Abstract A photoelectric conversion device is disclosed which comprises a large number of photoelectric conversion elements (6) arranged in an array on a substrate (1). Thin film transistors (7) individually corresponding to the photoelectric conversion elements are arranged in an array in parallel with the direction of the array of the photoelectric conversion elements. Paired electrodes of each of the thin film transistors (7) are arranged to oppose each other in the direction of the array of the photoelectric conversion elements (6) so that the width of the channel (13) formed between both the electrodes may be enlarged. Switching operations by the thin film transistor (7) are thus made reliable and the manufacture of the thin film transistor portion is facilitated.
An image sensor comprising: an insulating substrate (1), a plurality of photoelectric conversion elements (6), arranged in an array on said substrate; and thin film transistors (7) individually corresponding to said photoelectric conversion elements (6) and arranged in an array in a direction parallel with the direction of the array of said photoelectric conversion elements; characterised in that each said transistor comprises a pair of opposed electrodes (11, 12) spaced overlapping inter-relation in the longitudinal direction of the array.
Claim 2
Dependent Claim
79 words
An image sensor comprising: an insulating substrate (1), a plurality of photoelectric conversion elements (6), arranged in an array on said substrate; and thin film transistors (7) individually corresponding to said photoelectric conversion elements (6) and arranged in an array in a direction parallel with the direction of the array of said photoelectric conversion elements; characterised in that each said transistor comprises a pair of opposed electrodes (11, 12) spaced overlapping inter-relation in the longitudinal direction of the array.
Claim 3
Dependent Claim
46 words
An image sensor according to claim 1 characterised in that the two opposed electrodes (11, 12) of said thin film transistor (7) are formed so that a channel (13) formed therebetween is arranged in the direction perpendicular to the array of said photoelectric conversion elements (7).
Claim 4
Dependent Claim
28 words
An image sensor according to either of claims 1 or 2 characterised in that said thin film transistor (7) is in the form of a field effect transistor.
Claim 5
Dependent Claim
47 words
An image sensor according to claim 1 characterised in that the two opposed electrodes (11, 12) of said thin film transistor (7) are formed so that a channel (13) formed therebetween is angularly inclined from the perpendicular direction of the array of said photoelectric conversion elements (7).
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