Patent EP0260906A2 successfully refreshed from Google Patents.
EP0260906A2
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Method of producing semiconductor device and semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1987-09-14
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Granted: —
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Expires: 2007-09-14
Abstract
Abstract A method of producing a semiconductor device comprising the steps of depositing an alloy film (14) including copper (Cu) on a substrate (10,12), patterning the alloy film, and annealing the patterned alloy film in an ambient atmosphere including at least nitrogen (N2) gas, so that a copper interconnection film (18) covered by a nitride film (16) is formed.
Inventors
- 👤 Kazuhiro Hoshino
- 👤 Minoru Inoue
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 17:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10P; H10P95/00; H10W20/01; H10W20/031; H10W20/063; H10W20/064; H10W20/065; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
60 words
A method of producing a semiconductor device characterized in that said method comprises the steps of depositing an alloy film (14) including copper (Cu) on a substrate, patterning said alloy film, and annealing said patterned alloy film in an ambient atmosphere including nitrogen (N₂) gas, so that a copper interconnection film (18) covered by a nitride film (16) is formed.
Claim 2
Independent Claim
60 words
A method of producing a semiconductor device characterized in that said method comprises the steps of depositing an alloy film (14) including copper (Cu) on a substrate, patterning said alloy film, and annealing said patterned alloy film in an ambient atmosphere including nitrogen (N₂) gas, so that a copper interconnection film (18) covered by a nitride film (16) is formed.
Claim 3
Dependent Claim
45 words
A method of producing a semiconductor device as claimed in claim 1, characterized in that said alloy film is made of an alloy of Cu and a material selected from the group consisting of titanium (Ti), zirconium (Zr), aluminum (Al), boron (B) and silicon (Si).
Claim 4
Independent Claim
29 words
A method of producing a semiconductor device as claimed in any of claims 1 and 2, characterized in that said step of annealing is performed at a reduced pressure.
Claim 5
Independent Claim
32 words
A method of producing a semiconductor device as claimed in any of claims 1 to 3, characterized in that said step of annealing is performed at a temperature of 600 to 900°C.
Claim 6
Independent Claim
33 words
A method of producing a semiconductor device as claimed in any of claims 1 to 4, characterized in that said step of annealing is performed for tens of minutes to a few hours.
Claim 7
Independent Claim
30 words
A method of producing a semiconductor device as claimed in any of claims 1 to 5, characterized in that the thickness of said nitride film ranges from 500Å to 1,000Å.
Claim 8
Independent Claim
27 words
A method of producing a semiconductor device as claimed in any of claims 1 to 6, characterized in that said ambient atmosphere is gas including N atoms.
Claim 9
Independent Claim
41 words
A method of producing a semiconductor device as claimed in any of claims 1 to 6, characterized in that said ambient atmosphere is a gas including N atoms and a gas selected from the group including algon (Ar) and ammonia (NH₃).
Claim 10
Independent Claim
45 words
A method of producing a semiconductor device as claimed in any of claims 1 to 8, characterized in that said nitride is a material selected from the group including titanium nitride (TiN), zirconium nitride (ZrN), aluminum nitride (AlN), boron nitride (BN) and silicon nitride (Si₃N₄).
Claim 11
Independent Claim
36 words
A method of producing a semiconductor device as claimed in any of claims 1 to 9, characterized in that said substrate includes a metallic film (12) deposited on an insulating film (10) on a silicon substrate.
Claim 12
Independent Claim
43 words
A method of producing a semiconductor device as claimed in any of claims 1 to 10, characterized in that said step of depositing said alloy film is performed by a direct current magnetron sputtering in which an alloy including Cu target is sputtered.
Claim 13
Independent Claim
62 words
A method of producing a semiconductor device as claimed in any of claims 1 to 10, characterized in that said step of depositing said alloy is performed by depositing a bilayer film consisting of a Cu film (14a) and a metallic material (14b) which is alloyed with said Cu film on said substrate in that order and by annealing said bilayer film.
Claim 14
Independent Claim
30 words
A method of producing a semiconductor device as claimed in any of claims 1 to 12, characterized in that the thickness of said alloy film ranges from 3,000Å to 2µm.
Claim 15
Independent Claim
37 words
A method of producing a semiconductor device as claimed in any of claims 1 to 13, characterized in that a metallic material other than Cu is included as 1 to 20 weight % in said alloy film.
Claim 16
Independent Claim
31 words
A method of producing a semiconductor device as claimed in any of claims 1 to 14, characterized in that said step of patterning is carried out by an ion milling method.
Claim 17
Independent Claim
39 words
A method of producing a semiconductor device as claimed in any of claims 1 to 15, characterized in that said method further comprises a step of depositing an insulating film on said Cu interconnection film covered by said nitride.
Claim 18
Independent Claim
34 words
A method of producing a semiconductor device as claimed in any of claims 1 to 16, characterized in that said deposition of said insulating film is carried out by a chemical vapor deposition (CVD).
Claim 19
Dependent Claim
70 words
A semiconductor device characterized in that said device comprises a substrate (10, 12); a copper interconnection film (18) deposited on said substrate; and a nitride film (16) covering said copper film, wherein said copper film and said nitride film are formed by depositing an alloy film (14) including copper on said substrate, patterning said alloy film, and annealing said patterned alloy film in an ambient atmosphere including nitrogen (N₂) gas.
Claim 20
Dependent Claim
70 words
A semiconductor device characterized in that said device comprises a substrate (10, 12); a copper interconnection film (18) deposited on said substrate; and a nitride film (16) covering said copper film, wherein said copper film and said nitride film are formed by depositing an alloy film (14) including copper on said substrate, patterning said alloy film, and annealing said patterned alloy film in an ambient atmosphere including nitrogen (N₂) gas.
Claim 21
Dependent Claim
41 words
A semiconductor device as claimed in claim 18, characterized in that said nitride film is made of a material selected from the group consisting of titanium nitride (TiN), zirconium nitride (ZrN), aluminum nitride (AlN), boron nitride (BN) and silicon nitride (Si₃N₄).
Claim 22
Dependent Claim
54 words
A semiconductor device as claimed in any of claims 18 and 19, characterized in that said substrate is made up of a silicon substrate, an insulating film (10) deposited on said silicon substrate and a diffusion barrier metal film (12) for preventing reaction and interdiffusion between copper and silicon, deposited on said insulating film.
Claim 23
Dependent Claim
57 words
A semiconductor device as claimed in any of claims 18 to 20, characterized in that said diffusion barrier metal film is made of a material selected from the group consisting of titanium nitride (TiN), tungsten (W), tungsten nitride (WN), zirconium nitride (ZrN), titanium carbide (TiC), tungsten carbide (WC), tantalum (Ta), tantalum nitride (TiN) and titanium tungsten (TiW).
Claim 24
Dependent Claim
28 words
A semiconductor device as claimed in any of claims 18 to 21, characterized in that an insulating film is deposited on said copper film covered by the nitride.
Claim 25
Independent Claim
67 words
A method of producing a semiconductor device characterized in that said method comprises the steps of depositing a copper interconnection film (56) on a substrate (50, 52, 54); patterning said copper interconnection film; depositing a nitride film (58) on said copper film and said substrate; and etching off said nitride film that is not part of said nitride film deposited on surfaces of said patterned copper film.
Claim 26
Independent Claim
67 words
A method of producing a semiconductor device characterized in that said method comprises the steps of depositing a copper interconnection film (56) on a substrate (50, 52, 54); patterning said copper interconnection film; depositing a nitride film (58) on said copper film and said substrate; and etching off said nitride film that is not part of said nitride film deposited on surfaces of said patterned copper film.
Claim 27
Dependent Claim
32 words
A method of producing a semiconductor device as claimed in claim 23, characterized in that said step of depositing said copper film is carried out by a direct current magnetron sputtering method.
Claim 28
Independent Claim
35 words
A method of producing a semiconductor device as claimed in any of claims 23 and 24, characterized in that said step of depositing said nitride film is carried out by a reactive magnetron sputtering method.
Claim 29
Independent Claim
33 words
A method of producing a semiconductor device as claimed in any of claims 23 to 25, characterized in that said step of patterning said copper film is performed by an ion milling method.
Claim 30
Independent Claim
32 words
A method of producing a semiconductor device as claimed in any of claims 23 to 26, characterized in that said step of etching off is performed by a reactive ion etching method.
Claim 31
Dependent Claim
80 words
A semiconductor device characterized in that said device comprises a silicon substrate (50); an insulating film (52) deposited on said silicon substrate; a barrier metal film (54) for preventing reaction and interdiffusion between copper and silicon, deposited on said insulating film; a copper interconnection film (56) deposited on said barrier metal film; a nitride film (58) covering top and side surfaces of said copper film; and another insulating film (62) deposited on said copper film covered by said nitride film.
Claim 32
Dependent Claim
80 words
A semiconductor device characterized in that said device comprises a silicon substrate (50); an insulating film (52) deposited on said silicon substrate; a barrier metal film (54) for preventing reaction and interdiffusion between copper and silicon, deposited on said insulating film; a copper interconnection film (56) deposited on said barrier metal film; a nitride film (58) covering top and side surfaces of said copper film; and another insulating film (62) deposited on said copper film covered by said nitride film.
Claim 33
Dependent Claim
41 words
A semiconductor device as claimed in claim 28, characterized in that said nitride film is made of a material selected from the group consisting of titanium nitride (TiN), zirconium nitride (ZrN), aluminum nitride (AlN), boron nitride (BN) and silicon nitride (Si₃N₄).
References Cited (Backward Citations)
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