Patent EP0281233A1 successfully refreshed from Google Patents.
EP0281233A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Improved formation of dielectric on deposited silicon
Assignee: AT&T Inc
•
Filing: 1988-01-22
•
Granted: —
•
Expires: 2008-01-22
Abstract
Abstract A deposited doped silicon layer has formed thereon a dielectric layer of improved quality by depositing an initial undoped portion (11) of the silicon layer, followed by depositing a doped portion (21). The dielectric (31) is then formed, typically by oxidizing the surface of the silicon. The silicon is typically amorphous as deposited, and the dopant is typically phosphorus. The resulting layers may be used in capacitors and other solid state device structures. It appears that the improved dielectric quality, including a higher breakdown voltage and reduced leakage, is due to improved surface smoothness.
Inventors
- 👤 Alain Simon Harrus
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 06:46
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D64/00; H10D64/01; H10D64/031; H10D64/035
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
62 words
A method of making a solid state device CHARACTERIZED by step comprising depositing a first layer (11) of silicon that does not include a conductivity-enhancing dopant onto a surface; depositing a second layer (21) of silicon that includes a conductivity-enhancing dopant onto said first layer; and thereafter forming a dielectric layer (31) on the exposed surface of said second layer of silicon.
Claim 2
Independent Claim
62 words
A method of making a solid state device CHARACTERIZED by step comprising depositing a first layer (11) of silicon that does not include a conductivity-enhancing dopant onto a surface; depositing a second layer (21) of silicon that includes a conductivity-enhancing dopant onto said first layer; and thereafter forming a dielectric layer (31) on the exposed surface of said second layer of silicon.
Claim 3
Dependent Claim
10 words
The method of claim 1 wherein said dopant is phosphorus.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein said dielectric layer is silicon dioxide.
Claim 5
Dependent Claim
22 words
The method of claim 3 wherein said silicon dioxide is formed by oxidizing the exposed surface of said second layer of silicon.
Claim 6
Dependent Claim
19 words
The method of claim 4 wherein said oxidizing is accomplished by heating said silicon in an atmosphere comprising oxygen.
Claim 7
Dependent Claim
31 words
The method of claim 5 wherein said heating is accomplished for a time and at a temperature sufficient to diffuse said given dopant from said second layer into said first layer.
Claim 8
Dependent Claim
12 words
The method of claim 5 wherein said atmosphere is a dry atmosphere.
Claim 9
Dependent Claim
12 words
The method of claim 5 wherein said atmosphere is a steam atmosphere.
Claim 10
Dependent Claim
12 words
The method of claim 5 wherein said atmosphere is a plasma atmosphere.
Claim 11
Dependent Claim
12 words
The method of claim 1 wherein said silicon is amorphous as deposited.
Claim 12
Dependent Claim
20 words
The method of claim 10 wherein said forming a dielectric layer causes the amorphous silicon to convert to polycrystalline silicon.
Claim 13
Dependent Claim
23 words
The method of claim 1 wherein said surface onto which said first layer of silicon is deposited is the surface of a dielectric.
Claim 14
Dependent Claim
20 words
The method of claim 12 wherein the dielectric onto which said first layer of silicon is deposited is silicon dioxide.
Claim 15
Dependent Claim
17 words
The method of claim 1 further comprising the step of depositing a conductor onto said dielectric layer.
Claim 16
Dependent Claim
15 words
The method of claim 1 wherein said dielectric layer comprises at least two dielectric materials.
Claim 17
Dependent Claim
15 words
The method of claim 15 wherein said dielectric materials include silicon dioxide and silicon nitride.
Claim 18
Dependent Claim
17 words
The method of claim 1 wherein said dielectric layer has a thickness of at least 5 nanometers.
Claim 19
Dependent Claim
17 words
The method of claim 1 wherein said dielectric layer has a thickness of less than 100 nanometers.
Claim 20
Dependent Claim
21 words
The method of claim 1 wherein said dielectric layer has a thickness in the range of from 10 to 50 nanometers.
References Cited (Backward Citations)
FR2536208A1
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.