Patent EP0269112A2 successfully refreshed from Google Patents.
EP0269112A2
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EP
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Method of forming a thin crystalline metal film
Assignee: Nissin Electric Co Ltd
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Filing: 1987-11-26
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Granted: —
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Expires: 2007-11-26
Abstract
Abstract A method for depositing a thin metal film in a vacuum on a surface of a substrate which comprises the steps of: (a) irradiating the surface of the substrate with a beam of ions of an inert gas or a metal, having a kinetic energy ranging from 100 eV to 1,000 eV; and (b) depositing vaporized metal on the surface of the substrate, in which the ratio of the amount of ions irradiating the surface to the amount of vapor deposited on the surface ranges from about 0.5% to 30% and wherein the temperature of the substrate ranges from about room temperature to 500 DEG C. n
Inventors
- 👤 Yasunori C/O Nissin Electric Co. Ltd. Ando
- 👤 Kiyoshi C/O Nissin Electric Co. Ltd. Ogata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:07
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
107 words
A method for forming a thin metal film in a vacuum on a surface of a substrate, said method comprising the steps of: irradiating said surface of said substrate with a beam of ions of an inert gas or a metal, said ions having a kinetic energy ranging from 100 eV to 1,000 eV; and depositing vaporized said metal on said surface of said substrate wherein the ratio of the amount of said ions irradiating said surface to the amount of vapor deposited on said surface ranges from about 0.005 to 0.3 and wherein the temperature of said substrate ranges from about a room temperature to 500°C.
Claim 2
Independent Claim
107 words
A method for forming a thin metal film in a vacuum on a surface of a substrate, said method comprising the steps of: irradiating said surface of said substrate with a beam of ions of an inert gas or a metal, said ions having a kinetic energy ranging from 100 eV to 1,000 eV; and depositing vaporized said metal on said surface of said substrate wherein the ratio of the amount of said ions irradiating said surface to the amount of vapor deposited on said surface ranges from about 0.005 to 0.3 and wherein the temperature of said substrate ranges from about a room temperature to 500°C.
Claim 3
Dependent Claim
42 words
A method for forming a thin metal film as claimed in Claim 1, wherein said metal is selected from the group comprising Al, Ti, V, Cr, Mn, Fe, Cu, Co, Ni, Zr, Nb, Mo, Hf, Ta, W, Au, Ag, In and Sn.
Claim 4
Dependent Claim
27 words
A method for forming a thin metal film as claimed in Claim 1, wherein said inert gas is selected from the group comprising Ne, Ar and he.
Claim 5
Dependent Claim
22 words
A method for forming a thin metal film as claimed in Claim 1, wherein said irradiating and depositing steps are formed simultaneously.
Claim 6
Dependent Claim
26 words
A method for forming a thin metal film as claimed in Claim 1, wherein said temperature of said substrate ranges from about room temperature to 300°C.
References Cited (Backward Citations)
No citation records indexed.
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