Patent EP0271341A2 successfully refreshed from Google Patents.
EP0271341A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method and apparatus for ion etching
Assignee: Individual
•
Filing: 1987-12-10
•
Granted: —
•
Expires: 2007-12-10
Abstract
Abstract Apparatus for use in treating semiconductor wafers or other work pieces by an active ion technique or by chemical vapour deposition, comprising a "vacuum" chamber having means for connection to an evacuating pump and to a source of the selected gas, an induction coil surrounding part of the chamber and connected to an alternating current supply to create a plasma within the chamber containing ionised elements of the gas, a support for the work piece within the chamber, and means for creating an electric field between the support and part of the chamber where the plasma exists.
Inventors
- 👤 Frank Keeble
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 08:58
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/32431; H01J37/32697; H01J37/32706
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
98 words
An apparatus for use in treating semiconductor wafers or other work pieces by an active ion technique or by chemical vapour deposition, comprising a "vacuum" chamber having means for connection to an evacuating pump and to a source of the selected gas, an induction coil surrounding part of the chamber and connected to an alternating current supply to create a plasma within the chamber containing ionised elements of the gas, a support for the work piece within the chamber, and means for creating an electric field between the support and part of the chamber where the plasma exists.
Claim 2
Independent Claim
98 words
An apparatus for use in treating semiconductor wafers or other work pieces by an active ion technique or by chemical vapour deposition, comprising a "vacuum" chamber having means for connection to an evacuating pump and to a source of the selected gas, an induction coil surrounding part of the chamber and connected to an alternating current supply to create a plasma within the chamber containing ionised elements of the gas, a support for the work piece within the chamber, and means for creating an electric field between the support and part of the chamber where the plasma exists.
Claim 3
Dependent Claim
15 words
An apparatus according to Claim 1, including means for controlling or adjusting the electric field.
Claim 4
Dependent Claim
22 words
An apparatus according to Claim 1 or Claim 2, including means for controlling or adjusting the electric supply to the induction coil.
Claim 5
Dependent Claim
27 words
An invention as in any of the preceding claims, including means for adjusting or controlling independent the electric field and the electric supply to the induction coil.
Claim 6
Independent Claim
102 words
A method of treating a semiconductor wafer or other work piece by an active ion technique or by chemical vapour deposition, in which the work piece is placed in a "vacuum" chamber which is evacuated to a low pressure, a selected gas is introduced under control, a gas plasma is created within the chamber by means of an external induction coil, the plasma intensity is controlled or adjusted by controlling the supply to the coil, and ionised particles are caused to move onto the work piece by creating an electric field within the chamber between the plasma zone and the work piece.
Claim 7
Independent Claim
102 words
A method of treating a semiconductor wafer or other work piece by an active ion technique or by chemical vapour deposition, in which the work piece is placed in a "vacuum" chamber which is evacuated to a low pressure, a selected gas is introduced under control, a gas plasma is created within the chamber by means of an external induction coil, the plasma intensity is controlled or adjusted by controlling the supply to the coil, and ionised particles are caused to move onto the work piece by creating an electric field within the chamber between the plasma zone and the work piece.
Claim 8
Dependent Claim
18 words
A method according to Claim 5, in which the electric field is controlled independently of the electric supply.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.