Ultraviolet photodetector and production method

Abstract

Abstract A photodetector having a semiconductor structure in a substrate (1) is particularly sensitive to light in the ultraviolet and blue region. It indicates in a detector volume the radiation (5) penetrating through an entry window (2), the depth of which volume is limited corresponding to the penetration depth of the shorter wave radiation (5) to between 50 nm to 300 nm by a potential threshold of at least 0.1 eV. During the manufacture of the photodetector a difference in the concentrations of the foreign atoms in the layer (8) behind the entry window (2), which difference is brought about by selective diffusion or by selective implantation of ions, generates the potential threshold which is decisive for the spectral sensitivity of the photodetector. Charge carriers generated by the longer wave radiation (5) in the substrate (1) are separated off by the potential threshold from the detector volume and recombine in the substrate (1). The entry window (2) can be constructed as an antireflection layer (24) or an interference filter. <IMAGE>

Inventors

• 👤 Popovic Radivoje

Bibliographic Details