Patent EP0257870A2 successfully refreshed from Google Patents.
EP0257870A2
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EP
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A semiconductor device, making and testing thereof
Assignee: Mitsubishi Electric Corp
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Filing: 1987-08-05
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Granted: —
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Expires: 2007-08-05
Abstract
Abstract A semiconductor device operating in a high frequency range is in structure capable of facilitating a quick high frequency characteristic test in high accuracy. A semiconductor substrate (1) is provided on its major surface with an input electrode pad (2a) and an output electrode pad (2b) to be connected with integrated circuits included in the semiconductor substrate (1) respectively, while grounding electrode pads (2c) are formed on both sides of the input and output electrode pads (2a, 2b) respectively to sandwich the same. The grounding electrode pads (2c) ground the semiconductor substrate (1) in a high frequency characteristic test. The input electrode pad (2a) and the grounding electrode pads (2c) on both sides thereof as well as the output electrode pad (2b) and the grounding electrode pads (2c) on both sides thereof are positioned to be in contact with a probing needle of a well-known high frequency wafer probe.
Inventors
- 👤 Takayuki Katoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 05:37
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/27; H10P74/273; G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2884; H10W; H10W44/00; H10W44/20
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
92 words
A semiconductor device operating in a high frequency range comprising: a semiconductor substrate (1) having a major surface and including integrated circuits; input electrode pad means (2a) formed on said major surface of said semiconductor substrate (1) and connected with said integrated circuits; output electrode pad means (2b) formed on said major surface of said semiconductor substrate (1) and connected with said integrated circuits; and grounding electrode pad means (2c) formed on said major surface of said semiconductor substrate (1) for grounding said semiconductor substrate (1) in a high frequency characteristic test.
Claim 2
Dependent Claim
92 words
A semiconductor device operating in a high frequency range comprising: a semiconductor substrate (1) having a major surface and including integrated circuits; input electrode pad means (2a) formed on said major surface of said semiconductor substrate (1) and connected with said integrated circuits; output electrode pad means (2b) formed on said major surface of said semiconductor substrate (1) and connected with said integrated circuits; and grounding electrode pad means (2c) formed on said major surface of said semiconductor substrate (1) for grounding said semiconductor substrate (1) in a high frequency characteristic test.
Claim 3
Dependent Claim
39 words
A semiconductor device operating in a high frequency range in accordance with claim 1, wherein said grounding electrode pad means (2c) is provided to sandwich said input electrode pad means (2a) and said output electrode pad means (2b) respectively.
Claim 4
Dependent Claim
38 words
A semiconductor device operating in a high frequency range in accordance with claim 2, wherein said input electrode pad means (2a) and said output electrode pad means (2b) are respectively aligned with said grounding electrode pad means (2c).
Claim 5
Dependent Claim
34 words
A semiconductor device operating in a high frequency range in accordance with claim 3, wherein a first distance between said grounding electrode pad means (2c) and said input electrode pad means (2a) is constant.
Claim 6
Dependent Claim
36 words
A semiconductor device operating in a high frequency range in accordance with claim 3 or 4, wherein a second distance between said grounding electrode pad means (2c) and said output electrode pad means (2b) is constant.
Claim 7
Dependent Claim
24 words
A semiconductor device operating in a high frequency range in accordance with claim 5, wherein said first distance is equal to said second distance.
Claim 8
Dependent Claim
52 words
A semiconductor device operating in a high frequency range in accordance with claim 1, wherein parts of said semiconductor substrate (1) including parts of said input electrode pad means (2a) and said output electrode pad means (2b) and said grounding electrode pad means (2c) are removed after said high frequency characteristic test.
Claim 9
Dependent Claim
138 words
A semiconductor device operating in a high frequency range comprising: a semiconductor device (1) having a first major surface, a second major surface, integrated circuits and openings (3) passing through said first and second major surfaces; an input electrode pad (2a) formed on said first major surface of said semiconductor substrate (1) and connected with said integrated circuits; an output electrode pad (2b) formed on said first major surface of said semiconductor substrate (1) and connected with said integrated circuits; a grounding metal member (4) provided on said second major surface of said semiconductor substrate (1) for grounding said semiconductor substrate (1) in a high frequency characteristic test; and grounding electrode pads (2c) formed on said first major surface of said semiconductor substrate (1) to be in conduction with said grounding metal member (4) through said openings (3).
Claim 10
Dependent Claim
138 words
A semiconductor device operating in a high frequency range comprising: a semiconductor device (1) having a first major surface, a second major surface, integrated circuits and openings (3) passing through said first and second major surfaces; an input electrode pad (2a) formed on said first major surface of said semiconductor substrate (1) and connected with said integrated circuits; an output electrode pad (2b) formed on said first major surface of said semiconductor substrate (1) and connected with said integrated circuits; a grounding metal member (4) provided on said second major surface of said semiconductor substrate (1) for grounding said semiconductor substrate (1) in a high frequency characteristic test; and grounding electrode pads (2c) formed on said first major surface of said semiconductor substrate (1) to be in conduction with said grounding metal member (4) through said openings (3).
Claim 11
Dependent Claim
36 words
A semiconductor device operating in a high frequency range in accordance with claim 8, wherein said grounding electrode pads (2c) are provided to sandwich said input electrode pad (2a) and said output electrode pad (2b) respectively.
Claim 12
Dependent Claim
35 words
A semiconductor device operating in a high frequency range in accordance with claim 9, wherein said input electrode pad (2a) and said output electrode pad (2b) are respectively aligned with said grounding electrode pads (2c).
Claim 13
Dependent Claim
35 words
A semiconductor device operating in a high frequency range in accordance with claim 10, wherein a first distance between a pair of said grounding electrode pads (2c) and said input electrode pad (2a) is constant.
Claim 14
Dependent Claim
37 words
A semiconductor device operating in a high frequency range in accordance with claim 10 or 11, wherein a second distance between a pair of said grounding electrode pads (2c) and said output electrode pad (2b) is constant.
Claim 15
Dependent Claim
24 words
A semiconductor device operating in a high frequency range in accordance with claim 12, wherein said first distance is equal to said second distance.
Claim 16
Dependent Claim
56 words
A semiconductor device operating in a high frequency range in accordance with claim 8, wherein parts of said semiconductor substrate (1) including parts of said input electrode pad (2a) and said output electrode pad (2b), parts of said grounding metal member (4) and said grounding electrode pads (2c) are removed after said high frequency characteristic test.
Claim 17
Independent Claim
148 words
A method of manufacturing a semiconductor device operating in a high frequency range, said method comprising: a step of preparing a semiconductor substrate (1) having a major surface and including integrated circuits; a step of forming an input electrode pad (2a) on said major surface of said semiconductor substrate (1) to be connected with said integrated circuits; a step of forming an output electrode pad (2b) on said major surface of said semiconductor substrate (1) to be connected with said integrated circuits; a step of forming grounding electrode pads (2c) on said major surface of said semiconductor substrate (1) for grounding said semiconductor substrate (1) in a high frequency characteristic test; and a step of removing parts of said semiconductor substrate (1) including parts of said input electrode pad (2a) and said output electrode pad (2b) and said grounding electrode pads (2c) after said high frequency characteristic test.
Claim 18
Independent Claim
148 words
A method of manufacturing a semiconductor device operating in a high frequency range, said method comprising: a step of preparing a semiconductor substrate (1) having a major surface and including integrated circuits; a step of forming an input electrode pad (2a) on said major surface of said semiconductor substrate (1) to be connected with said integrated circuits; a step of forming an output electrode pad (2b) on said major surface of said semiconductor substrate (1) to be connected with said integrated circuits; a step of forming grounding electrode pads (2c) on said major surface of said semiconductor substrate (1) for grounding said semiconductor substrate (1) in a high frequency characteristic test; and a step of removing parts of said semiconductor substrate (1) including parts of said input electrode pad (2a) and said output electrode pad (2b) and said grounding electrode pads (2c) after said high frequency characteristic test.
Claim 19
Dependent Claim
83 words
A method of manufacturing a semiconductor device operating in a high frequency range in accordance with claim 15, wherein said grounding electrode pads (2c) forming step includes a step of sandwiching said input electrode pad (2a) with a first constant distance between a pair of said grounding electrode pads (2c) and said input electrode pad (2a) and said output electrode pad (2b) with a second constant distance between a pair of said grounding electrode pads (2c) and said output electrode pad (2b) respectively.
Claim 20
Dependent Claim
39 words
A method of manufacturing a semiconductor device operating in a high frequency range in accordance with claim 16, wherein said input electrode pad (2a) and said output electrode pad (2b) are respectively aligned with said grounding electrode pads (2c).
Claim 21
Dependent Claim
30 words
A method of manufacturing a semiconductor device operating in a high frequency range in accordance with claim 17, wherein said first constant distance is equal to said second constant distance.
Claim 22
Independent Claim
230 words
A method of manufacturing a semiconductor device operating in a high frequency range, said method comprising: a step of preparing a semiconductor substrate (1) having a first major surface and a second major surface and including integrated circuits; a step of forming openings (3) passing through said first major surface and said second major surface in said semiconductor substrate (1); a step of forming an input electrode pad (2a) on said first major surface of said semiconductor substrate (1) to be connected with said integrated circuits; a step of forming an output electrode pad (2b) on said first major surface of said semiconductor substrate (1) to be connected with said integrated circuits; a step of forming grounding electrode pads (2c) on said first major surface of said semiconductor substrate (1) for grounding said semiconductor substrate (1) in a high frequency characteristic test; a step of forming a grounding metal member (4) on said second major surface of said semiconductor substrate (1) to be in conduction with said grounding electrode pads (2c); a step of bringing said grounding electrode pads (2c) into conduction with said grounding metal member (4) through said openings (3); and a step of removing parts of said semiconductor substrate (1) including parts of said input electrode pad (2a) and said output electrode pad (2b), parts of said grounding metal member (4) and said grounding electrode pads (2c).
Claim 23
Independent Claim
230 words
A method of manufacturing a semiconductor device operating in a high frequency range, said method comprising: a step of preparing a semiconductor substrate (1) having a first major surface and a second major surface and including integrated circuits; a step of forming openings (3) passing through said first major surface and said second major surface in said semiconductor substrate (1); a step of forming an input electrode pad (2a) on said first major surface of said semiconductor substrate (1) to be connected with said integrated circuits; a step of forming an output electrode pad (2b) on said first major surface of said semiconductor substrate (1) to be connected with said integrated circuits; a step of forming grounding electrode pads (2c) on said first major surface of said semiconductor substrate (1) for grounding said semiconductor substrate (1) in a high frequency characteristic test; a step of forming a grounding metal member (4) on said second major surface of said semiconductor substrate (1) to be in conduction with said grounding electrode pads (2c); a step of bringing said grounding electrode pads (2c) into conduction with said grounding metal member (4) through said openings (3); and a step of removing parts of said semiconductor substrate (1) including parts of said input electrode pad (2a) and said output electrode pad (2b), parts of said grounding metal member (4) and said grounding electrode pads (2c).
Claim 24
Dependent Claim
83 words
A method of manufacturing a semiconductor device operating in a high frequency range in accordance with claim 19, wherein said grounding electrode pads (2c) forming step includes a step of sandwiching said input electrode pad (2a) with a first constant distance between a pair of said grounding electrode pads (2c) and said input electrode pad (2a) and said output electrode pad (2b) with a second constant distance between a pair of said grounding electrode pads (2c) and said input electrode pad (2a) respectively.
Claim 25
Dependent Claim
39 words
A method of manufacturing a semiconductor device operating in a high frequency range in accordance with claim 20, wherein said input electrode pad (2a) and said output electrode pad (2b) are respectively aligned with said grounding electrode pads (2c).
Claim 26
Dependent Claim
28 words
A method of manufacturing a semiconductor device operating in a high frequency range in accordance with claim 21, wherein said first distance is equal to said second distance.
References Cited (Backward Citations)
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