Patent EP0279670A2 successfully refreshed from Google Patents.
EP0279670A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A reflection type mask
Assignee: Canon Inc
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Filing: 1988-02-18
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Granted: —
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Expires: 2008-02-18
Abstract
Abstract A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.
Inventors
- 👤 Tsutomu Ikeda
- 👤 Yutaka Watanabe
- 👤 Masayuki Suzuki
- 👤 Masami Hayashida
- 👤 Yasuaki Fukuda
- 👤 Shigetaro Ogura
- 👤 Takashi Iizuka
- 👤 Masahito Niibe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 15:16
CPC Classifications
B; B82; B82Y; B82Y10/00; G; G03; G03F; G03F1/00; G03F1/22; G03F1/24; B82Y40/00; G03F1/54; G03F1/58; G03F7/00; G03F7/70; G03F7/70008; G03F7/70033; G03F7/70216; G03F7/70233; G03F7/70283; G03F7/708; G03F7/70858; G03F7/70866; G03F7/70875; G03F7/7095; G03F7/70958
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
61 words
A reflection type mask usable in an exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material, by use of a radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a reflective portion formed by a multilayered film; and a non-reflective portion formed on said reflective portion to provide a pattern.
Claim 2
Dependent Claim
61 words
A reflection type mask usable in an exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material, by use of a radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a reflective portion formed by a multilayered film; and a non-reflective portion formed on said reflective portion to provide a pattern.
Claim 3
Dependent Claim
28 words
A reflection type mask according to Claim 1, wherein said non-reflective portion is made of a material which is effective to absorb soft X-rays or vacuum ultravoilet rays.
Claim 4
Dependent Claim
23 words
A reflection type mask according to Claim 1, wherein said non-reflective portion is provided by an unti-reflection film having a multi- layered structure.
Claim 5
Dependent Claim
48 words
A reflection type mask according to Claim 3, wherein each layer in the multilayered structure of said non-reflective portion has a thickness approximately of an order of λ/4n where λ is the wavelength of a radiation to be used with said mask and n is the refractive index.
Claim 6
Dependent Claim
39 words
A reflection type mask according to Claim 2, wherein said absorbing material of said non-reflective portion has a linear expansion coefficient not greater than 5 x 10- 5 deg- 1 and a heat conductivity not less than 0.1 J/cm.s.deg.
Claim 7
Dependent Claim
27 words
A reflection type mask according to Claim 1, wherein said multilayered film of said reflective portion is formed by alternately layering different materials having different optical constants.
Claim 8
Dependent Claim
43 words
A reflection type mask according to Claim 6, wherein a first layer having a refractive Index whose real number portion is smaller and a second layer having a refractive index whose real number portion is larger are placed alternately in said multilayered film.
Claim 9
Dependent Claim
81 words
A reflection type mask usable in a semiconductor device manufacturing exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material by use of a radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a substrate which is non-reflective to soft X-rays or vacuum ultraviolet rays to be used in the exposure apparatus; and a reflective portion comprising a multi- layered film and being formed on said substrate to provide a pattern.
Claim 10
Dependent Claim
81 words
A reflection type mask usable in a semiconductor device manufacturing exposure apparatus for transferring a pattern of the mask onto a workpiece coated with a sensitive material by use of a radiation such as soft X-rays or vacuum ultraviolet rays, said mask comprising: a substrate which is non-reflective to soft X-rays or vacuum ultraviolet rays to be used in the exposure apparatus; and a reflective portion comprising a multi- layered film and being formed on said substrate to provide a pattern.
Claim 11
Dependent Claim
23 words
A reflection type mask according to Claim 8, wherein said multilayered film is formed by alternately layering different materials having different optical constants.
Claim 12
Dependent Claim
36 words
A reflection type mask according to Claim 8, wherein said substrate is made of a material having a linear expansion coefficient not greater than 1 x 10-b/Kw and a heat conductivity not less than 20 w/mK.
Claim 13
Dependent Claim
43 words
A reflection type mask according to Claim 9, wherein a first layer having a refractive Index whose real number portion is smaller and a second layer having a refractive index whose real number portion is larger are placed alternately in said multilayered film.
Claim 14
Dependent Claim
15 words
A reflection type mask according to Claim 8, wherein said substrate has a curved surface.
Claim 15
Dependent Claim
26 words
A reflection type mask according to Claim 1, further comprising a substrate upon which said reflective portion is provided, wherein said substrate has a curved surface.
Claim 16
Dependent Claim
58 words
A reflection type mask, comprising: a reflective portion having a multilayered structure in which different materials showing different optical constants with regard to soft X-ray and/or vacuum ultraviolet rays are layered alternately; and a non-reflective portion formed in said reflective portion to provide a pattern, wherein the regularity of the multilayered structure is destroyed in said non-reflective portion.
Claim 17
Dependent Claim
58 words
A reflection type mask, comprising: a reflective portion having a multilayered structure in which different materials showing different optical constants with regard to soft X-ray and/or vacuum ultraviolet rays are layered alternately; and a non-reflective portion formed in said reflective portion to provide a pattern, wherein the regularity of the multilayered structure is destroyed in said non-reflective portion.
Claim 18
Independent Claim
77 words
A method of manufacturing a reflection type mask, said method comprising the steps of: alternately layering different materials showing different optical constants with respect to soft X-rays and/or vacuum ultraviolet rays to provide a reflective portion of a multilayered structure; and destroying the regularity of the multilayered structure of a part of the reflective portion, in accordance with the geometrical configuration of a pattern to be formed on the mask, so as to provide a non-reflective portion.
Claim 19
Independent Claim
77 words
A method of manufacturing a reflection type mask, said method comprising the steps of: alternately layering different materials showing different optical constants with respect to soft X-rays and/or vacuum ultraviolet rays to provide a reflective portion of a multilayered structure; and destroying the regularity of the multilayered structure of a part of the reflective portion, in accordance with the geometrical configuration of a pattern to be formed on the mask, so as to provide a non-reflective portion.
Claim 20
Dependent Claim
25 words
A method according to Claim 15, wherein a converging ion beam or a laser beam is used to destroy the regularity of the multilayered structure.
References Cited (Backward Citations)
No citation records indexed.
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