Integrated high voltage generating system

Claim 2

An integrated high voltage generating system comprising: a charge pump composed of plural unit circuits having one end of a capacitor connected to the input end of a diode element, wherein said plural unit circuits are uniformly arranged in the polarity of said each diode element, and the output end of said diode element of the preceding stage is sequentially connected to the input end of said diode element of the succeeding stage, clock signals of mutually reverse phases are applied to the other end of said each capacitor of said adjacent unit circuits, and the electric charge stored in said capacitor of the preceding stage is sequentially transferred to said capacitor of the succeeding stage, thereby raising the voltage step by step; a power supply input terminal connected to the input end of said diode element of unit circuit at the first stage of said charge pump; a first power supply output terminals connected to the output end of said diode element of the unit circuit at the final stage of said charge pump; a second power supply output terminal; and a first MOS transistor having the source and drain electrodes connected between said first and second power supply output terminals, with the gate electrode connected at the input end of any one of said unit circuits of said charge pump, wherein the voltage of said first power supply output terminal is stepped down according to the voltage applied to said gate electrode, and is delivered to said second power supply output terminal.

Claim 3

An integrated high voltage generating system according to claim 1, further comprising: a diode element connected between the input end of any one of said unit circuits of said charge pump and the gate electrode of said first MOS transistor.

Claim 4

An integrated high voltage generating system according to claim 2, further comprising: a smoothing capacitor connected between said gate electrode of said first MOS transistor and the reference potential point.

Claim 5

An integrated high voltage generating system according to claim 1, further comprising: a second MOS transistor having drain and source electrodes connected between the input end of any one of said unit circuits of said charge pump and said gate electrode of said first MOS transistor, with the gate electrode connected to the input terminal of the unit circuit at the previous stage of said unit circuit.

Claim 6

An integrated high voltage generating system according to claim 4, further comprising: a smoothing capacitor connected between the gate electrode of said first MOS transistor and the reference potential point.

Claim 7

An integrated high voltage generating system according to claim 1 further comprising: a voltage detection circuit connected to said first power supply output terminal of said charge pump in order to detect if the voltage of said first power supply output terminal has exceeded a predetermined value or not; and means for maintaining the voltage of said first power supply output terminal of the charge pump at said predetermined value.

Claim 8

An integrated high voltage generating system according to claim 4, further comprising: a voltage detection circuit connected to said first power supply output terminal of said charge pump in order to detect if the voltage of said first power supply output terminal has exceeded a predetermined value or not; and means for maintaining the voltage of said first power supply output terminal of the charge pump at said predetermined value.

Claim 9

Integrated high voltage generating system comprising: first and second charge pump individually composed of plural unit circuits having one end of a capacitor connected to the input end of a diode element, wherein said plural unit circuits are uniformly arranged in the polarity of said diode elements, the output end of said diode element of the preceding stage is sequentially connected to the input end of said diode element of the succeeding stage, clock signals of mutually reverse phases are applied to the other end of said each capacitor of said adjacent unit circuits, and the electric charge stored in said capacitor of the preceding stage is sequentially transferred to said capacitor of the succeeding stage, thereby raise the voltage step by step, and the clock signals supplied to said first and second charge pumps reverse in phase to each other; a power supply input terminal connected to the input end of said diode element of the unit circuit at the first stage of said first and second charge pumps; a first power supply output terminal connected to the output end of said diode element of the unit circuit at the final stage of said first and second charge pumps; a second power supply output terminal; a third MOS transistor having the drain and source electrodes connected between said first and second power supply output terminals, with the gate electrode connected to the input end of any one of the unit circuits of said first charge pump; and a fourth MOS transistor having the drain and source electrodes connected between said first and second power supply output terminals, with the gate electrode connected to the input end of any one of the unit circuits of said second charge pump;

Claim 10

Integrated high voltage generating system comprising: first and second charge pump individually composed of plural unit circuits having one end of a capacitor connected to the input end of a diode element, wherein said plural unit circuits are uniformly arranged in the polarity of said diode elements, the output end of said diode element of the preceding stage is sequentially connected to the input end of said diode element of the succeeding stage, clock signals of mutually reverse phases are applied to the other end of said each capacitor of said adjacent unit circuits, and the electric charge stored in said capacitor of the preceding stage is sequentially transferred to said capacitor of the succeeding stage, thereby raise the voltage step by step, and the clock signals supplied to said first and second charge pumps reverse in phase to each other; a power supply input terminal connected to the input end of said diode element of the unit circuit at the first stage of said first and second charge pumps; a first power supply output terminal connected to the output end of said diode element of the unit circuit at the final stage of said first and second charge pumps; a second power supply output terminal; a third MOS transistor having the drain and source electrodes connected between said first and second power supply output terminals, with the gate electrode connected to the input end of any one of the unit circuits of said first charge pump; and a fourth MOS transistor having the drain and source electrodes connected between said first and second power supply output terminals, with the gate electrode connected to the input end of any one of the unit circuits of said second charge pump;

Claim 11

An integrated high voltage generating system of claim 8, further comprising: a voltage detection circuit connected to said first power supply output terminal of said charge pump in order to detect if the voltage of said first power supply output terminal has exceeded a predetermined value or not; and means for maintaining the voltage of said first power supply output terminal of the charge pump at said predetermined value.