Patent EP0255454A2 successfully refreshed from Google Patents.
EP0255454A2
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Apparatus for chemical vapor deposition
Assignee: Ulvac Inc
•
Filing: 1987-07-24
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Granted: —
•
Expires: 2007-07-24
Abstract
Abstract An apparatus for a chemical vapor deposition in which at least one substrate 3 which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber 1, the reaction chamber is provided with a nozzle 4a for feeding a reactive gas into the reaction chamber, and a light source 8 is provided for emitting a light beam to heat the substrate. The combination of substrate heating source using infrared rays and a laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and improving the high reproducibility and controllability.
Inventors
- 👤 Izumi Nakayama
- 👤 Akitoshi Suzuki
- 👤 Hiroyuki Nawa
- 👤 Motohiro Kaneko
- 👤 Yoshiro Kusumoto
- 👤 Kazuo Takakuwa
- 👤 Tetsuya Ikuta
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:53
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45519; C23C16/48; C23C16/481; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
59 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber in which at least one substrate is disposed; means for feeding a reactive gas into said reaction chamber; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film on said substrate.
Claim 2
Independent Claim
59 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber in which at least one substrate is disposed; means for feeding a reactive gas into said reaction chamber; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film on said substrate.
Claim 3
Dependent Claim
134 words
An apparatus according to claim 1, wherein said each substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface thereof with a first metal film, said reaction gas comprises a gas containing a metal element and a reducing gas, and a temperature difference is created between said electrical insulating film and said first metal film on the surface of said substrate by the difference in a light absorptivity of the body of said substrate, said electrical insulating film and said first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film of said metal element is formed on the surface of the first metal film.
Claim 4
Dependent Claim
208 words
An apparatus according to claim 1, wherein said each substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface of said substrate no electrical insulating film, said reactive gas comprises a gas containing a metal element and/or a reducing gas, at least said gas containing the metal element is introduced into said reaction chamber under reduced pressure to form a first metal film including said metal element on the portion of the surface of said substrate formed with no electrical insulating film, and after formation of said first metal film, said gas containing the metal element and said reducing gas are introduced into said reaction chamber and said each substrate is irradiated by the light beam from said light beam emitting means to create a temperature difference between said electrical insulating film and said first metal film thus formed by the difference in a light absorptivity of the body of said substrate, the electrical insulating film and the first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film is formed on the surface of the first metal film.
Claim 5
Dependent Claim
28 words
An apparatus according to claim 2 or 3, wherein the metal element which constitutes said first metal film is the same as that of said second metal film.
Claim 6
Dependent Claim
27 words
An apparatus according to claim 2 or 3, wherein the metal element which constitutes said first metal film is different from that of said second metal film.
Claim 7
Independent Claim
49 words
An apparatus according to any one of claims 2 to 5, wherein said reducing gas is H₂, and said gas containing the metal element is any one or more in combination selected from metallic halides such as WF₆, MoF₆, TaF₅, CrF₄, TiF₄, TiCl₄, MoCl₅, WCl₆, AlCl₃ and the like.
Claim 8
Independent Claim
60 words
An apparatus according to any one of claims 2 to 6, wherein said electrical insulating film on the surface of the substrate is formed of any one or more selected from oxides such as SiO₂, Al₂O₃, BSG, PSG, BPSG and the like, nitrides such as BN, SiN x and the like, and compound such as SiN x O y .
Claim 9
Independent Claim
41 words
An apparatus according to any one of claims 2 to 7, wherein said first metal film is formed of any one or more selected from metals such as W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au, Ni and the like.
Claim 10
Independent Claim
55 words
An apparatus according to any one of claims 2 to 7, wherein said first metal film is formed of any one or more selected from metallic silicides such as WSi x , TiSi x , TaSi x , MoSi x , PtSi x and the like, and metallic nitrides such as TiN or the like.
Claim 11
Independent Claim
29 words
An apparatus according to any one of claims 2 to 9, wherein said each substrate is made of any one of Si, SiO₂, Al₂O₃, glass, sapphire or the like.
Claim 12
Independent Claim
42 words
An apparatus according to any one of claims 3 to 9, wherein said each substrate is made of any one of SiO₂, Al₂O₃, glass, sapphire or the like which is provided with a thin film of Si on the uppermost layer thereof.
Claim 13
Dependent Claim
25 words
An apparatus according to claim 1, said reactive gas feeding means comprises at least one nozzle for injecting the reactive gas into the reaction chamber.
Claim 14
Dependent Claim
29 words
An apparatus according to claim 1, wherein said light beam emitting means comprises at least one high intensity lamp which radiates heat energy at a wavelength of approximately 0.75-5µm.
Claim 15
Dependent Claim
39 words
An apparatus according to claim 13, wherein said each lamp is positioned outside of the reaction chamber, the light beam from the lamp being transmitted through a transparent window provided on the reaction chamber wall into the reaction chamber.
Claim 16
Dependent Claim
37 words
An apparatus according to claim 1, further comprising means for optically filtrating the light beam from the light beam emitting means, said filter means being interposed between the light beam emitting means and the reaction chamber wall.
Claim 17
Independent Claim
69 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber; means for feeding a reactive gas into said reaction chamber; means for holding at least one substrate in said reaction chamber and having means for heating said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film on said substrate.
Claim 18
Independent Claim
69 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber; means for feeding a reactive gas into said reaction chamber; means for holding at least one substrate in said reaction chamber and having means for heating said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film on said substrate.
Claim 19
Dependent Claim
134 words
An apparatus according to claim 16, wherein said each substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface thereof with a first metal film, said reaction gas comprises a gas containing a metal element and a reducing gas, and a temperature difference is created between said electrical insulating film and said first metal film on the surface of said substrate by the difference in a light absorptivity of the body of said substrate, said electrical insulating film and said first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film of said metal element is formed on the surface of the first metal film.
Claim 20
Dependent Claim
209 words
An apparatus according to claim 16, wherein said each substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface of said substrate with no electrical insulating film, said reactive gas comprises a gas containing a metal element and/or a reducing gas, at least said gas containing the metal element is introduced into said reaction chamber under reduced pressure to form a first metal film including said metal element on the portion of the surface of said substrate formed with no electrical insulating film, and after formation of said first metal film, said gas containing the metal element and said reducing gas are introduced into said reaction chamber and said each substrate is irradiated by the light beam from said light beam emitting means to create a temperature difference between said electrical insulating film and said first metal film thus formed by the difference in a light absorptivity of the body of said substrate, the electrical insulating film and the first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film is formed on the surface of the first metal film.
Claim 21
Dependent Claim
28 words
An apparatus according to claim 17 or 18, wherein the metal element which constitutes said first metal film is the same as that of said second metal film.
Claim 22
Dependent Claim
27 words
An apparatus according to claim 17 or 18, wherein the metal element which constitutes said first metal film is different from that of said second metal film.
Claim 23
Independent Claim
52 words
An apparatus according to any one of claims 16 to 20, wherein said reducing gas is H₂, and said gas containing the metal element is any one or more in combination selected from metallic halides such as halides such as WF₆, MoF₆, TaF₅, CrF₄, TiF₄, TiCl₄, MoCl₅, WCl₆, AlCl₃ and the like.
Claim 24
Independent Claim
60 words
An apparatus according to any one of claims 16 to 21, wherein said electrical insulating film on the surface of the substrate is formed of any one or more selected from oxides such as SiO₂, Al₂O₃, BSG, PSG, BPSG and the like, nitrides such as BN, SiN x and the like, and compound such as SiN x O y .
Claim 25
Independent Claim
41 words
An apparatus according to any one of claims 16 to 22, wherein said first metal film is formed of any one or more selected from metals such as W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au, Ni and the like.
Claim 26
Independent Claim
55 words
An apparatus according to any one of claims 16 to 22, wherein said first metal film is formed of any one or more selected from metallic silicides such as WSi x , TiSi x , TaSi x , MoSi x , PtSi x and the like, and metallic nitrides such as TiN or the like.
Claim 27
Independent Claim
29 words
An apparatus according to any one of claims 16 to 24, wherein said each substrate is made of any one of Si, SiO₂, Al₂O₃, glass, sapphire or the like.
Claim 28
Independent Claim
42 words
An apparatus according to any one of claims 18 to 24, wherein said each substrate is made of any one of SiO₂, Al₂O₃, glass, sapphire or the like which is provided with a thin film of Si on the uppermost layer thereof.
Claim 29
Dependent Claim
25 words
An apparatus according to claim 16, said reactive gas feeding means comprises at least one nozzle for injecting the reactive gas into the reaction chamber.
Claim 30
Dependent Claim
29 words
An apparatus according to claim 16, wherein said light beam emitting means comprises at least one high intensity lamp which radiates heat energy at a wavelength of approximately 0.75-5µm.
Claim 31
Independent Claim
39 words
An apparatus according to cliam 28, wherein said each lamp is positioned outside of the reaction chamber, the light beam from the lamp being transmitted through a transparent window provided on the reaction chamber wall into the reaction chamber.
Claim 32
Independent Claim
39 words
An apparatus according to cliam 28, wherein said each lamp is positioned outside of the reaction chamber, the light beam from the lamp being transmitted through a transparent window provided on the reaction chamber wall into the reaction chamber.
Claim 33
Dependent Claim
37 words
An apparatus according to claim 16, further comprising means for optically filtrating the light beam from the light beam emitting means, said filter means being interposed between the light beam emitting means and the reaction chamber wall.
Claim 34
Independent Claim
107 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber in which at least one substrate is disposed; means for feeding a first gas substantially parallel to the surface of said substrate under reduced pressure in a sheet-like flow; means for feeding a second gas opposite to the surface of said substrate to put said first gas flow into a laminar flow state in the vicinity of said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film having the component of said first gas on said substrate.
Claim 35
Independent Claim
107 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber in which at least one substrate is disposed; means for feeding a first gas substantially parallel to the surface of said substrate under reduced pressure in a sheet-like flow; means for feeding a second gas opposite to the surface of said substrate to put said first gas flow into a laminar flow state in the vicinity of said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film having the component of said first gas on said substrate.
Claim 36
Dependent Claim
152 words
An apparatus according to claim 31, wherein said each substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface thereof with a first metal film, said first gas comprises a gas containing a metal element and a reducing gas, said second gas comprises an inert gas or a gas containing the inert gas as a main component, and a temperature difference is created between said electrical insulating film and said first metal film on the surface of said substrate by the difference in a light absorptivity of the body of said substrate, said electrical insulating film and said first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film of said metal element is formed on the surface of the first metal film.
Claim 37
Dependent Claim
226 words
An apparatus according to claim 31, wherein said each substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface of said substrate no electrical insulating film, said first gas comprises a gas containing a metal element and/or a reducing gas, said second gas comprises an inert gas or a gas containing the inert gas as a main component, at least said gas containing the metal element is introduced into said reaction chamber under reduced pressure to form a first metal film including said metal element on the portion of the surface of said substrate formed with no electrical insulating film, and after formation of said first metal film, said gas containing the metal element and said reducing gas are introduced into said reaction chamber and said each substrate is irradiated by the light beam from said light beam emitting means to create a temperature difference between said electrical insulating film and said first metal film thus formed by the difference in a light absorptivity of the body of said substrate, the electrical insulating film and the first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film is formed on the surface of the first metal film.
Claim 38
Dependent Claim
28 words
An apparatus according to claim 32 or 33, wherein the metal element which constitutes said first metal film is the same as that of said second metal film.
Claim 39
Dependent Claim
27 words
An apparatus according to claim 32 or 33, wherein the metal element which constitutes said first metal film is different from that of said second metal film.
Claim 40
Independent Claim
53 words
An apparatus according to any one of claims 32 to 35, wherein said reducing gas is H₂, and said first gas containing the metal element is any one or more in combination selected from metallic halides such as halides such as WF₆, MoF₆, TaF₅, CrF₄, TiF₄, TiCl₄, MoCl₅, MCl₆, AlCl₃ and the like.
Claim 41
Independent Claim
60 words
An apparatus according to any one of claims 32 to 36, wherein said electrical insulating film on the surface of the substrate is formed of any one or more selected from oxides such as SiO₂, Al₂O₃, BSG, PSG, BPSG and the like, nitrides such as BN, SiN x and the like, and compound such as SiN x O y .
Claim 42
Independent Claim
41 words
An apparatus according to any one of claims 32 to 37, wherein said first metal film is formed of any one or more selected from metals such as W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au, Ni and the like.
Claim 43
Independent Claim
55 words
An apparatus according to any one of claims 32 to 37, wherein said first metal film is formed of any one or more selected from metallic silicides such as WSi x , TiSi x , TaSi x , MoSi x , PtSi x and the like, and metallic nitrides such as TiN or the like.
Claim 44
Independent Claim
29 words
An apparatus according to any one of claims 32 to 37, wherein said each substrate is made of any one of Si, SiO₂, Al₂O₃, glass, sapphire or the like.
Claim 45
Independent Claim
43 words
An apparatus according to any one of claims 33 to 37, wherein said each substrate is made of any one of Si, SiO₂, Al₂O₃, glass, sapphire or the like which is provided with a thin film of Si on the uppermost layer thereof.
Claim 46
Dependent Claim
29 words
An apparatus according to claim 31, wherein said light beam emitting means comprises at least one high intensity lamp which radiates heat energy at a wavelength of approximately 0.75-5µm.
Claim 47
Dependent Claim
39 words
An apparatus according to claim 42, wherein said each lamp is positioned outside of the reaction chamber, the light beam from the lamp being transmitted through a transparent window provided on the reaction chamber wall into the reaction chamber.
Claim 48
Dependent Claim
37 words
An apparatus according to claim 31, further comprising means for optically filtrating the light beam from the light beam emitting means, said filter means being interposed between the light beam emitting means and the reaction chamber wall.
Claim 49
Independent Claim
117 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber; means for supporting at least one substrate in said reaction chamber and having means for heating said substrate; means for feeding a first gas substantially parallel to the surface of said substrate under reduced pressure in a sheet-like flow; means for feeding a second gas opposite to the surface of said substrate to put said first gas flow into a laminar flow state in the vicinity of said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film having the component of said first gas on said substrate.
Claim 50
Independent Claim
117 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber; means for supporting at least one substrate in said reaction chamber and having means for heating said substrate; means for feeding a first gas substantially parallel to the surface of said substrate under reduced pressure in a sheet-like flow; means for feeding a second gas opposite to the surface of said substrate to put said first gas flow into a laminar flow state in the vicinity of said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film having the component of said first gas on said substrate.
Claim 51
Dependent Claim
152 words
An apparatus according to claim 45, wherein said each substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface thereof with a first metal film, said first gas comprises a gas containing a metal element and a reducing gas, said second gas comprises an inert gas or a gas containing the inert gas as a main component, and a temperature difference is created between said electrical insulating film and said first metal film on the surface of said substrate by the difference in a light absorptivity of the body of said substrate, said electrical insulating film and said first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film of said metal element is formed on the surface of the first metal film.
Claim 52
Dependent Claim
226 words
An apparatus according to claim 45, wherein said each substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface of said substrate no electrical insulating film, said first gas comprises a gas containing a metal element and/or a reducing gas, said second gas comprises an inert gas or a gas containing the inert gas as a main component, at least said gas containing the metal element is introduced into said reaction chamber under reduced pressure to form a first metal film including said metal element on the portion of the surface of said substrate formed with no electrical insulating film, and after formation of said first metal film, said gas containing the metal element and said reducing gas are introduced into said reaction chamber and said each substrate is irradiated by the light beam from said light beam emitting means to create a temperature difference between said electrical insulating film and said first metal film thus formed by the difference in a light absorptivity of the body of said substrate, the electrical insulating film and the first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film is formed on the surface of the first metal film.
Claim 53
Dependent Claim
28 words
An apparatus according to claim 46 or 47, wherein the metal element which constitutes said first metal film is the same as that of said second metal film.
Claim 54
Dependent Claim
27 words
An apparatus according to claim 46 or 47, wherein the metal element which constitutes said first metal film is different from that of said second metal film.
Claim 55
Independent Claim
50 words
An apparatus according to any one of claims 46 to 48, wherein said reducing gas is H₂, and said first gas containing the metal element is any one or more in combination selected from metallic halides such as WF₆, MoF₆, TaF₅, CrF₄, TiF₄, TiCl₄, MoCl₅, WCl₆, AlCl₃ and the like
Claim 56
Independent Claim
60 words
An apparatus according to any one of claims 46 to 49, wherein said electrical insulating film on the surface of the substrate is formed of any one or more selected from oxides such as SiO₂, Al₂O₃, BSG, PSG, BPSG and the like, nitrides such as BN, SiN x and the like, and compound such as SiN x O y .
Claim 57
Independent Claim
41 words
An apparatus according to any one of claims 46 to 51, wherein said first metal film is formed of any one or more selected from metals such as W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au, Ni and the like.
Claim 58
Independent Claim
55 words
An apparatus according to any one of claims 46 tp 52, wherein said first metal film is formed of any one or more selected from metallic silicides such as WSi x , TiSi x , TaSi x , MoSi x , PtSi x and the like, and metallic nitrides such as TiN or the like.
Claim 59
Independent Claim
29 words
An apparatus according to any one of claims 46 to 52, wherein said each substrate is made of any one of Si, SiO₂, Al₂O₃, glass, sapphire or the like.
Claim 60
Independent Claim
43 words
An apparatus according to any one of claims 47 to 52, wherein said each substrate is made of any one of Si, SiO₂, Al₂O₃, glass, sapphire or the like which is provided with a thin film of Si on the uppermost layer thereof.
Claim 61
Dependent Claim
29 words
An apparatus according to claim 45, wherein said light beam emitting means comprises at least one high intensity lamp which radiates heat energy at a wavelength of approximately 0.75-5µm.
Claim 62
Dependent Claim
39 words
An apparatus according to claim 56, wherein said each lamp is positioned outside of the reaction chamber, the light beam from the lamp being transmitted through a transparent window provided on the reaction chamber wall into the reaction chamber.
Claim 63
Dependent Claim
37 words
An apparatus according to claim 45, further comprising means for optically filtrating the light beam from the light beam emitting means, said filter means being interposed between the light beam emitting means and the reaction chamber wall.
Claim 64
Independent Claim
18 words
An apparatus according to any one of claims 16 and 45, wherein said substrate holding means is rotatable.
References Cited (Backward Citations)
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