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EP0254312B1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method and apparatus for synthesizing diamond

Assignee: Sumitomo Electric Industries Ltd
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Filing: 1987-07-23
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Granted: 1990-11-07
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Expires: 2007-07-23
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Abstract

No abstract record available.

Inventors

  • 👤 Akihiko Sumitomo Electric Ind.Ltd. Ikegaya
  • 👤 Tobioka Sumitomo Electric Ind.Ltd. Masaaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 03:44
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02; C30B29/04

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 235 words
A method of synthesizing diamond, which is substantially a method of synthesizing diamond by applying low-pressurized vapor phase, wherein said method uses carbon source such as solid carbon, or hydrocarbon, or hydrocarbon containing O and N in the bonded radical, or carbon tetrachloride, where said method causes raw-material compound gas composed of a mixture of said carbon ingredient and hydrogen to be activated for eventually precipitating diamond on the surface of substrate (4) being heated to a minimum of 600 ° C through a maximum of 1,200 ° C, wherein comprising steps and processes of: causing thermoelectron radiating material (2) heated to a minimum of 1,600 ° C to activate said compound gas; generating potential by connecting said thermoelectron radiating material (2) to negative electrode and grid (3) disposed between said thermoelectron radiating material (2) and substrate (4) subject to coating to positive electrode by applying a DC power-supply source; extracting thermoelectrons from said thermoelectron radiating material (2) for generating plasma; generating potential by connecting grid (3) to positive electrode and substrate (4) to negative electrode by applying another DC power-supply source (7) for generating plasma while maintaining potential of said substrate (4) negative; jointly applying effect of activation generated by thermoelectron radiating material (2) and another activation caused by generation of DC plasma; and controlling pressure inside of plasma-generating reactor to be a minimum of 10 Torr and a maximum of 400 Torr, respectively.
Claim 2
Independent Claim 235 words
A method of synthesizing diamond, which is substantially a method of synthesizing diamond by applying low-pressurized vapor phase, wherein said method uses carbon source such as solid carbon, or hydrocarbon, or hydrocarbon containing O and N in the bonded radical, or carbon tetrachloride, where said method causes raw-material compound gas composed of a mixture of said carbon ingredient and hydrogen to be activated for eventually precipitating diamond on the surface of substrate (4) being heated to a minimum of 600 ° C through a maximum of 1,200 ° C, wherein comprising steps and processes of: causing thermoelectron radiating material (2) heated to a minimum of 1,600 ° C to activate said compound gas; generating potential by connecting said thermoelectron radiating material (2) to negative electrode and grid (3) disposed between said thermoelectron radiating material (2) and substrate (4) subject to coating to positive electrode by applying a DC power-supply source; extracting thermoelectrons from said thermoelectron radiating material (2) for generating plasma; generating potential by connecting grid (3) to positive electrode and substrate (4) to negative electrode by applying another DC power-supply source (7) for generating plasma while maintaining potential of said substrate (4) negative; jointly applying effect of activation generated by thermoelectron radiating material (2) and another activation caused by generation of DC plasma; and controlling pressure inside of plasma-generating reactor to be a minimum of 10 Torr and a maximum of 400 Torr, respectively.
Claim 3
Dependent Claim 39 words
The method of synthesizing diamond defined in Claim 1, wherein the proportional number of carbon atom against the number of hydrogen atom of raw-material compound gas in said reactor is a minimum of 0.01% and a maximum of 20%.
Claim 4
Dependent Claim 34 words
The method of synthesizing diamond defined in claim 1, wherein said thermoelectron radiating material (2) is substantially comprised of any of those elements including tungsten (W), tantalum (Ta), molybdenum (Mo), or LaBs, or graphite.
Claim 5
Dependent Claim 29 words
The method of synthesizing diamond defined in claim 1, wherein a minimum of 10 W/cm2 of DC power is supplied between said thermoelectron radiating material (2) and grid (3).
Claim 6
Dependent Claim 27 words
The method of synthesizing diamond defined in claim 1, wherein 5 through 200 W/cm 2 of DC power is supplied between said grid (3) and substrate (4).
Claim 7
Dependent Claim 22 words
The method of synthesizing diamond defined in Claim 1, wherein temperature on the surface of said substrate (4) is adjustable as required.

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