Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
63 words
An optically bistable photodiode device, comprising a photodiode (101,201) in which the absorption of light is changed in accordance with a voltage applied thereacross, characterised by a circuit (102,202) for detecting and amplifying photocurrent flowing through the photodiode (101,201) and a circuit (103,203) for controlling the voltage applied across the photodiode in accordance with the output of the circuit for detecting and amplifying.
Claim 2
Dependent Claim
63 words
An optically bistable photodiode device, comprising a photodiode (101,201) in which the absorption of light is changed in accordance with a voltage applied thereacross, characterised by a circuit (102,202) for detecting and amplifying photocurrent flowing through the photodiode (101,201) and a circuit (103,203) for controlling the voltage applied across the photodiode in accordance with the output of the circuit for detecting and amplifying.
Claim 3
Dependent Claim
38 words
An optically bistable photodiode device according to claim 1, characterised by a common substrate (100,200) on which the photodiode (101,201), the circuit (102,202) for detecting and amplifying, and the circuit (103,203) for controlling the applied voltage are provided.
Claim 4
Dependent Claim
44 words
An optically bistable photodiode device according to claim 1 or 2, characterised in that the photodiode (101,201) includes a multiple quantum well (12,22) and p and n-cladding layers (13 and 11, 23 and 21) provided on the respective surfaces of the multiple quantum well.
Claim 5
Dependent Claim
92 words
An optically bistable photodiode device according to claim 2, characterised in that the common substrate (100) is a semi-insulating substrate of GaAs, and in that the circuit (102) for detecting and amplifying includes a resistor (121) and a transistor (122), the resistor being connected to the p-electrode (15) of the photodiode (101) and the gate electrode of the transistor, the transistor being connected at its collector to the circuit (103) for controlling the applied voltage, and the circuit for controlling the applied voltage being connected to the n-electrode (14) of the photodiode.
Claim 6
Dependent Claim
113 words
An optically bistable photodiode device according to claim 2, characterised in that the common substrate (200) is a semi-insulating substrate of InP, in that the circuit (202) for detecting and amplifying includes a resistor (221) and a pair of transistors (224, 225), the resistor being connected to the p-electrode (25) of the photodiode (201) and the gate electrode of one of the transistors (224), the other transistor (225) being connected at its emitter to the emitter of the said one transistor and being connected at its collector to the circuit (203) for controlling the applied voltage, and the circuit for controlling the applied voltage being connected to the n-electrode (24) of the photodiode.