Patent EP0286122A2 successfully refreshed from Google Patents.
EP0286122A2
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EP
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Solid-state imaging device having high-speed shutter function
Assignee: Toshiba Corp
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Filing: 1988-04-08
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Granted: —
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Expires: 2008-04-08
Abstract
Abstract Storage charges held in a photosensitive section (18) of a CCD (16), serving as a solid-state imaging device, are simultaneously transferred to a high-speed transfer section (20), in response to a field shift pulse (P₁) from a driver (14). The high-speed transfer section (20) then transfers the charges to a field memory (22), in unit of lines and at a high speed. The field memory (22) includes first and second memory arrays (22₁, 22₂) each having a one-field memory capacity and corresponding to a high-speed transfer array (20₁) in the high-speed transfer section (20). Charges from each high-speed transfer array (20₁) are alternately transferred to the first and second field memory arrays (22₁, 22₂) by a gate (28) controlled by gate pulses supplied from the driver (14). The charges stored in the first field memory array (22₁) are read out and transferred by a line transfer section (24), in units of lines, thereby obtaining a video signal of an odd-numbered field. Thereafter, the charges stored in the second field memory array (22₂) are read out and transferred by the line transfer section (24), in units of lines, thereby obtaining a video signal of an even-numbered field.
Inventors
- 👤 Yasuo C/O Patent Division Takemura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 18:40
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/70; H04N25/71; H04N25/715; H04N25/50; H04N25/53; H04N25/745
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
251 words
A solid-state imaging device having a high-speed shutter function, comprising: a photosensitive section (18) for storing charges corresponding to an amount of received light and a period of time during which the light is received; a vertical transfer section (20) to which the storage charges in said photosensitive section (18) are simultaneously transferred in response to a field shift pulse, said vertical transfer section (20) vertically transferring the transferred charges in units of lines and at a high speed; a field memory (22) for storing the charges transferred from said vertical transfer section (20); and a horizontal transfer section (24) for horizontally transferring, in units of lines, the charges stored in said field memory (22), characterized in that said field memory (22) includes first field memory means (22₁) having a one-field storage capacity for storing the charges transferred from said vertical transfer section (20), second field memory means (22₂) having a one-field storage capacity for storing the charges transferred from said vertical transfer section (20); said solid-state imaging device further comprises transfer means for alternately transferring the charges, which are transferred from said vertical transfer section (20) in units of lines, to said first and second field memory means (22₁, 22₂), and read means for reading out the charges stored in said first field memory means (22₁), and then reading out the charges stored in said second field memory means (22₂); and said horizontal transfer section (24) horizontally transfers, in units of lines, the charges read out by said read means.
Claim 2
Dependent Claim
251 words
A solid-state imaging device having a high-speed shutter function, comprising: a photosensitive section (18) for storing charges corresponding to an amount of received light and a period of time during which the light is received; a vertical transfer section (20) to which the storage charges in said photosensitive section (18) are simultaneously transferred in response to a field shift pulse, said vertical transfer section (20) vertically transferring the transferred charges in units of lines and at a high speed; a field memory (22) for storing the charges transferred from said vertical transfer section (20); and a horizontal transfer section (24) for horizontally transferring, in units of lines, the charges stored in said field memory (22), characterized in that said field memory (22) includes first field memory means (22₁) having a one-field storage capacity for storing the charges transferred from said vertical transfer section (20), second field memory means (22₂) having a one-field storage capacity for storing the charges transferred from said vertical transfer section (20); said solid-state imaging device further comprises transfer means for alternately transferring the charges, which are transferred from said vertical transfer section (20) in units of lines, to said first and second field memory means (22₁, 22₂), and read means for reading out the charges stored in said first field memory means (22₁), and then reading out the charges stored in said second field memory means (22₂); and said horizontal transfer section (24) horizontally transfers, in units of lines, the charges read out by said read means.
Claim 3
Dependent Claim
38 words
The solid-state imaging device according to claim 1, characterized in that the number of vertical pixels in each of said first and second field memory means (22₁, 22₂) is 1/2 that of vertical pixels in said photosensitive section.
Claim 4
Dependent Claim
59 words
The solid-state imaging device according to claim 1, characterized in that said transfer means includes gate means (28) arranged between said vertical transfer section (20) and said first field memory means (22₁), and between said vertical transfer section (20) and said second field memory means (22₂), and control means for controlling an enabled/disabled state of said gate means (28).
Claim 5
Dependent Claim
138 words
The solid-state imaging device according to claim 3, characterized in that said control means includes driver means (14) for generating the field shift pulse and drive pulses for driving said vertical transfer section (20) to transfer the transferred charges to said gate means (28), in units of lines and at a high speed, said driver means (14) being arranged to generate control pulses for causing said gate means (28) to transfer the charges, which are transferred from said vertical transfer section (20) in units of lines, to said first and second field memory means (22₁, 22₂), and alternately supply the control pulses to said gate means (28) between said vertical transfer section (20) and said first field memory means (22₁), and said gate means (28) between said vertical transfer section (20) and said second field memory means (22₂).
Claim 6
Dependent Claim
29 words
The solid-state imaging device according to claim 1, characterized in that said read means alternately reads out the charges from said first and second field memory means (22₁, 22₂).
Claim 7
Dependent Claim
74 words
The solid-state imaging device according to claim 5, characterized in that said read means comprises: first read means, for reading out the charges from said first field memory means (22₁) and reading out the charges from said second field memory means (22₂); second read means, for alternately reading out the charges from said first and second field memory means (22₁, 22₂); and read control means for selectively operating said first and second read means.
Claim 8
Dependent Claim
59 words
The solid-state imaging device according to claim 5, characterized in that said read means includes gate means (30ʹ) arranged between said first field memory means (22₁) and said horizontal transfer section (24), and between said second field memory means (22₂) and said horizontal transfer section (24), and control means for controlling an enabled/disabled state of said gate means (30ʹ).
Claim 9
Dependent Claim
204 words
The solid-state imaging device according to claim 7, characterized in that said control means includes driver means (14) for generating the field shift pulse, said driver means (14) being arranged to generate control pulses for causing said gate means (30ʹ) to transfer the charges from said first and second field memory means (22₁, 22₂) to said horizontal transfer section (24), and said driver means (14) being arranged to (a) supply the control pulses to said gate means (30ʹ) arranged between said first field memory means (22₁) and said horizontal transfer section (24), and then supply the control pulses to said gate means (30ʹ) arranged between said second field memory means (22₂) and said horizontal transfer section (24) when the charges are read out from said first field memory means (22₁), and then the charges are read out from said second field memory means (22₂), and (b) alternately supply the control pulses to said gate means (30ʹ) between said first field memory means (22₁) and said horizontal transfer section (24), and to said gate means (30ʹ) between said second field memory means (22₂) and said horizontal transfer section (24), when the charges are alternately read out from said first and second memory means (22₁, 22₂).
Claim 10
Dependent Claim
58 words
The solid-state imaging device according to claim 1, characterized in that said transfer means transfers the charges, which are transferred in units of lines from said vertical transfer section (20), to said first field memory means (22₁) until said first field memory means (22₂) is filled, and thereafter transfers the charges to said second field memory means (22₂).
Claim 11
Dependent Claim
80 words
The solid-state imaging device according to claim 9 characterized in that said transfer means comprises: first transfer means for transferring the charges to said first field memory means (22₁) until said first field memory means (22₁) is filled, thereafter transferring the charges to said second field memory means (22₂); second transfer means, for alternately transferring the charges to said first and second field memory means (22₁, 22₂); and transfer control means for selectively operating said first and second transfer means.
Claim 12
Dependent Claim
58 words
The solid-state imaging device according to claim 9, characterized in that said transfer means includes gate means (28) between said vertical transfer section (20) and said first field memory means (22₁), and between said vertical transfer section (20) and said second field memory means (22₂), and control means for controlling a enabled/disabled state of said gate means (28).
Claim 13
Dependent Claim
245 words
The solid-state imaging device according to claim 11, characterized in that said control means includes driver means (14) for generating the field shift pulse and drive pulses for driving said vertical transfer section (20) to transfer the transferred charges to said gate means (28) in units of lines and at a high speed, said driver means (14) being arranged to generate control pulses for causing said gate means (28) to transfer the charges, which are transferred in units of lines from said vertical transfer section (20), to said first and second field memory means (22₁, 22₂), and said driver means being arranged to (a) supply the control pulses to said gate means (28) arranged between said vertical transfer section (20) and said first field memory means (22₁), and then supply the control pulses to said gate means (28) arranged between said vertical transfer section (20) and said second field memory means (22₂), when the charges are transferred to said first field memory means (22₁), until said first field memory means (22₁) is filled, and thereafter transfer the charges are transferred to said second field memory means (22₂), and (b) alternately supply the control pulses to said gate means (28) between said vertical transfer section (20) and said first field memory means (22₁), and to said gate means (28) between said vertical transfer section (20) said second field memory means (22₂) when the charges are alternately transferred to said first and second memory means (22₁, 22₂).
References Cited (Backward Citations)
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