EP0251650A1
Expired / Lapsed
EP
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Process for the formation of phosphosilicate glass coating
Assignee: Fujitsu Ltd
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Filing: 1987-06-23
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Granted: —
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Expires: 2007-06-23
Abstract
Abstract A coating of phosphosilicate glass is deposited on a substrate by a chemical vapor deposition method, using a reaction gas consisting of monosilane, phosphine, and oxygen, in admixture with ammonia gas, thereby to minimise the undesirable formation and adhesion to the substrate surface of particulate by-products such as Si0₂, P₂0₅, and H₂Si0₃. At the same time step coverage can be improved.
Inventors
- 👤 Masahide Nishimura
- 👤 Kanetake Takasaki
- 👤 Kenji Koyama
- 👤 Atsuhiro Tsukune
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 23:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
40 words
A process for formation of a coating of phosphosilicate glass on a substrate by a chemical vapor deposition method, in which a reaction gas comprising monosilane, phosphine and oxygen is introduced into a reaction chamber in admixture with ammonia gas.
Claim 2
Dependent Claim
40 words
A process for formation of a coating of phosphosilicate glass on a substrate by a chemical vapor deposition method, in which a reaction gas comprising monosilane, phosphine and oxygen is introduced into a reaction chamber in admixture with ammonia gas.
Claim 3
Dependent Claim
25 words
A process according to claim 1, in which the gases making up the reaction gas are introduced separately or in combination into the reaction chamber.
Claim 4
Dependent Claim
32 words
A process according to claim 1 or 2, in which the volume ratio of ammonia gas to monosilane gas in the reaction gas is within the range of from 0.1:1 to 100:1.
Claim 5
Dependent Claim
34 words
A process according to claim 3, wherein the amount of NH₃ in relation to SiH₄ and PH₃ is from 2 to 13% by vol. and the 0₂/SiH₄ volume ratio is from 1.5:1 to 10:1.
Claim 6
Dependent Claim
29 words
A process according to any one of claims 1 to 4, in which the chemical vapor deposition reactions are carried out at a temperature of from 300 to 450°C.
Claim 7
Dependent Claim
20 words
A process according to any one of claims 1 to 5 which is used in the production of semiconductor devices.
Claim 8
Dependent Claim
20 words
A process according to any preceding claim, which is carried out using a hot-wall reduced pressure chemical vapor deposition reactor.
Claim 9
Dependent Claim
22 words
A process according to any one claims 1 to 6, which is carried out using an atmospheric pressure chemical vapor deposition reactor.
References Cited (Backward Citations)
EP0047112A2
Cited
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