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EP0260988A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

An optically bistable photodiode device

Assignee: NEC Corp
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Filing: 1987-09-18
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Granted: —
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Expires: 2007-09-18
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Abstract

Abstract The optically bistable photodiode device comprises a photo­diode (101) in which the absorption of light is changed in accordance with a voltage to be applied thereacross, a circuit (102) for amplifying the photocurrent flowing through the photodiode, and a bias circuit (103) for controlling the voltage to be applied across the photodiode. The incident light supplied to the photodiode is chosen to have a wavelength at which a resonance is produced in an exciton absorption or bandedge absorption where an electric field applied across a multiple quantum well (12) is low so that a optically bistable operation is performed with a high speed response and low power consumption.

Inventors

  • 👤 Akira C/O Nec Corporation Suzuki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-07 07:18
CPC Classifications
G; G02; G02F; G02F3/00; G02F3/02; G02F3/028; B; B82; B82Y; B82Y20/00; G02F1/00; G02F1/01; G02F1/015; G02F1/017

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 63 words
An optically bistable photodiode device, comprising a photodiode (101,201) in which the absorption of light is changed in accordance with a voltage applied thereacross, characterised by a circuit (102,202) for detecting and amplifying photocurrent flowing through the photodiode (101,201) and a circuit (103,203) for controlling the voltage applied across the photodiode in accordance with the output of the circuit for detecting and amplifying.
Claim 2
Dependent Claim 63 words
An optically bistable photodiode device, comprising a photodiode (101,201) in which the absorption of light is changed in accordance with a voltage applied thereacross, characterised by a circuit (102,202) for detecting and amplifying photocurrent flowing through the photodiode (101,201) and a circuit (103,203) for controlling the voltage applied across the photodiode in accordance with the output of the circuit for detecting and amplifying.
Claim 3
Dependent Claim 38 words
An optically bistable photodiode device according to claim 1, characterised by a common substrate (100,200) on which the photodiode (101,201), the circuit (102,202) for detecting and amplifying, and the circuit (103,203) for controlling the applied voltage are provided.
Claim 4
Dependent Claim 44 words
An optically bistable photodiode device according to claim 1 or 2, characterised in that the photodiode (101,201) includes a multiple quantum well (12,22) and p and n-cladding layers (13 and 11, 23 and 21) provided on the respective surfaces of the multiple quantum well.
Claim 5
Dependent Claim 92 words
An optically bistable photodiode device according to claim 2, characterised in that the common substrate (100) is a semi-insulating substrate of GaAs, and in that the circuit (102) for detecting and amplifying includes a resistor (121) and a transistor (122), the resistor being connected to the p-electrode (15) of the photodiode (101) and the gate electrode of the transistor, the transistor being connected at its collector to the circuit (103) for controlling the applied voltage, and the circuit for controlling the applied voltage being connected to the n-electrode (14) of the photodiode.
Claim 6
Dependent Claim 113 words
An optically bistable photodiode device according to claim 2, characterised in that the common substrate (200) is a semi-insulating substrate of InP, in that the circuit (202) for detecting and amplifying includes a resistor (221) and a pair of transistors (224, 225), the resistor being connected to the p-electrode (25) of the photodiode (201) and the gate electrode of one of the transistors (224), the other transistor (225) being connected at its emitter to the emitter of the said one transistor and being connected at its collector to the circuit (203) for controlling the applied voltage, and the circuit for controlling the applied voltage being connected to the n-electrode (24) of the photodiode.

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