Patent SE33810C1 successfully refreshed from Google Patents.
Patent EP0247783A2 successfully refreshed from Google Patents.
EP0247783A2
Expired / Lapsed
EP
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Method of refractory metal deposition
Assignee: Massachusetts Institute of Technology
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Filing: 1987-05-20
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Granted: —
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Expires: 2007-05-20
Abstract
Abstract A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF 6 , MoFe or TiCl 4 with SiH 4 and an inert gas, such as Argon. A preferably substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.
Inventors
- 👤 Jerry G. Black
- 👤 Daniel J. Ehrlich
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 02:28
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; C23C16/06; C23C16/08; C23C16/22; C23C16/30; C23C16/42; C23C16/44; C23C16/48; C23C16/483; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/412; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10W20/064; H10W20/066; H10W20/067; H10W20/068
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
156 words
A method of forming a refractory metal or refractory metal silicide pattern on a semiconductor substrate located within a reaction chamber comprising the steps of: a) introducing a flowing gas mixture of two reactants and an inert gas wherein the reactants comprise: (i) a refractory metal gaseous fluoride or chloride (RMG) compound, and a (ii) silicon (Si) or germanium (GE) atom containing gaseous compound, and (iii) wherein the RMG compound is taken from the group comprising: W, Mo, Ti fluorides or chlorides; and b) subjecting said mixture to laser irradiation using a level of laser irradiation power sufficient to initiate, localize, and guide the reaction between the two reactants; with the Si or Ge compound providing a catalyst to sustain the reaction, resulting in the desired pattern being formed on said substrate by deposit of said refractory metal or refractory metal silicide depending on the ratio of the RMG compound to the Si or Ge compound.
Claim 2
Independent Claim
156 words
A method of forming a refractory metal or refractory metal silicide pattern on a semiconductor substrate located within a reaction chamber comprising the steps of: a) introducing a flowing gas mixture of two reactants and an inert gas wherein the reactants comprise: (i) a refractory metal gaseous fluoride or chloride (RMG) compound, and a (ii) silicon (Si) or germanium (GE) atom containing gaseous compound, and (iii) wherein the RMG compound is taken from the group comprising: W, Mo, Ti fluorides or chlorides; and b) subjecting said mixture to laser irradiation using a level of laser irradiation power sufficient to initiate, localize, and guide the reaction between the two reactants; with the Si or Ge compound providing a catalyst to sustain the reaction, resulting in the desired pattern being formed on said substrate by deposit of said refractory metal or refractory metal silicide depending on the ratio of the RMG compound to the Si or Ge compound.
Claim 3
Dependent Claim
23 words
A process as claimed in claim 1, characterised in that the substrate has an exposed polyimide surface upon which the pattern is formed.
Claim 4
Dependent Claim
39 words
A process as claimed in claim 1, characterised in that the laser irradiation power level is in the order of 40 mW and the ratio of RMG compound to the Si gaseous compound is between about 1:1 and 1:20.
Claim 5
Dependent Claim
93 words
A process of repairing interconnection defects in substrates comprising the steps of: a) forming a stress relieving protective layer on said substrate; b) forming openings in the protective layer to points on the substrate which should be interconnected to repair the defect; c) depositing a refractory metal in said openings and on said polyimide by low temperature pyrolysis of a mixture of a flowing inert gas and a refractory metal gaseous compound and a silicon or germanium containing gaseous compound using a low power laser beam to initiate and direct the interconnection pattern.
Claim 6
Dependent Claim
93 words
A process of repairing interconnection defects in substrates comprising the steps of: a) forming a stress relieving protective layer on said substrate; b) forming openings in the protective layer to points on the substrate which should be interconnected to repair the defect; c) depositing a refractory metal in said openings and on said polyimide by low temperature pyrolysis of a mixture of a flowing inert gas and a refractory metal gaseous compound and a silicon or germanium containing gaseous compound using a low power laser beam to initiate and direct the interconnection pattern.
Claim 7
Dependent Claim
26 words
A process as claimed in claim 4, characterised in that the substrate is a multi-chip or hybrid carrier comprised of glass, semiconductor, ceramic or epoxy material.
Claim 8
Independent Claim
89 words
A method of forming a pattern of a reaction product on a substrate located within a reaction chamber comprising the steps of: a) introducing a flowing gas mixture of WF 6 and SiH 4 and an inert gas; and b) subjecting said mixture to laser irraidation using a level of laser irradiation power sufficient to initiate the reaction between the WF 6 and SiH 4 with the SiH 4 providing a catalyst to sustain the reaction resulting in the desired pattern of reaction product being formed on said substrate.
Claim 9
Independent Claim
89 words
A method of forming a pattern of a reaction product on a substrate located within a reaction chamber comprising the steps of: a) introducing a flowing gas mixture of WF 6 and SiH 4 and an inert gas; and b) subjecting said mixture to laser irraidation using a level of laser irradiation power sufficient to initiate the reaction between the WF 6 and SiH 4 with the SiH 4 providing a catalyst to sustain the reaction resulting in the desired pattern of reaction product being formed on said substrate.
Claim 10
Dependent Claim
31 words
A method as claimed in claim 6, characterised in that the ratio of WF 6 to SiH 4 is relatively high and a low resistivity metallic pattern of W is formed.
Claim 11
Dependent Claim
34 words
A method as claimed in claim 6, characterised in that the ratio of WF 6 to SiH 4 is relatively low and a resistance pattern of predetermined value, based on such ratio, is formed.
Claim 12
Dependent Claim
23 words
A method as claimed in claim 6, characterised in that the substrate has an exposed polyimide surface upon which the pattern is formed.
Claim 13
Dependent Claim
37 words
A method as claimed in claim 6, characterised in that the laser irradiation power level is in the order of 40 mW and the ratio of WF 6 to SiH 4 is between about 1:1 and 1:20.
Claim 14
Independent Claim
84 words
The method of providing interconnections for regions formed in substrates comprising the steps of: a) forming a polyimide layer on said substrate; b) forming openings in the substrate to regions to be interconnected; c) depositing a refractory metal in said openings and on said polyimide by low temperature pyrolysis of a mixture of an inert gas and WF 6 , MoF 6 or TiCl 4 and an Si containing gaseous compound using a low power laser beam to initiate and direct the interconnection pattern.
Claim 15
Independent Claim
84 words
The method of providing interconnections for regions formed in substrates comprising the steps of: a) forming a polyimide layer on said substrate; b) forming openings in the substrate to regions to be interconnected; c) depositing a refractory metal in said openings and on said polyimide by low temperature pyrolysis of a mixture of an inert gas and WF 6 , MoF 6 or TiCl 4 and an Si containing gaseous compound using a low power laser beam to initiate and direct the interconnection pattern.
References Cited (Backward Citations)
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