Patent EP0282407A2 successfully refreshed from Google Patents.
EP0282407A2
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EP
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Semiconductor device utilizing multiquantum wells
Assignee: Fujitsu Ltd
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Filing: 1988-03-08
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Granted: —
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Expires: 2008-03-08
Abstract
Abstract A semiconductor device comprises a first barrier layer (3), a quantum well layer (4) formed on the first barrier layer and having a bottom of conduction band with an energy which varies with a curve of second order, a second barrier layer (3) formed on said quantum well layer, and first and second contact layers (7, 6). The first barrier layer, the quantum well layer and the second barrier layer make up a layer sequence which is repeated a predetermined number of times, and the first contact layer connects to the first barrier layer in a first of the predetermined number of layer sequences, while the second contact layer connects to the second barrier layer in a last of the predetermined number of layer sequences.
Inventors
- 👤 Toshio Oshima
- 👤 Toshiro Futatsugi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 15:44
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/0422; H01S5/30; H01S5/34; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10D8/00; H10D8/70; H10D8/755; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H01S5/3408; H01S5/3418; H01S5/3425
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
128 words
A semiconductor device characterized in that there are provided: a first barrier layer (3, 23); a quantum well layer (4, 24) formed on said first barrier layer and having a bottom of conduction band with an energy which varies with a curve of second order; a second barrier layer (3, 23) formed on said quantum well layer, said first barrier layer, said quantum well layer and said second barrier layer making up a layer sequence which is repeated a predetermined number of times; a first contact layer (7, 30) connected to the first barrier layer in a first of the predetermined number of layer sequences; and a second contact layer (6, 29) connected to the second barrier layer in a last of the predetermined number of layer sequences.
Claim 2
Dependent Claim
128 words
A semiconductor device characterized in that there are provided: a first barrier layer (3, 23); a quantum well layer (4, 24) formed on said first barrier layer and having a bottom of conduction band with an energy which varies with a curve of second order; a second barrier layer (3, 23) formed on said quantum well layer, said first barrier layer, said quantum well layer and said second barrier layer making up a layer sequence which is repeated a predetermined number of times; a first contact layer (7, 30) connected to the first barrier layer in a first of the predetermined number of layer sequences; and a second contact layer (6, 29) connected to the second barrier layer in a last of the predetermined number of layer sequences.
Claim 3
Dependent Claim
19 words
A semiconductor device as claimed in claim 1, characterized in that said semiconductor device constitutes a negative resistance diode.
Claim 4
Dependent Claim
19 words
A semiconductor device as claimed in claim 1, characterized in that said semiconductor device constitutes a hot electron transistor.
Claim 5
Dependent Claim
18 words
A semiconductor device as claimed in claim 1, characterized in that said semiconductor device constitutes a laser diode.
Claim 6
Dependent Claim
17 words
A semiconductor device as claimed in claim 1, characterized in that said semiconductor device constitutes a photodetector.
Claim 7
Dependent Claim
70 words
A semiconductor device as claimed in claim 1, characterized in that said first and second barrier layers (3, 23) are made of aluminum gallium arsenide (Al x Ga 1-x As) and said well layer (4, 24) is made up of first, second and third layers, said first and third layers being made of aluminum gallium arsenide (Al x Ga 1-x As), said second layer being made of gallium arsenide (GaAs).
Claim 8
Dependent Claim
29 words
A semiconductor device as claimed in claim 6, characterized in that an aluminum (Al) content x in said well layer (4, 24) varies with a curve of second order.
Claim 9
Dependent Claim
29 words
A semiconductor device as claimed in claim 6, characterized in that said well layer (4, 24) has a film thickness which varies in said predetermined number of layer sequences.
Claim 10
Dependent Claim
90 words
A semiconductor device as claimed in claim 1, characterized in that said first and second barrier layers (3, 23) are made of a first material selected from a group of aluminum gallium arsenide (AlGaAs), indium phosphor (InP) and indium aluminum arsenide (InAlAs), and said well layer (4, 24) is made up of first, second and third layers, said first and third layers being made of said first material, said second layer being made of a second material selected from a group of gallium arsenide (GaAs) and indium gallium arsenide (InGaAs).
Claim 11
Dependent Claim
36 words
A semiconductor device as claimed in claim 1, characterized in that each of said layer sequences forms a quantum well having a bottom of conduction band with an energy described by a curve of second order.
References Cited (Backward Citations)
No citation records indexed.
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