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Patent EP0273726A2 successfully refreshed from Google Patents.
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EP0273726A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

A semiconductor laser device

Assignee: Sharp Corp
•
Filing: 1987-12-23
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Granted: —
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Expires: 2007-12-23
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Abstract

Abstract A semiconductor laser device comprising a double-heterostructure that is composed of an active layer (15) and a pair of cladding layers (13,17) sandwiching the active layer (15) therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers (14,16) positioned between one cladding layer (13) and the active layer (15) and between the active layer (15) and the other cladding layer (17), wherein the resistance of one optical guiding layer (16) positioned at the striped structure side is higher than that of the other optical guiding layer (14) positioned opposite to the striped structure side.

Inventors

  • 👤 Toshiro Hayakawa
  • 👤 Takahiro Suyama
  • 👤 Kosei Takahashi
  • 👤 Masafumi Kondo

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 19:24
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2054; H01S5/2081; H01S5/2237; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32316

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 113 words
A semiconductor laser device comprising: a double-heterostructure that is composed of an active layer (15) and a pair of cladding layers (13,17) sandwiching said active layer (15) therebetween, a striped structure in which current injected into said laser device is confined, said striped structure being constituted by a part of said double-­heterostructure, and optical guiding layers (14,16) positioned between one cladding layer (13) and said active layer (15) and between said active layer (15) and the other cladding layer (17) wherein the resistance of one optical guiding layer (16) positioned at the striped structure side is higher than that of the other optical guiding layer (14) positioned opposite to the striped structure side.
Claim 2
Dependent Claim 113 words
A semiconductor laser device comprising: a double-heterostructure that is composed of an active layer (15) and a pair of cladding layers (13,17) sandwiching said active layer (15) therebetween, a striped structure in which current injected into said laser device is confined, said striped structure being constituted by a part of said double-­heterostructure, and optical guiding layers (14,16) positioned between one cladding layer (13) and said active layer (15) and between said active layer (15) and the other cladding layer (17) wherein the resistance of one optical guiding layer (16) positioned at the striped structure side is higher than that of the other optical guiding layer (14) positioned opposite to the striped structure side.
Claim 3
Dependent Claim 17 words
A semiconductor laser device according to claim 1, wherein said striped structure is formed into a mesa.
Claim 4
Dependent Claim 17 words
A semiconductor laser device according to claim 1, wherein said striped structure is formed into a ridge.
Claim 5
Dependent Claim 36 words
A semiconductor laser device according to claim 1, wherein the thickness of a portion of the cladding layer (17) outisde of the striped structure, which is positioned at the striped structure side, is 500Å or less.

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