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EP0247503A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of driving a solid state imager device

Assignee: Sony Corp
•
Filing: 1987-05-19
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Granted: —
•
Expires: 2007-05-19
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Abstract

Abstract The solid state imager device has a substrate (1) of a first conductivity type, a charge storage area (2) of a second conductivity type formed on the substrate (1) of the first conductivity type, and a forward electrode (4) formed on the charge storage area (2) of the second conductivity type through an insulating layer (3), and the forward electrode (4) is alternately supplied with a first voltage (V₁) for accumulating charges of the first conductivity type on a boundary between the charge storage area (2) of the second conductivity type and the insulating layer (3) and a second voltage (V₂) so as to extend the depletion layer formed beneath the charge storage area (2) of the second conductivity type.

Inventors

  • 👤 Michio Yamamura
  • 👤 Hiroshi Terakawa
  • 👤 Tetsuro Kumesawa
  • 👤 Takashi Fukusyo

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 18:39
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F39/1534; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 126 words
A solid state imager device comprising: (a) a substrate (1) of a first conductivity type; (b) a charge storage area (2) of a second conductivity type formed on a surface of said substrate (1) of the first conductivity type; (c) a forward electrode (4) formed on said charge storage area (2) of the second conductivity type which extends through an insulating layer (3); and (d) a means for alternatively supplying said forward electrode (4) with a first voltage (V₁) for accumu­lating charges of the first conductivity type on a boundary between said charge storage area of the second conductivity type and said insulating layer (3) and a second voltage (V₂) for extending the de­pletion layer formed beneath said charge storage area of the second conductivity type.
Claim 2
Dependent Claim 126 words
A solid state imager device comprising: (a) a substrate (1) of a first conductivity type; (b) a charge storage area (2) of a second conductivity type formed on a surface of said substrate (1) of the first conductivity type; (c) a forward electrode (4) formed on said charge storage area (2) of the second conductivity type which extends through an insulating layer (3); and (d) a means for alternatively supplying said forward electrode (4) with a first voltage (V₁) for accumu­lating charges of the first conductivity type on a boundary between said charge storage area of the second conductivity type and said insulating layer (3) and a second voltage (V₂) for extending the de­pletion layer formed beneath said charge storage area of the second conductivity type.
Claim 3
Dependent Claim 38 words
A solid state imager device as claimed in claim 1, wherein the time duty ratio of said second voltage (V₂) to said first voltage (V₁) is selected to be in a range of from about 2 to 5.
Claim 4
Dependent Claim 22 words
A solid state imager device as claimed in claim 1, wherein said first voltage (V₁) is applied within one horizontal blanking period.

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