EP0281335A2
Expired / Lapsed
EP
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Process for producing a semiconductor article
Assignee: Canon Inc
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Filing: 1988-02-26
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Granted: —
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Expires: 2008-02-26
Abstract
Abstract A process for producing a semiconductor article comprises applying crystal formation treatment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor crystal regions different in their characteristics within at least part of said semiconductor monocrystal.
Inventors
- 👤 Kenji Yamagata
- 👤 Takeshi Ichikawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 18:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S117/00; Y10S117/913
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
105 words
A process for producing a semiconductor article which comprises applying crystal formation treatment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor cyrstal regions different in their characteristics within at least part of said semiconductor monocrystal.
Claim 2
Dependent Claim
105 words
A process for producing a semiconductor article which comprises applying crystal formation treatment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor cyrstal regions different in their characteristics within at least part of said semiconductor monocrystal.
Claim 3
Dependent Claim
23 words
A process according to Claim 1, wherein said semiconductor monocrystal is then flattened to expose said semiconductor crystal regions different in their characteristics.
Claim 4
Dependent Claim
34 words
A process according to Claim 1 or 2, wherein at least one of said semiconductor crystal regions is divided by use of the fine working technique to form a plurality of semiconductor crystal regions.
Claim 5
Dependent Claim
29 words
A process according to Claim 1, 2 or 3, wherein said semiconductor crystal regions are doped with desired impurities in the step of permitting a semiconductor monocrystal to grow.
Claim 6
Dependent Claim
25 words
A process according to Claim 4, wherein the condition of said doping is varied stepwise to form continuously semiconductor crystal regions of desired conduction types.
Claim 7
Dependent Claim
15 words
A process according to any preceding claim, wherein said nucleation surface is formed by patterning.
Claim 8
Dependent Claim
41 words
A process according to any of claims 1 to 5, wherein said nucleation surface is formed by forming a deposition film of said amorphous material on the substrate surface exhibiting said larger nucleation density and making an opening in said film.
Claim 9
Dependent Claim
29 words
A process according to any of claims 1 to 5. wherein said nucleation surface is formed by applying ion implantation to the substrate surface exhibiting said smaller nucleation density.
Claim 10
Dependent Claim
21 words
A process according to any preceding claim, wherein said nucleation surface and nonnucleation surface are formed on a desired underlying material.
References Cited (Backward Citations)
EP0244081A1
Cited
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