Patent EP0268859A2 successfully refreshed from Google Patents.
EP0268859A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of dividing semiconductor wafers
Assignee: Toshiba Corp
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Filing: 1987-10-27
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Granted: —
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Expires: 2007-10-27
Abstract
Abstract A method for manufacturing a semiconductor device includes a step of forming a plurality of semiconductor pellets in substantially a matrix form in a semiconductor wafer (13) and processing the same. A group of large-sized semiconductor pellets (12) are formed in a matrix form in the central area of a semiconductor wafer (13) and a group of small-sized semiconductor pellets (14) are formed in an area between the periphery of the semiconductor wafer (13) and the group of large-sized semiconductor pellets (12) which is not used in the prior art, thus forming the semiconductor pellets (12 and 14) of different sizes in the semiconductor wafer (13). First, a dicing operation is effected to separate the large-sized semiconductor pellets (12) from the small-sized semiconductor pellets (14) and then each group of the large- and small-sized semiconductor pellets (12 and 14) is diced into individual semiconductor pellets.
Inventors
- 👤 Fumio C/O Patent Division Tokioka
- 👤 Masaaki C/O Patent Division Iwanishi
- 👤 Keizo C/O Patent Division Tani
- 👤 Junichi C/O Patent Division Nakao
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 19:30
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; H; H10; H10P; H10P52/00; H10P54/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
117 words
A method for manufacturing a semiconductor device by forming a plurality of semiconductor pellets in substantially a matrix form and processing the same, characterized by comprising a wafer processing step of arranging a group of large-sized semiconductor pellets (12) in substantially a matrix form in a central area of a semiconductor wafer (13) and a group of small-sized semiconductor pellets (14) in an area between the periphery of said semiconductor wafer (13) and said large-sized semiconductor pellets (12), thus forming different types of semiconductor pellets in said semiconductor wafer (13); and a wafer dicing step of dicing said semiconductor wafer (13) and dividing said semiconductor pellets (12 and 14) from one another for each semiconductor pellet group.
Claim 2
Independent Claim
117 words
A method for manufacturing a semiconductor device by forming a plurality of semiconductor pellets in substantially a matrix form and processing the same, characterized by comprising a wafer processing step of arranging a group of large-sized semiconductor pellets (12) in substantially a matrix form in a central area of a semiconductor wafer (13) and a group of small-sized semiconductor pellets (14) in an area between the periphery of said semiconductor wafer (13) and said large-sized semiconductor pellets (12), thus forming different types of semiconductor pellets in said semiconductor wafer (13); and a wafer dicing step of dicing said semiconductor wafer (13) and dividing said semiconductor pellets (12 and 14) from one another for each semiconductor pellet group.
Claim 3
Dependent Claim
22 words
A method according to claim 1, characterized in that said wafer dicing step includes a photo-etching step using a glass mask (11).
Claim 4
Dependent Claim
76 words
A method according to claim 1, characterized in that said dicing step is effected by first dicing said semiconductor wafer (13) to separate said group of large-sized semiconductor pellets (12) from said group of small-sized semiconductor pellets (14), and then dividing said group of large-sized semiconductor pellets (12) into individual large-sized semiconductor pellets (12) and said group of small-sized semiconductor pellets (14) in the peripheral portion of said semiconductor wafer (13) into individual small-sized semiconductor pellets(14).
Claim 5
Dependent Claim
31 words
A method according to claim 3, characterized in that said group of small-sized semiconductor pellets (14) are attached to a dicer cutting tape (16) and then divided into individual semiconductor pellets.
Claim 6
Dependent Claim
40 words
A method according to claim 1, characterized in that said group of large-sized semiconductor pellets (12) and said group of small-sized semiconductor pellets (14) are so arranged as to be diced by commonly using at least one of dicing lines.
Claim 7
Dependent Claim
27 words
A method according to claim 1, characterized in that said wafer processing step includes the same processing step for forming said large- and small-sized semiconductor pellets (14).
Claim 8
Dependent Claim
32 words
A method according to claim 1, characterized in that said large-sized semiconductor pellets (12) have large power transistors formed therein and said small-sized semiconductor pellets (14) have small power transistors formed therein.
Claim 9
Dependent Claim
25 words
A method according to claim 1, characterized by further comprising a step of performing function test for said semiconductor pellets after said wafer dicing step.
References Cited (Backward Citations)
No citation records indexed.
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