Co-base alloy sputter target and process of manufacturing thereof
Abstract
Abstract This invention relates to a Co-base alloy sputter target comprising an f.c.c. phase and an h.c.p. phase and a value of an X-ray diffraction peak intensity ratio of I fcc(200) /I hcp(101) thereof is smaller than that of the I fcc(200) /I hcp(101) of a Co-base alloy obtained when a base alloy comprising an f.c.c. single-phase is cooled to a normal temperature from a high temperature at which it is in molten condition. This invention Co-base alloy sputter target is manufactured by applying a cold-working treatment to a Co-base alloy produced by cooling a Co-base alloy material comprising an f.c.c. single-phase from a high temperature.
Inventors
- 👤 Kyuzo Nakamura
- 👤 Yoshifumi Ota
- 👤 Taiki Yamada
- 👤 Michio Ishikawa
- 👤 Noriaki Umenosato-Ryo Tani
- 👤 Yasushi Umenosato-Ryo Higuchi
Bibliographic Details
Claims Analysis
Total Claims: 4References Cited (Backward Citations)
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