Patent EP0270369A2 successfully refreshed from Google Patents.
EP0270369A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Multilayer ceramics from hydrogen silsesquioxane
Assignee: Dow Silicones Corp
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Filing: 1987-12-03
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Granted: —
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Expires: 2007-12-03
Abstract
Abstract This invention related to materials produced by diluting in a solvent a hydrogen silsesquioxane resin solvent solution which is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO₂ coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.
Inventors
- 👤 Loren Andrew Haluska
- 👤 Keith Winton Michael
- 👤 Leo Tarhay
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 07:58
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/5025; C04B41/5035; C04B41/5053; C04B41/5062; C04B41/5066; C04B41/52; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C04B41/89; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/6903; H10P14/6905; C04B2111/00; C04B2111/00474; C04B2111/00844; H10P14/6336; H10P14/6342; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/6922; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
771 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent and applying the diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like planarizing coating: (II) applying to the planarizing coating a passivating coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms, and (ii) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms, to produce the passivating ceramic or ceramic-like coating, and (III) applying to the passivating ceramic or ceramic-like coating a silicon-containing coating selected from the group consisting of (i) silicon coating, (ii) a silicon carbon-containing coating, (iii) a silicon nitrogen-containing coating, and (iv) a silicon carbon nitrogen-containing coating, wherein the silicon coating is applied onto the passivating coating by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, or (c) metal assisted chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, and wherein the silicon carbon-containing coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, and (C) ceramification of a silicon and nitrogen-containing preceramic polymer, and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce the silicon-containing coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 2
Dependent Claim
771 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent and applying the diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like planarizing coating: (II) applying to the planarizing coating a passivating coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms, and (ii) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms, to produce the passivating ceramic or ceramic-like coating, and (III) applying to the passivating ceramic or ceramic-like coating a silicon-containing coating selected from the group consisting of (i) silicon coating, (ii) a silicon carbon-containing coating, (iii) a silicon nitrogen-containing coating, and (iv) a silicon carbon nitrogen-containing coating, wherein the silicon coating is applied onto the passivating coating by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, or (c) metal assisted chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, and wherein the silicon carbon-containing coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, and (C) ceramification of a silicon and nitrogen-containing preceramic polymer, and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce the silicon-containing coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 3
Dependent Claim
428 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like coating, which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent and applying the diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating a passivating ceramic or ceramic-like coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the ceramic or ceramic-lie coated electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon nitrogen-containing coating is applied onto the ceramic or ceramic-like coated electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, and (ii) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, to produce the passivating ceramic or ceramic-like coating, whereby a dual layer, ceramic or ceramic-like coating is obtained on the electronic device.
Claim 4
Dependent Claim
428 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like coating, which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent and applying the diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating a passivating ceramic or ceramic-like coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the ceramic or ceramic-lie coated electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon nitrogen-containing coating is applied onto the ceramic or ceramic-like coated electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, and (ii) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, to produce the passivating ceramic or ceramic-like coating, whereby a dual layer, ceramic or ceramic-like coating is obtained on the electronic device.
Claim 5
Dependent Claim
114 words
A process for forming on a substrate a monolayer, ceramic or ceramic-like, planarizing coating which process comprises: (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent and applying the diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a hydrogen silsesquioxane resin preceramic coating on the electronic device; and (C) ceramifying the hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to thereby produce on the electronic device the monolayer, ceramic or ceramic like, planarizing coating.
Claim 6
Dependent Claim
114 words
A process for forming on a substrate a monolayer, ceramic or ceramic-like, planarizing coating which process comprises: (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent and applying the diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a hydrogen silsesquioxane resin preceramic coating on the electronic device; and (C) ceramifying the hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to thereby produce on the electronic device the monolayer, ceramic or ceramic like, planarizing coating.
Claim 7
Dependent Claim
162 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at a temperature of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof in the vapor phase, at a temperature between 150 and 600°C., in the presence of the ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 8
Dependent Claim
162 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at a temperature of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof in the vapor phase, at a temperature between 150 and 600°C., in the presence of the ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 9
Dependent Claim
166 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysiloxane or mixture thereof, and ammonia, in the vapor phase, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon in obtained.
Claim 10
Dependent Claim
166 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysiloxane or mixture thereof, and ammonia, in the vapor phase, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon in obtained.
Claim 11
Dependent Claim
177 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber a silane, alkylsilane, halosilane, halodisilane, halopolysilane, or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 12
Dependent Claim
177 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber a silane, alkylsilane, halosilane, halodisilane, halopolysilane, or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 13
Dependent Claim
158 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of decomposing in a reaction chamber hexamethyldisilazane, in the vapor phase, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 14
Dependent Claim
158 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of decomposing in a reaction chamber hexamethyldisilazane, in the vapor phase, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 15
Dependent Claim
261 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with the diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent, a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature of 150 to 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic silicon nitrogen-containing coating, and (C) applying to the ceramic coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane or mixture thereof in the vapor phase, at a temperature between 150 and 600°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 16
Dependent Claim
261 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with the diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent, a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature of 150 to 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic silicon nitrogen-containing coating, and (C) applying to the ceramic coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane or mixture thereof in the vapor phase, at a temperature between 150 and 600°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 17
Dependent Claim
268 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane or mixture thereof, and ammonia, in the vapor phase, at a temperature between 190 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 18
Dependent Claim
268 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane or mixture thereof, and ammonia, in the vapor phase, at a temperature between 190 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 19
Dependent Claim
280 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 20
Dependent Claim
280 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 21
Dependent Claim
255 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce the ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and, (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of chemical vapor deposition of hexamethyldisilazane, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 22
Dependent Claim
255 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce the ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and, (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of chemical vapor deposition of hexamethyldisilazane, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 23
Dependent Claim
256 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and, (C) applying to the ceramic or ceramic-like coating a silicon carbon nitrogen-containing coating by means of plasma enhanced chemical vapor deposition of hexamethyldisilazane, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 24
Dependent Claim
256 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and, (C) applying to the ceramic or ceramic-like coating a silicon carbon nitrogen-containing coating by means of plasma enhanced chemical vapor deposition of hexamethyldisilazane, at a temperature between 150 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 25
Dependent Claim
273 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce the ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and, (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce the silicon carbon nitrogen-containing coating, thereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 26
Dependent Claim
273 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce the ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and, (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce the silicon carbon nitrogen-containing coating, thereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 27
Dependent Claim
276 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing coating, and, (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce the silicon carbon nitrogen-containing coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 28
Dependent Claim
276 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing coating, and, (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce the silicon carbon nitrogen-containing coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 29
Dependent Claim
215 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin, preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, and heating the coated device to a temperature between 150 and 400°C. in an inert or ammonia-containing atmosphere to produce the passivating silicon nitrogen-containing coating, thereby producing a dual layer, ceramic or ceramic-like coating on the electronic device.
Claim 30
Dependent Claim
215 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin, preceramic material with a solvent, coating an electronic device with said diluted preceramic hydrogen silsesquioxane resin solution, drying the diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000°C. to produce a ceramic or ceramic-like coating, and, (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, and heating the coated device to a temperature between 150 and 400°C. in an inert or ammonia-containing atmosphere to produce the passivating silicon nitrogen-containing coating, thereby producing a dual layer, ceramic or ceramic-like coating on the electronic device.
Claim 31
Independent Claim
116 words
A method of coating a substrate with a ceramic or ceramic-like silicon nitrogen-containing material, wherein said method comprises the steps of: (1) diluting with a solvent a silicon and nitrogen-containing preceramic polymer produced by reacting a cyclic silazane or a mixture of cyclic silazanes with a silicon-containing material selected from the group consisting of halodisilanes and halosilanes; (2) coating a substrate with the diluted preceramic polymer solvent solution; (3) drying the diluted preceramic polymer solvent solution in the absence of air so as to evaporate the solvent and thereby deposit a preceramic polymer coating on the substrate, and (4) heating the coated substrate in the absence of air to produce a ceramic or ceramic-like coated substrate.
Claim 32
Independent Claim
116 words
A method of coating a substrate with a ceramic or ceramic-like silicon nitrogen-containing material, wherein said method comprises the steps of: (1) diluting with a solvent a silicon and nitrogen-containing preceramic polymer produced by reacting a cyclic silazane or a mixture of cyclic silazanes with a silicon-containing material selected from the group consisting of halodisilanes and halosilanes; (2) coating a substrate with the diluted preceramic polymer solvent solution; (3) drying the diluted preceramic polymer solvent solution in the absence of air so as to evaporate the solvent and thereby deposit a preceramic polymer coating on the substrate, and (4) heating the coated substrate in the absence of air to produce a ceramic or ceramic-like coated substrate.
Claim 33
Dependent Claim
14 words
A method as claimed in Claim 16, wherein the substrate is an electronic device.
Claim 34
Dependent Claim
14 words
A coating prepared by a process according to any of Claims 1 to 17.
Claim 35
Dependent Claim
15 words
An electronic device coated by a process according to any of Claims 1 to 17.
Claim 36
Dependent Claim
17 words
A coating as claimed in Claim 18, wherein the coating is used as an interlevel dielectric layer.
References Cited (Backward Citations)
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