Patent EP0267730A2 successfully refreshed from Google Patents.
EP0267730A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Tungsten metallization
Assignee: AT&T Inc
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Filing: 1987-11-04
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Granted: —
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Expires: 2007-11-04
Abstract
Abstract Prior to depositing tungsten (7) on a silicon surface (1) at least partially covered with a dielectric (3), a glue layer (5) of aluminum or a conducting nitride is deposited. The glue layer improves the adhesion of tungsten to the underlying dielectric layer.
Inventors
- 👤 Lowell Henry Holschwandner
- 👤 Virendra Vir Singh Rana
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 03:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/042; H10W20/045; H10W20/056
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
59 words
A method of fabricating an integrated circuit comprising the steps of: depositing tungsten over a silicon surface, at least a portion of said surface being covered with a dielectric, said tungsten covering said dielectric, depositing a glue layer before depositing said tungsten, CHARACTERISED IN THAT said glue layer comprises at least one member selected from Al and conducting nitrides.
Claim 2
Independent Claim
59 words
A method of fabricating an integrated circuit comprising the steps of: depositing tungsten over a silicon surface, at least a portion of said surface being covered with a dielectric, said tungsten covering said dielectric, depositing a glue layer before depositing said tungsten, CHARACTERISED IN THAT said glue layer comprises at least one member selected from Al and conducting nitrides.
Claim 3
Dependent Claim
20 words
A method as recited in claim 1 further CHARACTERISED BY the step of patterning said dielectric layer to form holes.
Claim 4
Dependent Claim
17 words
A method as recited in claim 2, CHARACTERISED IN THAT said holes expose an electrically conducting material.
Claim 5
Dependent Claim
16 words
A method as recited in claim 3, CHARACTERISED IN THAT said material comprises said silicon surface.
Claim 6
Dependent Claim
16 words
A method as recited in claim 3, CHARACTERISED IN THAT said material comprises a metallic silicide.
Claim 7
Dependent Claim
31 words
A method as recited in claim 3, further CHARACTERISED BY etching said tungsten and said glue layer to form a planar surface of said dielectric and said tungsten in said hole.
Claim 8
Dependent Claim
15 words
A method as recited in claim 1, CHARACTERISED IN THAT said dielectric comprises silicon dioxide.
Claim 9
Dependent Claim
20 words
A method as recited in claim 1 further CHARACTERISED BY the step of patterning said tungsten and said glue layer.
References Cited (Backward Citations)
No citation records indexed.
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