Patent FR2345181B3 successfully refreshed from Google Patents.
Patent EP0249755A2 successfully refreshed from Google Patents.
EP0249755A2
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EP
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Hybrid integrated circuit apparatus
Assignee: Denso Corp
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Filing: 1987-05-18
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Granted: —
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Expires: 2007-05-18
Abstract
Abstract A multilayer substrate (11) is constituted by laminating a plurality of sheet substrate (111, 112,...), the respective sheet substrates are constituted by forming conductive layers (121, 122,...) of a refractory metal such as W on ceramic green sheets mainly containing an alumina ceramic, and the ceramic green sheets are laminated and sintered to constitute the multilayer substrate. Conductive material layers (201,202,...) are formed on the surface of the multilayer substrate so as to be selectively connected to the conductive layers, and copper-plated layers (221, 212,...) are formed on the conductive material layers. Thick film conductor layers (151, 152,...) are formed on the copper-plated layers to constitute terminal conductors, and, for example, a thick film resistor layer (22) is connected to the terminal conductors.
Inventors
- 👤 Takashi Nagasaka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 10:56
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/22; H05K3/24; H05K3/245; H05K3/246; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H10W70/60; H10W70/611; H10W70/62; H10W70/66; H10W70/67; H10W70/68; H10W70/685; H05K1/00; H05K1/02; H05K1/09; H05K1/092; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49163; Y10T29/49169
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
83 words
A hybrid integrated circuit apparatus characterized in that conductive material layers (201, 202,...) to be selectively connected to conductive layers (121, 122,...) formed on a sintered substrate (11) are exposed on a surface of said substrate and conductor layers (151, 152,...) are formed on said conductive material layers so as to be electrically connected thereto, characterized in that copper-plated layers (211, 212,...) are formed on at least portions of said conductive material layers and said conductor layers are formed on said copper-plated layers.
Claim 2
Dependent Claim
83 words
A hybrid integrated circuit apparatus characterized in that conductive material layers (201, 202,...) to be selectively connected to conductive layers (121, 122,...) formed on a sintered substrate (11) are exposed on a surface of said substrate and conductor layers (151, 152,...) are formed on said conductive material layers so as to be electrically connected thereto, characterized in that copper-plated layers (211, 212,...) are formed on at least portions of said conductive material layers and said conductor layers are formed on said copper-plated layers.
Claim 3
Dependent Claim
28 words
An apparatus according to claim 1, characterized in that said substrate (11) is constituted by a multilayer substrate obtained by laminating a plurality of sheet substrates (111, 112,...).
Claim 4
Dependent Claim
72 words
An apparatus according to claim 1, characterized in that said substrate (11) is constituted by a single multilayer substrate obtained by laminating a plurality of ceramic green sheets which contain an alumina ceramic as the major constituent, said ceramic green sheets being formed such that conductive layers (121, 122,...) constituted by the conductive material having the melting point higher than the sintering temperature of said substrate are respectively formed on surfaces thereof.
Claim 5
Dependent Claim
99 words
An apparatus according to claim 1, characterized in that said substrate (11) is constituted by a single multilayer substrate obtained by laminating and sintering a plurality of sheet substrates (111, 112,...) which contain an alumina ceramic as its major constituent, said sheet substrate being formed such that conductive layers (121, 122,...) constituted by the conductive material having the melting point higher than the sintering temperature of said substrate are respectively formed on surfaces thereof, said conductive layers being exposed on the surface of said multilayer substrate so that conductive material layers (201, 202,...) are formed on said substrate surface.
Claim 6
Dependent Claim
27 words
An apparatus according to claim 1, characterized in that said copper-plated layers (211, 212,...) are so formed as to cover the entire conductive material layers (201, 202,...).
Claim 7
Dependent Claim
28 words
An apparatus according to claim 1, characterized in that said copper-plated layers (216, 217,...) are so formed as to cover portions of said conductive material layers (205, 206,...)..
Claim 8
Dependent Claim
31 words
An apparatus according to claim 1, characterized in that said copper-plated layers (211, 212,...) are formed so that a film thickness thereof falls within a range of 2 to 4 µm.
Claim 9
Dependent Claim
47 words
An apparatus according to claim 1, characterized in that said conductor layers (151, 152,...) are constituted by thick film conductor layers formed on at least portions of said copper-plated layers (211, 212,...), said thick film conductor layers forming patterns extending to positions where circuit elements are connected.
Claim 10
Dependent Claim
38 words
An apparatus according to claim 1, characterized in that said conductor layers (151, 152,...) are constituted by thick film conductor layers printed on at least portions of said copper-plated layers (211, 212,...) and baked in a nitrogen atmosphere.
Claim 11
Dependent Claim
25 words
An apparatus according to claim 1, characterized in that said conductor layers are constituted by solder layers (233, 234) connected to circuit elements (24, 26).
Claim 12
Dependent Claim
54 words
A hybrid integrated circuit apparatus characterized in that conductive material layers (201, 202,...) to be selectively connected to conductive layers (121, 122,...) formed on a sintered substrate (11) are exposed on a surface of said substrate, characterized in that at least portions of said conductor material layers are covered with copper-plated layers (211, 212,...).
Claim 13
Dependent Claim
54 words
A hybrid integrated circuit apparatus characterized in that conductive material layers (201, 202,...) to be selectively connected to conductive layers (121, 122,...) formed on a sintered substrate (11) are exposed on a surface of said substrate, characterized in that at least portions of said conductor material layers are covered with copper-plated layers (211, 212,...).
Claim 14
Dependent Claim
31 words
An apparatus according to claim 11, characterized in that said copper-plated layers (211, 212,...) are formed so that a film thickness thereof falls within a range of 2 to 4 µm.
References Cited (Backward Citations)
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