Patent EP0269439A2 successfully refreshed from Google Patents.
EP0269439A2
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A heteroepitaxial growth method
Assignee: Sharp Corp
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Filing: 1987-11-25
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Granted: —
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Expires: 2007-11-25
Abstract
Abstract A heteroepitaxial growth method comprising growing a semiconductor single-crystal film (8) on a semiconductor single-crystal substrate (A) with a lattice constant (a1) different from that (b1) of the semiconductor single-crystal film (B) by chemical vapor deposition, the epitaxial orientation of the semiconductor single-crystal film (B) being inclined at a certain angle (1°-30°) with respect to the semiconductor single-crystal substrate (A).
Inventors
- 👤 Mitsuhiro Shigeta
- 👤 Akira Suzuki
- 👤 Katsuki Furukawa
- 👤 Yoshihisa Fujii
- 👤 Akitsugu Hatano
- 👤 Atsuko Uemoto
- 👤 Kenji Nakanishi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 09:45
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S148/00; Y10S148/029; Y10S148/072; Y10S148/097; Y10S148/148; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
77 words
A heteroepitaxial growth method for the growth of a semiconductor single-crystal film (B) on a semiconductor single-crystal substrate (A) with a lattice constant (a1) different from that (b1) of said semiconductor single-crystal film (B), wherein said method comprises growing said semiconductor single-crystal film (B) on said semiconductor single-crystal substrate (A) by chemical vapor deposition, the epitaxial orientation of said semiconductor single-crystal film (B) being inclined at a certain angle with respect to said semiconductor single-crystal substrate (A).
Claim 2
Dependent Claim
77 words
A heteroepitaxial growth method for the growth of a semiconductor single-crystal film (B) on a semiconductor single-crystal substrate (A) with a lattice constant (a1) different from that (b1) of said semiconductor single-crystal film (B), wherein said method comprises growing said semiconductor single-crystal film (B) on said semiconductor single-crystal substrate (A) by chemical vapor deposition, the epitaxial orientation of said semiconductor single-crystal film (B) being inclined at a certain angle with respect to said semiconductor single-crystal substrate (A).
Claim 3
Dependent Claim
36 words
A heteroepitaxial growth method according to claim 1, wherein said inclination of the epitaxial orientation of said semiconductor single-crystal film (B) to said semiconductor single-crystal substrate (A) is in the range of 0.1 to 30 degrees.
Claim 4
Dependent Claim
28 words
A heteroepitaxial growth method according to claim 1, wherein said semiconductor single-crystal substrate (A) is composed of Si and said semiconductor single-crystal film (B) is composed of SiC.
Claim 5
Dependent Claim
35 words
A heteroepitaxial growth method according to claim 3, wherein said semiconductor single-crystal film (B) is grown on the (n11) plane of said semiconductor single-crystal substrate (A), wherein n is a natural number other than 1.
Claim 6
Dependent Claim
14 words
A heteroepitaxial growth method according to claim 4, wherein n is 3 to 6.
Claim 7
Dependent Claim
57 words
A heterostructure composed of a semiconductor single-crystal substrate (A) and a semiconductor single-crystal layer (B) with a lattice constant different from that of said substrate (A) that is epitaxially formed on said substrate (A), the epitaxial orientation of said semiconductor single-crystal layer (8) being inclined at a certain angle with respect to said semiconductor single-crystal substrate (A).
Claim 8
Dependent Claim
57 words
A heterostructure composed of a semiconductor single-crystal substrate (A) and a semiconductor single-crystal layer (B) with a lattice constant different from that of said substrate (A) that is epitaxially formed on said substrate (A), the epitaxial orientation of said semiconductor single-crystal layer (8) being inclined at a certain angle with respect to said semiconductor single-crystal substrate (A).
Claim 9
Dependent Claim
26 words
A heterostructure according to claim 8, wherein said semiconductor single-crystal substrate (A) is composed of Si and said semiconductor single-crystal layer (B) is composed of SiC.
Claim 10
Dependent Claim
34 words
A heterostructure according to claim B, wherein the inclination of the epitaxial orientation of said semiconductor single-crystal layer (B) to said semiconductor single-crystal substrate (A) is in the range of 1 to 30 degrees.
References Cited (Backward Citations)
No citation records indexed.
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