manufacturing a semiconductor device having a trench isolation (302, 502) region, characterised by comprising the steps of : preparing a semiconductor substrate (24, 54) having a first surface: forming a trench region (25, 55) in the first surface of the substrate (24, 54) having corners at the intersections of the trench region (25, 55) with the first surface: forming a first polycrystalline layer (27, 57) over the first surface covering the corners of, and only partially filling the trench region (25, 55): and oxidizing the first polycrystalline layer (27, 57) thereby rounding the corners of the trench region (25, 55) and only partially filling the trench region (25, 55).
Claim 2
Independent Claim
112 words
A method of manufacturing a semiconductor device having a trench isolation (302, 502) region, characterised by comprising the steps of : preparing a semiconductor substrate (24, 54) having a first surface: forming a trench region (25, 55) in the first surface of the substrate (24, 54) having corners at the intersections of the trench region (25, 55) with the first surface: forming a first polycrystalline layer (27, 57) over the first surface covering the corners of, and only partially filling the trench region (25, 55): and oxidizing the first polycrystalline layer (27, 57) thereby rounding the corners of the trench region (25, 55) and only partially filling the trench region (25, 55).
Claim 3
Dependent Claim
29 words
A method as claimed in claim 1, characterized by comprising the additional step of forming a second insulating layer (56) before the formation of the first polycrystalline layer (57).
Claim 4
Dependent Claim
52 words
A method as claimed in claim 1, characterised by comprising the additional steps of: removing the oxidized layer (28); forming a second insulating layer (29) to fill partially the trench region (25); and forming a second polycrystalline layer (30) over the second insulation layer (29) to fill the trench region (25) completely.
Claim 5
Dependent Claim
62 words
A method as claimed in claim 1 or claim 2, characterised in that the step of preparing the substrate comprises the steps of: preparing a first semiconductor substrate (51) having a surface; forming an intermediate insulating layer (52) on the surface of the first substrate (51); forming a second semiconductor substrate (53) having a predetermined thickness on the intermediate insulating layer (52).
Claim 6
Independent Claim
30 words
A method as claimed in any preceding claim, characterised in that the step of forming the first polycrystalline layer (27, 57) includes the step of low pressure chemical vapor deposition.
Claim 7
Independent Claim
26 words
A method as claimed in any preceding claim, characterised in that the step of forming the trench region (25, 55) includes the step of anisotropic etching.
Claim 8
Dependent Claim
13 words
A semiconductor device manufactured in accordance with the method of any preceding claim.
References Cited (Backward Citations)
No citation records indexed.
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