Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
140 words
A method for producing a patterned resist image on a substrate comprising the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing -OH or -NH- groups over said planarizing layer, (c) imagewise exposing said resist to activating radiation, (d) developing said exposed resist, (e) contacting said developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, said silicon-containing compound having the structural formula: wherein: X¹ and X² are individually chloro or wherein R³ and R⁴ are individually H or alkyl containing from 1 to 3 carbon atoms; and R¹ and R² are individually H or alkyl containing from 1 to 3 carbon atoms; and (f) contacting said planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.
Claim 2
Independent Claim
140 words
A method for producing a patterned resist image on a substrate comprising the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing -OH or -NH- groups over said planarizing layer, (c) imagewise exposing said resist to activating radiation, (d) developing said exposed resist, (e) contacting said developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, said silicon-containing compound having the structural formula: wherein: X¹ and X² are individually chloro or wherein R³ and R⁴ are individually H or alkyl containing from 1 to 3 carbon atoms; and R¹ and R² are individually H or alkyl containing from 1 to 3 carbon atoms; and (f) contacting said planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.
Claim 3
Dependent Claim
25 words
The method of claim 1 wherein said developed resist is exposed to a UV light source prior to contacting said resist with said silicon-containing compound.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein at least one of R¹, R², R³ and R⁴ is H.
Claim 5
Dependent Claim
25 words
The method of claim 1 wherein said silicon-containing compound is selected from the group consisting of dichlorodimethylsilane, dichloromethylsilane, bis(dimethylamino)dimethylsilane, bis(dimethylamino)methylsilane, dimethylamino chlorodimethylsilane, and dimethylamino chloromethylsilane.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein said silicon-containing compound is selected from the group consisting of dichloromethylsilane, bis(dimethylamino)methylsilane, and dimethylamino chloromethylsilane.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein said resist has a glass transition temperature of less than about 75°C.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein said resist comprises a novolac resin.
Claim 9
Dependent Claim
20 words
The method of claim 1 wherein portions of said planarizing layer are preferentially removed by an oxygen reactive ion etch.