Patent EP0202166A1 successfully refreshed from Google Patents.
Patent EP0257474A2 successfully refreshed from Google Patents.
EP0257474A2
Expired / Lapsed
EP
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Superconducting device
Assignee: Hitachi Ltd
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Filing: 1987-08-13
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Granted: —
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Expires: 2007-08-13
Abstract
Abstract In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes (6) provided in contact with a semiconductor (1) is controlled by a control electrode (3) provided between the superconducting electrodes, high impurity concentration regions (4) are formed within the semiconductor so as to lie in contact with the superconducting electrodes (6) and to extend to under ends of the control electrode.
Inventors
- 👤 Toshikazu Nishino
- 👤 Ushio Kawabe
- 👤 Mutsuko Hatano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 07:42
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/128
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
140 words
A superconducting device comprising: a semiconductor body (1, 10); a pair of superconducting electrodes (6) which are formed in contact with said semiconductor body, and which are spaced at a distance of 5 to 20 times a coherence length of a superconducting electron pair in said semiconductor body; a pair of impurity regions (4) which are formed within said semiconductor body in a manner to lie in contact with said superconducting electrodes and to extend between said superconducting electrodes; and control electrode means (3) to control current flowing between said superconducting electrodes, said means being formed on said semiconductor body so as to cover at least an area between said impurity regions (6) and to be separated from said semiconductor body by an electric insulator film (2), said means serving to control a superconducting weak-coupling state between said superconducting electrodes.
Claim 2
Dependent Claim
140 words
A superconducting device comprising: a semiconductor body (1, 10); a pair of superconducting electrodes (6) which are formed in contact with said semiconductor body, and which are spaced at a distance of 5 to 20 times a coherence length of a superconducting electron pair in said semiconductor body; a pair of impurity regions (4) which are formed within said semiconductor body in a manner to lie in contact with said superconducting electrodes and to extend between said superconducting electrodes; and control electrode means (3) to control current flowing between said superconducting electrodes, said means being formed on said semiconductor body so as to cover at least an area between said impurity regions (6) and to be separated from said semiconductor body by an electric insulator film (2), said means serving to control a superconducting weak-coupling state between said superconducting electrodes.
Claim 3
Dependent Claim
26 words
The superconducting device as defined in claim 1, further comprising an impurity layer (7) just under said control electrode means (3) and between said impurity regions.
Claim 4
Dependent Claim
24 words
The superconducting device as defined in claim 1 or claim 2, wherein said impurity regions (4) extend to just under said control electrode means.
Claim 5
Dependent Claim
47 words
The superconducting device as defined in any of the claims 1 to 3, wherein said superconducting electrodes (6) are so formed as to interpose therebetween a semiconductor projection (8) which is formed in said semiconductor body, and said impurity regions (4) are formed within said semiconductor projection.
Claim 6
Dependent Claim
54 words
The superconducting device as defined in any of the claims 1 to 4, wherein said semiconductor body (10) is provided on a base plate (9) adapted to transmit light (11) therethrough, and means is provided for projecting light on a part of said semiconductor body under said control electrode means through said base plate.
Claim 7
Dependent Claim
58 words
The superconducting device as defined in any of the claims 1 to 5, wherein said control electrode means (3) is formed on said superconducting electrodes (6) and is separated therefrom by insulating thin films (13) which are made of at least one member selected from the group consisting of an oxide and a nitride of said superconducting electrodes.
Claim 8
Dependent Claim
23 words
The superconducting device as defined in claim 6, wherein said insulating thin films (13) lie in contact with said electric insulator film (2).
Claim 9
Dependent Claim
40 words
The superconducting device as defined in any of the claims 1 to 7, wherein said insulator film (2) is made of at least one member selected from the group consisting of an oxide and a nitride of said superconducting electrodes.
Claim 10
Dependent Claim
28 words
The superconducting device as defined in any of the claims 6 to 8, wherein said each insulating thin film (13) is thicker than said electric insulator film (2).
Claim 11
Dependent Claim
120 words
A superconducting device comprising two superconducting electrodes (6) which are formed in contact with a semiconductor (1, 10) and in opposition to each other, two impurity regions (4) which are formed in a surface of said semiconductor (1, 10) in contact with said superconducting electrodes (6) and so as to further extend from inner ends of said superconducting electrodes (6) to inner sides of an area of the opposition, a channel (5) which is made of the semiconductor corresponding to the opposition area of said superconducting electrodes between said impurity regions, and a control electrode (3) which is provided so as to cover at least said channel (5) of said semiconductor corresponding to said opposition area of said superconducting electrodes.
Claim 12
Dependent Claim
120 words
A superconducting device comprising two superconducting electrodes (6) which are formed in contact with a semiconductor (1, 10) and in opposition to each other, two impurity regions (4) which are formed in a surface of said semiconductor (1, 10) in contact with said superconducting electrodes (6) and so as to further extend from inner ends of said superconducting electrodes (6) to inner sides of an area of the opposition, a channel (5) which is made of the semiconductor corresponding to the opposition area of said superconducting electrodes between said impurity regions, and a control electrode (3) which is provided so as to cover at least said channel (5) of said semiconductor corresponding to said opposition area of said superconducting electrodes.
Claim 13
Dependent Claim
27 words
The superconducting device as defined in claim 10, wherein said control electrode (3) exists only over said semiconductor and does not exist over said superconducting electrodes (6).
Claim 14
Dependent Claim
26 words
The superconducting device as defined in claim 10 or 11, wherein said control electrode (3) is narrower than said opposition area of said superconducting electrodes (6).
Claim 15
Dependent Claim
60 words
The superconducting device as defined in any of the claims 10 to 12, wherein said superconducting electrodes (6) are formed on both sides of a projection (8) of said semiconductor provided in a semiconductor body, said impurity regions (4) and said channel (5) are formed in said projection (8), and said control electrode (3) is provided over said projection (8).
Claim 16
Dependent Claim
31 words
The superconducting device as defined in any of the claims 10 to 13, wherein said impurity regions and said channel are formed in a semiconductor body (1) whose surface is flat.
Claim 17
Dependent Claim
49 words
The superconducting device as defined in any of the claims 1 to 14, wherein a material of which said superconducting electrodes (6) are made is selected from the group consisting of Pb, Pb alloys, Nb, Nb compounds such as NbN, Nb₃Si and Nb₃Sn, and Mo compounds such as MoN.
Claim 18
Dependent Claim
34 words
The superconducting device as defined in any of the claims 1 to 10, wherein a material of said semiconductor is selected from the group consisting of Si, Ge, GaAs, InAs, InP, InSb and GaP.
Claim 19
Dependent Claim
71 words
A superconducting device comprising a channel layer (15), a control electrode which is connected to said channel layer for the purpose of applying an electric field to said channel layer, and a single superconducting electrode (6, 16) of superconductor which extends in contact with said channel layer (15), at least a part (16) of said superconductor of said superconducting electrode having a thickness less than a coherence length of said superconductor.
Claim 20
Dependent Claim
71 words
A superconducting device comprising a channel layer (15), a control electrode which is connected to said channel layer for the purpose of applying an electric field to said channel layer, and a single superconducting electrode (6, 16) of superconductor which extends in contact with said channel layer (15), at least a part (16) of said superconductor of said superconducting electrode having a thickness less than a coherence length of said superconductor.
Claim 21
Dependent Claim
84 words
A superconducting device comprising at least: a semiconductor body (1), a pair of superconducting electrodes (6) which lie in contact with said semiconductor body, impurity regions (4) which lie in contact with respectively corresponding ones of said pair of superconducting electrodes (6), and means (2, 3) to control current flowing between said pair of superconducting electrodes, said means being formed on said semiconductor body, the current control means (2, 3) having an effective width which is smaller than a distance between said superconducting electrodes.
Claim 22
Dependent Claim
84 words
A superconducting device comprising at least: a semiconductor body (1), a pair of superconducting electrodes (6) which lie in contact with said semiconductor body, impurity regions (4) which lie in contact with respectively corresponding ones of said pair of superconducting electrodes (6), and means (2, 3) to control current flowing between said pair of superconducting electrodes, said means being formed on said semiconductor body, the current control means (2, 3) having an effective width which is smaller than a distance between said superconducting electrodes.
Claim 23
Dependent Claim
37 words
The superconducting device as defined in claim 18, wherein said current control means comprises an electric insulator film (2) which is formed on said semiconductor body, and an electric conductor layer (3) which lies on said film.
References Cited (Backward Citations)
No citation records indexed.
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