EP0047112A2
Expired / Lapsed
EP
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Method of forming phosphosilicate glass films
Assignee: Fujitsu Ltd
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Filing: 1981-08-21
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Granted: —
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Expires: 2001-08-21
Abstract
Abstract A method of forming a phosphosilicate glass film during the manufacture of a semiconductor device by the low pressure chemical vapour deposition technique includes the steps of placing a number of semiconductor substrates (27) to be treated in an elongate reaction tube (20) with the principal surfaces of the substrates (27) substantially parallel to tone another and substantially perpendicular to the longitudinal axis of the reaction tube (20), and introducing a silicon compound gas and an oxidising gas into the reaction tube (20) while maintaining the inside of the reaction tube (20) at a reduced low pressure so that phosphosilicate glass films are deposited on the principal surfaces of the substrates (27). To improve the uniformity and quality of the deposited film at least two gas feed pipes (33 and 34) both having gas outlets (25 and 35) distributed along them are arranged along the inside of the reaction tube (20). The silicon compound gas is then introduced through another of the gas feed pipes (34). This ensures a more uniform mixing of the gases and thereby ensures a more uniform quality of the phosphosilicate glass films.
Inventors
- 👤 Hidekazu Miyamoto
- 👤 Mamoru Maeda
- 👤 Yoshimi Shioya
- 👤 Mikio Takagi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 07:17
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45514; C23C16/45563; C23C16/45578; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
167 words
A method of forming a phosphosilicate glass film during the manufacture of a semiconductor device including the steps of placing a number of semiconductor substrates (27) to be treated in an elongate reaction tube (20) with the principal surfaces of the substrates (27) substantially parallel to one another and substantially perpendicular to the longitudinal axis of the reaction tube (20), and introducing a silicon compound gas and an oxidising gas into the reaction tube (20) while maintaining the inside of the reaction tube (20) at a reduced low pressure so that phosphosilicate glass films are deposited on the principal surfaces of the substrates (27) characterised in that at least two gas feed pipes (33 and 34) both having gas outlets (25 and 35) distributed along them are arranged along the inside of the reaction tube (20) end in that the silicon compound gas is introduced through one of the gas feed pipes (33) and the oxidising gas is introduced through another of the gas feed pipes (34).
Claim 2
Independent Claim
167 words
A method of forming a phosphosilicate glass film during the manufacture of a semiconductor device including the steps of placing a number of semiconductor substrates (27) to be treated in an elongate reaction tube (20) with the principal surfaces of the substrates (27) substantially parallel to one another and substantially perpendicular to the longitudinal axis of the reaction tube (20), and introducing a silicon compound gas and an oxidising gas into the reaction tube (20) while maintaining the inside of the reaction tube (20) at a reduced low pressure so that phosphosilicate glass films are deposited on the principal surfaces of the substrates (27) characterised in that at least two gas feed pipes (33 and 34) both having gas outlets (25 and 35) distributed along them are arranged along the inside of the reaction tube (20) end in that the silicon compound gas is introduced through one of the gas feed pipes (33) and the oxidising gas is introduced through another of the gas feed pipes (34).
Claim 3
Dependent Claim
30 words
A method according to claim 1, wherein the silicon compound gas includes monosilane (SiH 4 ) and phosphine (PH 3 ) and the oxidising gas includes oxygen (O 2 ).
Claim 4
Dependent Claim
33 words
A method according to claim 2, wherein the mol ratio of phosphine to phosphine and monosilane (PH 3 /PH 3 + SiH 4 ) in the silicon compound gap is 0.08 or less.
Claim 5
Independent Claim
48 words
A method according to any one of the preceding claims, wherein the gas outlets (25 and 35) distributed along the gas feed pipes (33 and 34) are formed by a number of small holes arranged to direct streams of gas around the walls of the reaction tube (20).
Claim 6
Independent Claim
137 words
A method for manufacturing a semiconductor device comprising the steps of: (a) placing plural substrates for semiconductor devices to be treated in a reaction tube in such a state that the main surfaces of said substrates are substantially vertically aligned to one another and substantially perpendicularly intersect the central axis of the reaction tube, said reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof; and (b) introducing a silicon compound gas through one of the gas feed pipes into the reaction tube and introducing an oxidising gas through the other of the gas feed pipes into the reaction tube, while maintaining the inside of the reaction tube under a reduced low pressure, whereby phosphosilicate glass films are deposited on the main surfaces of said substrates.
Claim 7
Independent Claim
137 words
A method for manufacturing a semiconductor device comprising the steps of: (a) placing plural substrates for semiconductor devices to be treated in a reaction tube in such a state that the main surfaces of said substrates are substantially vertically aligned to one another and substantially perpendicularly intersect the central axis of the reaction tube, said reaction tube being provided with at least two gas feed pipes having plural small openings pierced along the longitudinal direction thereof; and (b) introducing a silicon compound gas through one of the gas feed pipes into the reaction tube and introducing an oxidising gas through the other of the gas feed pipes into the reaction tube, while maintaining the inside of the reaction tube under a reduced low pressure, whereby phosphosilicate glass films are deposited on the main surfaces of said substrates.
References Cited (Backward Citations)
No citation records indexed.
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