Chemical vapor deposition reactor and method of chemical vapor deposition

Claim 2

A chemical vapor deposition system for depositing a reactant from a flowing reactant gas introduced into a reactant chamber on a substrate mounted on a susceptor in said chamber comprising: a) a reaction chamber (10, 12) for heating reacting gases with a pair of opposing heatable susceptors (24) to deposit a reactant from said gases on said substrate; and b) said susceptors (24) each adapted to have substrates (100) mounted thereon for deposition of said reactant thereon, the ratio of the lateral width of said susceptors (24) to the distance between said opposing susceptors being greater than one.

Claim 3

Apparatus for heating gases in a chamber to obtain a reaction comprising: a) a reaction chamber (10, 12) for heating reacting gases with a heated susceptor (24) and wherein the reacting gases flow in a vertical direction from a lower inlet port (44) to a higher outlet port (56, 58) past said susceptor; b) a substrate (100) mounted on a surface of said susceptor (24) and having an exposed surface parallel to the vertical flow of gases upon which reactants from the reacting gases are deposited by chemical vapor deposition; c) rotator means (130, 134) for rotating said susceptor (24) and said substrate (100) about an axis transverse the vertical direction of flow of the reactant gases through a reaction region opposite the susceptor surface.

Claim 4

Apparatus for heating gases in a chamber to obtain a reaction comprising: a) a reaction chamber (10, 12) for heating reacting gases with a heated susceptor (24) and wherein the reacting gases flow in a vertical direction from a lower inlet port (44) to a higher outlet port (56, 58) past said susceptor; b) a substrate (100) mounted on a surface of said susceptor (24) and having an exposed surface parallel to the vertical flow of gases upon which reactants from the reacting gases are deposited by chemical vapor deposition; c) rotator means (130, 134) for rotating said susceptor (24) and said substrate (100) about an axis transverse the vertical direction of flow of the reactant gases through a reaction region opposite the susceptor surface.

Claim 5

The system according to claim 1, including c) rotator means (130, 134) for rotating at least the susceptor (24) with the substrate (100) about an axis transverse the flow of reactant gases; and d) exhaust means (54-58) for exhausting reactant gases.

Claim 6

The system according to claim 1, 2 or 3, including access means (86) for loading and unloading the susceptor (24) with the substrate from said chamber (10, 12).

Claim 7

The system according to claim 4, wherein the access means (86) includes crane means (20) disposed adjacent one vertical end of said chamber (10, 12) for grasping the susceptor (24) to be removed.

Claim 8

The system according to claim 4, wherein the access means (86) includes means (20) disposed horizontally adjacent the space between substrates (100) for grasping the susceptor (24) to be removed.

Claim 9

The system according to claim 1, wherein the chamber (10, 12) is a vertical type chamber adapted for reactant gases to be introduced from below the susceptors (24) and to flow upwardly between the susceptors.

Claim 10

The system according to claim 1, wherein the chamber is a vertical type chamber adapted for reactant gases to be introduced from opposite sides of the chamber and to flow cross-wise between the two susceptors (24).

Claim 11

Reaction apparatus for chemical vapor deposition of heated reactants on substrates (100) comprising: a) an enclosed vertically extending envelope (16); b) a reaction zone (R in ) within said envelope wherein deposition of reactants on said substrates (100) occurs; one side of said zone (R in ) being formed by a first susceptor (24) upon which is mounted at least a first substrate (100) with a planar surface exposed to said reaction zone, and an opposite side of said zone being formed by a second susceptor (24) upon which is mounted at least a second substrate (100) with planar surface exposed to said reaction zone, the ratio of the width of said susceptors to the distance between opposite exposed substrate surfaces being greater than one.

Claim 12

Reaction apparatus for chemical vapor deposition of heated reactants on substrates (100) comprising: a) an enclosed vertically extending envelope (16); b) a reaction zone (R in ) within said envelope wherein deposition of reactants on said substrates (100) occurs; one side of said zone (R in ) being formed by a first susceptor (24) upon which is mounted at least a first substrate (100) with a planar surface exposed to said reaction zone, and an opposite side of said zone being formed by a second susceptor (24) upon which is mounted at least a second substrate (100) with planar surface exposed to said reaction zone, the ratio of the width of said susceptors to the distance between opposite exposed substrate surfaces being greater than one.

Claim 13

The apparatus according to claim 9, including means for rotating said susceptors (24) about an axis transverse to the flow of heated reactants in the said zone (R in ).

Claim 14

The apparatus according to claim 9 or claim 10, including means for loading and unloading said susceptors either from one vertical end of said envelope (16), or from one adjacent side of said envelope.

Claim 15

Reaction apparatus for chemical vapor deposition of reactants on a substrate comprising: a) an outer walled envelope (10) having an enclosing side wall structure (12) and two end walls (64, 66); b) an inner walled partition (16) within said envelope (10) defining an innermost region (R in ) between said inner walled partition wherein an upward flow of reactant gases is established; and c) at least one susceptor (24) disposed in the partition (16), with said substrate (100) mounted on said susceptor (24) and having an external surface exposed to said flow of reactant gases, the susceptor holding said substrate for rotational movement in the plane substantially parallel to the flow of reactant gases.

Claim 16

Reaction apparatus for chemical vapor deposition of reactants on a substrate comprising: a) an outer walled envelope (10) having an enclosing side wall structure (12) and two end walls (64, 66); b) an inner walled partition (16) within said envelope (10) defining an innermost region (R in ) between said inner walled partition wherein an upward flow of reactant gases is established; and c) at least one susceptor (24) disposed in the partition (16), with said substrate (100) mounted on said susceptor (24) and having an external surface exposed to said flow of reactant gases, the susceptor holding said substrate for rotational movement in the plane substantially parallel to the flow of reactant gases.

Claim 17

The chamber according to claim 12, wherein a drive mechanism (130, 134) for rotating the susceptor (24) is contained in an intermediate region (R int ) formed between the inner walled portion (16) and an outer walled portion (14) spaced from said outer walled envelope (10), means being provided to afford a flow of purge gases from one end of the intermediate region (R int ) to the other end.

Claim 18

A reactor for depositing material on a substrate comprising: a) an outer tubular envelope (12) having first and second opposing end plates (64,66), said envelope extending about a longitudinal axis; b) inner and outer reactant tubes (14, 16) extending in said longitudinal plane within said envelope (12) and coaxial to the longitudinal axis of said envelope; c) the longitudinal extended region between said outer reactor tube (14) and said envelope (12) comprising an exhaust region (R o ), the longitudinally extended region between said inner reactor tube (16) and said outer reactor tube (14) comprising a purge gas region (R int ) and the region (R in ) within said inner reactor tube (16) forming a reaction gas flow region; d) a pair of disc-like susceptors (24) disposed within said purge gas region (R int ) for holding pairs of substrates (24) with deposition surfaces of the substrates exposed to said reaction gas flow region (R in ) and aligned in a plane parallel to the axial plane of the envelope (12), the ratio of the outer diameter of said susceptors (24) to the distance between opposite deposition surfaces of said substrate being greater than one; and e) port means (44) for introducing reaction gas into said reaction gas region.

Claim 19

A reactor for depositing material on a substrate comprising: a) an outer tubular envelope (12) having first and second opposing end plates (64,66), said envelope extending about a longitudinal axis; b) inner and outer reactant tubes (14, 16) extending in said longitudinal plane within said envelope (12) and coaxial to the longitudinal axis of said envelope; c) the longitudinal extended region between said outer reactor tube (14) and said envelope (12) comprising an exhaust region (R o ), the longitudinally extended region between said inner reactor tube (16) and said outer reactor tube (14) comprising a purge gas region (R int ) and the region (R in ) within said inner reactor tube (16) forming a reaction gas flow region; d) a pair of disc-like susceptors (24) disposed within said purge gas region (R int ) for holding pairs of substrates (24) with deposition surfaces of the substrates exposed to said reaction gas flow region (R in ) and aligned in a plane parallel to the axial plane of the envelope (12), the ratio of the outer diameter of said susceptors (24) to the distance between opposite deposition surfaces of said substrate being greater than one; and e) port means (44) for introducing reaction gas into said reaction gas region.

Claim 20

The reactor according to claim 14, including drive means (130, 134) for rotating at least one of said susceptors (24) about an axis transverse the said longitudinal axis.

Claim 21

A reaction chamber for chemical vapor deposition of reactants from reactant gases on heated substrates comprising: a) an outer walled envelope (10) having an enclosed side wall (12) and two end walls (64, 66); b) an intermediate walled partition (14) within said envelope (10) defining an outermost region (R o ) between said intermediate partition (14) and said enclosing side wall (12) wherein reactant by-products are exhausted; c) an inner walled partition (16) within said intermediate partition (14) defining with said intermediate walled partition an intermediate region (R int ) between said intemediate partition (14) and said inner walled partition (16), the latter defining an innermost region (R in ) therein wherein a flow of reactant gases is established; d) at least two susceptors (24) disposed in the intermediate region (R int ), with said substrates (100) mounted on the susceptors and having an external surface exposed to said flow of reactant gases, the susceptors (24) holding said substrates (100) for rotational movement in a plane substantially parallel to the flow of reactant gases; and e) heater means (910) for heating the susceptors (24).

Claim 22

A reaction chamber for chemical vapor deposition of reactants from reactant gases on heated substrates comprising: a) an outer walled envelope (10) having an enclosed side wall (12) and two end walls (64, 66); b) an intermediate walled partition (14) within said envelope (10) defining an outermost region (R o ) between said intermediate partition (14) and said enclosing side wall (12) wherein reactant by-products are exhausted; c) an inner walled partition (16) within said intermediate partition (14) defining with said intermediate walled partition an intermediate region (R int ) between said intemediate partition (14) and said inner walled partition (16), the latter defining an innermost region (R in ) therein wherein a flow of reactant gases is established; d) at least two susceptors (24) disposed in the intermediate region (R int ), with said substrates (100) mounted on the susceptors and having an external surface exposed to said flow of reactant gases, the susceptors (24) holding said substrates (100) for rotational movement in a plane substantially parallel to the flow of reactant gases; and e) heater means (910) for heating the susceptors (24).

Claim 23

The chamber according to claim 16, wherein a drive mechanism (130, 134) for rotating said susceptors (24) is contained in the intermediate region (R int ) and means is provided to establish a flow of purge gases from one end of said region (R int ) to the other end.

Claim 24

A reactor for depositing semiconductor material on a substrate comprising: a) an outer tubular envelope (10) having first and second opposing end plates (64, 66), said envelope being adapted to be mounted in a longitudinally extending vertical plane; b) inner and outer reactant tubes (16, 14) extending in said longitudinal plane within said envelope (10) and coaxial to the longitudinal axis of said envelope; c) the longitudinally extended region between said outer reactor tube (14) and said envelope (10) comprising an exhaust region (R o ), the longitudinally extended region between said inner reactor tube (16) and said outer reactor tube (14) comprising a purge gas region (R int ) and the region within said inner reactor tube (16) forming a reaction gas flow region (R in ); and d) susceptor means (24) disposed within said purge gas region (R int ) for holding said substrate (100) with a deposition surface of said substrate exposed to said reaction gas flow region (R in ) and aligned in a plane parallel to the axial plane of the envelope (10).

Claim 25

A reactor for depositing semiconductor material on a substrate comprising: a) an outer tubular envelope (10) having first and second opposing end plates (64, 66), said envelope being adapted to be mounted in a longitudinally extending vertical plane; b) inner and outer reactant tubes (16, 14) extending in said longitudinal plane within said envelope (10) and coaxial to the longitudinal axis of said envelope; c) the longitudinally extended region between said outer reactor tube (14) and said envelope (10) comprising an exhaust region (R o ), the longitudinally extended region between said inner reactor tube (16) and said outer reactor tube (14) comprising a purge gas region (R int ) and the region within said inner reactor tube (16) forming a reaction gas flow region (R in ); and d) susceptor means (24) disposed within said purge gas region (R int ) for holding said substrate (100) with a deposition surface of said substrate exposed to said reaction gas flow region (R in ) and aligned in a plane parallel to the axial plane of the envelope (10).

Claim 26

The reactor according to claim 18, including means (130, 134) for rotating the susceptor means (24) about an axis transverse the gas flow in the reaction gase flow region (R in ).

Claim 27

The reactor according to claim 18 or claim 19, wherein the susceptor means comprises two separate discs (24, 918) having a circular periphery and the ratio of the diameter of the discs to the distance between adjacent substrates mounted on the discs is e.g. greater than 3, and optionally at least nine substrates (100) are mounted on each susceptor means (918).

Claim 28

The apparatus according to claim 18, 19 or 20, wherein the susceptor means (24) comprises a heatable disc (124) having a transverse bore (400) extending therethrough with an internal peripheral projection (112) at one end of the bore against which said substrate (100) is held by a plug (102) extending into said bore.

Claim 29

The apparatus according to claim 18, 19, 20 or 21, wherein said susceptor means (24) are cradled on a drive mechanism (130, 134) in the purge gas region (R int ) and including crane means (20) for grasping a plug (102) of the susceptor means (24) about the periphery of the plug for lowering and removing said susceptor means from the drive mechanism.

Claim 33

The method according to claim 24, further including the step of rotating the wafer mounted susceptor about an axis transverse the flow of reactants.

Claim 36

The method according to claim 26, further including the step of rotating the susceptors about an axis perpendicular to the flow of reactants.

Claim 37

A CVD system for depositing films from reacting gases on a substrate comprising: a) a vertical walled chimney-type reaction chamber (10) adapted for receiving and for heating reacting gases with heated susceptors (24) displaced from the chamber walls; b) a pair of wafers (100) mounted in the susceptors (24), one each on adjacent sides of said susceptors, the ratio of the width of said susceptors to the distance between opposite adjacent substrates being greater than one; c) rotator means (130, 134) for rotating the susceptors (24) about an axis transverse the flow of reacting gases; d) exhaust means (56, 58) for exhausting reactant gases; and e) access means for loading and unloading the susceptors from said chamber.

Claim 38

A CVD system for depositing films from reacting gases on a substrate comprising: a) a vertical walled chimney-type reaction chamber (10) adapted for receiving and for heating reacting gases with heated susceptors (24) displaced from the chamber walls; b) a pair of wafers (100) mounted in the susceptors (24), one each on adjacent sides of said susceptors, the ratio of the width of said susceptors to the distance between opposite adjacent substrates being greater than one; c) rotator means (130, 134) for rotating the susceptors (24) about an axis transverse the flow of reacting gases; d) exhaust means (56, 58) for exhausting reactant gases; and e) access means for loading and unloading the susceptors from said chamber.

Claim 39

The system according to claim 28 wherein the access means is disposed adjacent one vertical end of said chamber (10) for grasping the susceptors (24) through an interlock gate valve (40).

Claim 40

The system according to claim 28, wherein the access means is disposed horizontally adjacent the space between substrates for grasping the susceptors through a gate valve (40).

Claim 41

Reaction apparatus for chemical vapor deposition of heated reactants on a substrate surface comprising: a) an enclosed extended envelope; b) a reacton zone (R in ) within said envelope wherein reactant gas is heated by a pair of opposed susceptors (24), each having a planar wall surface facing the other susceptor and said heated gas flows in a path which is generally parallel to the planar opposed walls of said susceptors, one side of said zone being formed by a wall of a first susceptor (24) upon which is mounted at least a first substrate (100) with a planar surface exposed to said reaction zone, and an opposite side of said zone formed by a wall of a separate second susceptor (24); and c) rotator means (130, 134) for rotating said susceptors (24) about an axis transverse the flow of heated reactants.

Claim 42

Reaction apparatus for chemical vapor deposition of heated reactants on a substrate surface comprising: a) an enclosed extended envelope; b) a reacton zone (R in ) within said envelope wherein reactant gas is heated by a pair of opposed susceptors (24), each having a planar wall surface facing the other susceptor and said heated gas flows in a path which is generally parallel to the planar opposed walls of said susceptors, one side of said zone being formed by a wall of a first susceptor (24) upon which is mounted at least a first substrate (100) with a planar surface exposed to said reaction zone, and an opposite side of said zone formed by a wall of a separate second susceptor (24); and c) rotator means (130, 134) for rotating said susceptors (24) about an axis transverse the flow of heated reactants.

Claim 43

The apparatus according to claim 31, wherein the susceptors (24) are generally circular in shape and a plurality of wafers (100) are mounted on each susceptor.

Claim 44

The apparatus according to claim 31 or 32, wherein the ratio of the width of the susceptors to the distance between them is about 3 or greater, and optionally the distance between the susceptors is less than or equal to about one inch (2.54 cm) and optionally the lateral width of the susceptors is greater than about two inches (5.08 cm).

Claim 45

The apparatus according to claim 31, 32 or 33, wherein a diffuser plate (47) is provided adjacent the reaction zone (R in ) to enable a flow of reactant gases into the reaction zone which is initially greater at the outer extremities of the zone than at the central inner core thereof.

Claim 46

The apparatus according to claim 31, 32, 33 or 34, wherein the susceptor has an opening formed in a back wall thereof opposite the susceptor wall forming one side of said reaction zone, for receipt of the substrate (100).

Claim 47

A reactor for depositing semiconductor material on a substrate comprising: a) an outer tubular envelope (10) having first and second opposing end plates (64, 66), said envelope being adapted to be mounted in a longitudinally extending vertical plane; b) inner and outer reactant tubes (16, 14) extending in said longitudinal plane within said envelope (10) and coaxial to the longitudinal axis of said envelope; c) a longitudinally extended region between said outer reactor tube (14) and said envelope (10) comprising an exhaust region (R o ), a longitudinally extended region between the inner reactor tube (16) and said outer reactor tube (14) comprising a purge gas region (R int ) and the region within the inner reactor tube (16) forming a reaction gas flow region (R in ); d) susceptor means (24) disposed within said purge gas region (R int ) comprising a heatable disc (124) having a transverse bore (400) extending therethrough with an internal peripheral projection (112) at one end of the bore against which said substrate (100) is held by a plug (102) extending into said bore, such that, a deposition surface of said substrate (100) is exposed to said reaction gas flow region and aligned in a plane parallel to the axial plane of the envelope.

Claim 48

A reactor for depositing semiconductor material on a substrate comprising: a) an outer tubular envelope (10) having first and second opposing end plates (64, 66), said envelope being adapted to be mounted in a longitudinally extending vertical plane; b) inner and outer reactant tubes (16, 14) extending in said longitudinal plane within said envelope (10) and coaxial to the longitudinal axis of said envelope; c) a longitudinally extended region between said outer reactor tube (14) and said envelope (10) comprising an exhaust region (R o ), a longitudinally extended region between the inner reactor tube (16) and said outer reactor tube (14) comprising a purge gas region (R int ) and the region within the inner reactor tube (16) forming a reaction gas flow region (R in ); d) susceptor means (24) disposed within said purge gas region (R int ) comprising a heatable disc (124) having a transverse bore (400) extending therethrough with an internal peripheral projection (112) at one end of the bore against which said substrate (100) is held by a plug (102) extending into said bore, such that, a deposition surface of said substrate (100) is exposed to said reaction gas flow region and aligned in a plane parallel to the axial plane of the envelope.

Claim 49

The apparatus according to claim 36, wherein said susceptor means (24) are cradled on a drive mechanism (130, 134) in the purge gas region (R int ) and including crane means (40) for grasping the plug (102) about the periphery thereof for lowering and removing the susceptor means from the drive mechanism.

Claim 50

The system according to claim 36 or claim 37, further including resistance heating means mounted on said susceptor.

Claim 51

Apparatus according to claim 2, wherein the rotator means is located horizontally adjacent the susceptor (24) to directly rotate the susceptor; access means horizontally adjacent said susceptor to provide access to said susceptor; grasping means (26a, b) adjacent said access means and horizontally translatable with respect thereto for grasping said susceptor for introducing and removing said susceptor from said chamber; and means (28, 29) for releasing and engaging said rotator means from or with said susceptor to permit said susceptor to be removed or driven respectively.

Claim 52

A susceptor for CVD reactors comprising a heatable member (124) having a wall with a bore (400) extending therethrough for accepting a substrate (100) such that a substrate surface is exposed through the bore and having a radial extending portion (112) thereon against which the edges of said substrate (100) abut, and plug means (102) extending into said bore to urge the substrate against the said portion (112).

Claim 53

A susceptor for CVD reactors comprising a heatable member (124) having a wall with a bore (400) extending therethrough for accepting a substrate (100) such that a substrate surface is exposed through the bore and having a radial extending portion (112) thereon against which the edges of said substrate (100) abut, and plug means (102) extending into said bore to urge the substrate against the said portion (112).