Abstract A semiconductor device has a structure in which two semiconductor substrates (1, 2) are coupled to each other through a semiconductor oxide film (3) and a metal silicide film (9), and a semiconductor element, for example, a bi-polar transistor is formed in the semiconductor substrate (2) on the metal silicide film side, whereby a metal silicide layer (9) having a high melting point is provided beneath one region of the bi-polar transistor for example, an n⁺ buried collector layer (5) and in ohmic contact with the n⁺ buried collector layer. An electrical isolation between the adjacent semiconductor elements is made by an insulating layer (12, 18).
A semiconductor device in which two semiconductor substrates (1, 2) are coupled to each other through a semiconductor oxide film (3) and a metal silicide film (9), a semiconductor element is formed in the semiconductor substrate (2) on the metal silicide film side, and one region (5) of said semiconductor element is connected to said metal silicide film (9).
Claim 2
Dependent Claim
59 words
A semiconductor device in which two semiconductor substrates (1, 2) are coupled to each other through a semiconductor oxide film (3) and a metal silicide film (9), a semiconductor element is formed in the semiconductor substrate (2) on the metal silicide film side, and one region (5) of said semiconductor element is connected to said metal silicide film (9).
Claim 3
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said semiconductor element is a bi-polar transistor the collector region (5) of which is connected to said metal silicide film (9).
Claim 4
Dependent Claim
32 words
A semiconductor device according to claim 1, wherein a plurality of said semiconductor elements are formed and the adjacent semiconductor elements are isolated from each other by an insulating layer (12, 18).
Claim 5
Dependent Claim
29 words
A semiconductor device according to claim 3, wherein said semiconductor element is a bi-polar transistor the collector region (5) of which is connected to said metal silicide film (9).