Semiconductor device having a burried layer

Abstract

Abstract A semiconductor device has a structure in which two semiconductor substrates (1, 2) are coupled to each other through a semiconductor oxide film (3) and a metal silicide film (9), and a semiconductor element, for example, a bi-polar transistor is formed in the semicon­ductor substrate (2) on the metal silicide film side, whereby a metal silicide layer (9) having a high melting point is provided beneath one region of the bi-polar transistor for example, an n⁺ buried collector layer (5) and in ohmic contact with the n⁺ buried collector layer. An electrical isolation between the adjacent semiconduc­tor elements is made by an insulating layer (12, 18).

Inventors

• 👤 Hideo Homma
• 👤 Yutaka Misawa
• 👤 Naohiro Momma

Bibliographic Details