Patent EP0252756A2 successfully refreshed from Google Patents.
EP0252756A2
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Semiconductor device comprising an organic material
Assignee: Canon Inc
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Filing: 1987-07-10
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Granted: —
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Expires: 2007-07-10
Abstract
Abstract A semiconductor device comprises a semiconductor having insulating layers (9) and conductive layers (8) laminated alternately. The semiconductor comprises an organic film, and electrodes (10) are provided on the semiconductor.
Inventors
- 👤 Ken Eguchi
- 👤 Haruki Kawada
- 👤 Kunihiro Sakai
- 👤 Yoshinori Tomida
- 👤 Hiroshi Matsuda
- 👤 Toshiaki Kimura
- 👤 Kiyoshi Takimoto
- 👤 Toshihiko Miyazaki
- 👤 Yuko Morikawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 16:33
CPC Classifications
H; H10; H10K; H10K85/00; H10K85/60; H10K85/649; H10K85/654; B; B82; B82Y; B82Y10/00; H10K10/00; H10K10/40; H10K10/43; H10K10/46; H10K10/701; H10K85/611; H10K85/652; H10K85/655; H10K85/657; H10K85/6572; H10K85/701
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
28 words
A semiconductor device comprising a semiconductor having insulating layers and conductive layers which are laminated alternately, and electrodes provided on said semiconductor, said semiconductor comprising an organic film.
Claim 2
Dependent Claim
28 words
A semiconductor device comprising a semiconductor having insulating layers and conductive layers which are laminated alternately, and electrodes provided on said semiconductor, said semiconductor comprising an organic film.
Claim 3
Dependent Claim
32 words
The semiconductor of Claim 1, wherein said organic film comprises a monomolecular film or monomolecular built-up film comprising an organic compound having at least hydrophilic part and a hydrophobic part in combination.
Claim 4
Dependent Claim
26 words
The semiconductor of Claim 2, wherein said organic compound is a charge transfer complex having an insulating, hydrophobic part and a conductive, hydrophilic part in combination.
Claim 5
Dependent Claim
24 words
The semiconductor of Claim 3, wherein said charge transfer complex is a complex of a long chain alkyl group-containing tertiary ammonium compound with tetracyanoquinodimethane.
Claim 6
Dependent Claim
41 words
A semiconductor device having an amplification device function, comprising insulating layers and conductive layers which are laminated alternately, a semiconductor containing at least two layers of the insulating layers, and electrodes provided on said semiconductor; said semiconductor comprising an organic film.
Claim 7
Dependent Claim
41 words
A semiconductor device having an amplification device function, comprising insulating layers and conductive layers which are laminated alternately, a semiconductor containing at least two layers of the insulating layers, and electrodes provided on said semiconductor; said semiconductor comprising an organic film.
Claim 8
Dependent Claim
32 words
A semiconductor device having switching effect, comprising an organic thin film provided between a pair of electrodes, said organic thin film comprising electrical insulating regions and conductive regions which are laminated alternately.
Claim 9
Dependent Claim
32 words
A semiconductor device having switching effect, comprising an organic thin film provided between a pair of electrodes, said organic thin film comprising electrical insulating regions and conductive regions which are laminated alternately.
Claim 10
Dependent Claim
21 words
The semiconductor device of Claim 6, wherein said organic thin film is formed of a monomolecular film or monomolecular built-up film.
Claim 11
Dependent Claim
19 words
The semiconductor device of Claim 7, wherein said monomolecular film or monomolecular built-up film is formed by Langmuir-Brodgett process.
Claim 12
Dependent Claim
25 words
The semiconductor device of Claim 6, wherein said organic thin film comprises a complex of a long chain alkyl group-containing tertiary ammonium compound with tetracyanoquinodimethane.
Claim 13
Dependent Claim
17 words
The semiconductor device of Claim 7, wherein said monomolecular built-up film of about 4 to 200 layers.
Claim 14
Dependent Claim
22 words
A semiconductor device having a periodic lamination structure comprising organic thin films and inorganic thin films which are laminated alternately, and electrodes.
Claim 15
Dependent Claim
22 words
A semiconductor device having a periodic lamination structure comprising organic thin films and inorganic thin films which are laminated alternately, and electrodes.
Claim 16
Dependent Claim
31 words
The semiconductor device of Claim 11, wherein the organic thin films and the inorganic thin films have heterojunction, and said periodic lamination structure has super-lattice structure comprising repetition of the heterojunction.
Claim 17
Dependent Claim
22 words
The semiconductor device of Claim 11, wherein said organic thin films is insulating, and said inorganic thin film is conductive or semiconductive.
Claim 18
Dependent Claim
18 words
The semiconductor device of Claim 11, wherein said inorganic thin film is formed by vapor deposition or sputtering.
Claim 19
Dependent Claim
16 words
The semiconductor device of Claim 14, wherein said vapor deposition is deposition using electron beam heating.
Claim 20
Dependent Claim
30 words
The semiconductor device of Claim 11, wherein said organic thin film is a thin film of an organic compound having a hydropholic part and a hydrophobic part in the molecule.
Claim 21
Dependent Claim
19 words
The semiconductor device of Claim 12, wherein the number of interfaces of the heterojunction interface is 2 to 20.
Claim 22
Dependent Claim
17 words
The semiconductor device of Claim 12, wherein the number of a heterojunction interface is 2 to 10.
Claim 23
Dependent Claim
22 words
The semiconductor device of Claim 11, wherein said organic thin film has a film thickness of several Å to several hundred Å.
Claim 24
Dependent Claim
21 words
The semiconductor device of Claim 11, wherein said organic thin film has a film thickness of 10 Å to 100 Å.
Claim 25
Dependent Claim
22 words
The semiconductor device of Claim 11, wherein said inorganic thin film has a film thickness of several Å to several hundred Å.
Claim 26
Dependent Claim
21 words
The semiconductor device of Claim 11, wherein said inorganic thin film has a film thickness of 10 Å to 100 Å.
Claim 27
Dependent Claim
22 words
The semiconductor device of Claim 11, wherein said inorganic thin film is a thin film formed with a metal or an alloy.
Claim 28
Dependent Claim
18 words
The semiconductor device of Claim 23, wherein said metal or alloy comprises Al, Ag, Au, Ni or Pt.
Claim 29
Dependent Claim
65 words
The semiconductor device of Claim 11, wherein said inorganic thin film is a thin film formed with a substance containing an element selected from Group IVB and a substance containing an element selected from Group IIIB and an element selected from Group VB, or a substance containing an element selected from Group IIB and an element selected from Group VIB of the long-form periodic table.
Claim 30
Dependent Claim
17 words
The semiconductor device of Claim 25, wherein said element selected from Group IVB is C or Si.
Claim 31
Dependent Claim
28 words
The semiconductor device of Claim 25, wherein said element selected from Group IIIB is Ga or In and said element selected from Group VB is As or P.
Claim 32
Dependent Claim
29 words
The semiconductor device of Claim 25, wherein said element selected from Group IIB is Cd or Zn and said element selected from Group VIB is S, se or O.
Claim 33
Dependent Claim
19 words
The semiconductor device of Claim 11, wherein said inorganic thin film is a thin film formed with a silicide.
Claim 34
Dependent Claim
15 words
The semiconductor device of Claim 29, wherein said silicide is nickel silicide or palladium silicide.
References Cited (Backward Citations)
No citation records indexed.
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