Patent EP0270263A2 successfully refreshed from Google Patents.
EP0270263A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Multilayer ceramic coatings from metal oxides for protection of electronic devices
Assignee: Dow Silicones Corp
•
Filing: 1987-11-11
•
Granted: —
•
Expires: 2007-11-11
Abstract
Abstract This invention relates to materials produced by diluting in a solvent a preceramic mixture of a hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, a titanium alkoxide, and a zirconium alkoxide. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO₂/metal oxide coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.
Inventors
- 👤 Loren Andrew Haluska
- 👤 Keith Winton Michael
- 👤 Leo Tarhay
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 22:28
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/01; H10W74/40; H10W74/43; H10W74/47; H10W74/476
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
794 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like, coating which process comprises: (I) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like planarizing coating a passivating coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the ceramic or ceramic-like coated electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and (ii) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, to produce the passivating coating, and (III) applying to the passivating coating a silicon-containing coating selected from the group consisting of (i) a silicon coating, (ii) a silicon carbon-containing coating, (iii) a silicon nitrogen-containing coating, and (iv) a silicon carbon nitrogen-containing coating, wherein the silicon coating is applied onto the passivating coating by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, or (c) metal assisted chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof; and wherein the silicon carbon-containing coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, and (C) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce a silicon-containing coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 2
Dependent Claim
794 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like, coating which process comprises: (I) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like planarizing coating a passivating coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the ceramic or ceramic-like coated electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and (ii) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, to produce the passivating coating, and (III) applying to the passivating coating a silicon-containing coating selected from the group consisting of (i) a silicon coating, (ii) a silicon carbon-containing coating, (iii) a silicon nitrogen-containing coating, and (iv) a silicon carbon nitrogen-containing coating, wherein the silicon coating is applied onto the passivating coating by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, or (c) metal assisted chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof; and wherein the silicon carbon-containing coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, and (C) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce a silicon-containing coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 3
Dependent Claim
442 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like, coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like planarizing coating a passivating coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the ceramic or ceramic-like coated electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and (ii) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, to produce a passivating coating, whereby a dual layer, ceramic or ceramic-like coating is obtained on the electronic device.
Claim 4
Dependent Claim
442 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like, coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like planarizing coating a passivating coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the ceramic or ceramic-like coated electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and (ii) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, to produce a passivating coating, whereby a dual layer, ceramic or ceramic-like coating is obtained on the electronic device.
Claim 5
Dependent Claim
122 words
A process for forming on a substrate a monolayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; and (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like coating.
Claim 6
Dependent Claim
122 words
A process for forming on a substrate a monolayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; and (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like coating.
Claim 7
Dependent Claim
185 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like, coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof in the vapor phase, at a temperature between 200 and 600°C., in the presence of the ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 8
Dependent Claim
185 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like, coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof in the vapor phase, at a temperature between 200 and 600°C., in the presence of the ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 9
Dependent Claim
190 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precorsor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof, and ammonia, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 10
Dependent Claim
190 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precorsor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof, and ammonia, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 11
Dependent Claim
216 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating for the protection of an electronic device, or for other functional purposes, which process comprises: (I) (A) coating an electronic device with a ceramic or ceramic-like planarizig coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber a silane, alkylsilane, halosilane, halodisilane, halopolysilane, or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 12
Dependent Claim
216 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating for the protection of an electronic device, or for other functional purposes, which process comprises: (I) (A) coating an electronic device with a ceramic or ceramic-like planarizig coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber a silane, alkylsilane, halosilane, halodisilane, halopolysilane, or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 13
Dependent Claim
197 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating for the protection of an electronic device, or for other functional purposes, which process comprises (I) (A) coating an electronic device with a ceramic or ceramic-like planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like coated device an silicon carbon nitrogen-containing coating by means of decomposing in a reaction chamber hexamethyldisilazane, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 14
Dependent Claim
197 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating for the protection of an electronic device, or for other functional purposes, which process comprises (I) (A) coating an electronic device with a ceramic or ceramic-like planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like coated device an silicon carbon nitrogen-containing coating by means of decomposing in a reaction chamber hexamethyldisilazane, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 15
Dependent Claim
286 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) Coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminium alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and a metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the planarizing coating of the electronic device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarising coating of the electronic device, heating the coated device to a temperature of 200 to 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic silicon nitrogen-containing coating, and (III) applying to the ceramic coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane or mixture thereof in the vapor phase, at a temperature between 200 and 600°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon obtained.
Claim 16
Dependent Claim
286 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) Coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminium alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and a metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the planarizing coating of the electronic device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarising coating of the electronic device, heating the coated device to a temperature of 200 to 1000°C. in an inert or ammonia-containing atmosphere to produce a ceramic silicon nitrogen-containing coating, and (III) applying to the ceramic coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane or mixture thereof in the vapor phase, at a temperature between 200 and 600°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon obtained.
Claim 17
Dependent Claim
284 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating with process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, heating the coated device to a temperature between 200 and 1000°C. in an inert or ammonia-containing atmosphere to produce a silicon nitrogen-containing coating, and (III) applying to the coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane or mixture thereof, and ammonia, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 18
Dependent Claim
284 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating with process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, heating the coated device to a temperature between 200 and 1000°C. in an inert or ammonia-containing atmosphere to produce a silicon nitrogen-containing coating, and (III) applying to the coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane or mixture thereof, and ammonia, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 19
Dependent Claim
300 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the planarizing coating of the electronic device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, heating the coated device to a temperature between 200 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing coating, and (III) applying to the coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 20
Dependent Claim
300 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the planarizing coating of the electronic device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, heating the coated device to a temperature between 200 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing coating, and (III) applying to the coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 200 and 1000°C., in the presence of the coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 21
Dependent Claim
278 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, heating the coated device to a temperature between 200 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing coating, and (III) applying to the coated device a silicon carbon nitrogen-containing coating by means of chemical vapor deposition of hexamethyldisilazane, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 22
Dependent Claim
278 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, heating the coated device to a temperature between 200 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing coating, and (III) applying to the coated device a silicon carbon nitrogen-containing coating by means of chemical vapor deposition of hexamethyldisilazane, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 23
Dependent Claim
281 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, heating the coated device to a temperature between 200 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing passivating coating, and (III) applying to the passivating coating a silicon carbon nitrogen-containing coating by means of plasma enhanced chemical vapor deposition of hexamethyldisilazane, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 24
Dependent Claim
281 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, heating the coated device to a temperature between 200 and 1000°C. in an inert or ammonia-containing atmosphere to produce the ceramic or ceramic-like silicon nitrogen-containing passivating coating, and (III) applying to the passivating coating a silicon carbon nitrogen-containing coating by means of plasma enhanced chemical vapor deposition of hexamethyldisilazane, at a temperature between 200 and 1000°C., in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 25
Dependent Claim
240 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, and heating the coated device to a temperature between 200 and 400°C. in an inert or ammonia-containing atmosphere to produce a passivating silicon nitrogen-containing coating, thereby producing a dual layer, ceramic or ceramic-like coating on the electronic device.
Claim 26
Dependent Claim
240 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting with a solvent a preceramic mixture of hydrogen silsesquioxane resin and a metal oxide precursor selected from the group consisting of an aluminum alkoxide, titanium alkoxide, and zirconium alkoxide, and applying the diluted preceramic mixture solution to an electronic device; (B) drying the diluted preceramic mixture solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device; (C) ceramifying the preceramic coating to silicon dioxide and metal oxide by heating the coated device to a temperature between 200 and 1000°C. to produce the ceramic or ceramic-like planarizing coating; and (II) applying to the planarizing coating of the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the planarizing coating of the electronic device, and heating the coated device to a temperature between 200 and 400°C. in an inert or ammonia-containing atmosphere to produce a passivating silicon nitrogen-containing coating, thereby producing a dual layer, ceramic or ceramic-like coating on the electronic device.
Claim 27
Independent Claim
116 words
A method of coating a substrate with a ceramic or cermic-like silicon nitrogen-containing material, wherein said method comprises the steps of: (1) diluting with a solvent a silicon and nitrogen-containing preceramic polymer produced by contacting a cyclic silazane or a mixture of cyclic silazanes with a silicon-containing material selected from the group consisting of halodisilanes and halosilanes; (2) coating a substrate with the diluted preceramic polymer solvent solution; (3) drying the diluted preceramic polymer solvent solution in the absence of air so as to evaporate the solvent and thereby deposit a preceramic polymer coating on the substrate; and (4) heating the coated substrate in the absence of air to produce the ceramic or ceramic-like coated substrate.
Claim 28
Independent Claim
116 words
A method of coating a substrate with a ceramic or cermic-like silicon nitrogen-containing material, wherein said method comprises the steps of: (1) diluting with a solvent a silicon and nitrogen-containing preceramic polymer produced by contacting a cyclic silazane or a mixture of cyclic silazanes with a silicon-containing material selected from the group consisting of halodisilanes and halosilanes; (2) coating a substrate with the diluted preceramic polymer solvent solution; (3) drying the diluted preceramic polymer solvent solution in the absence of air so as to evaporate the solvent and thereby deposit a preceramic polymer coating on the substrate; and (4) heating the coated substrate in the absence of air to produce the ceramic or ceramic-like coated substrate.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.