Semiconductor device comprising an asymmetric blocking thyristor and a diode in series

Abstract

Abstract The series connection of an asymmetrically blocking thyristor (1) and a diode (2) has the advantage over a symmetrically blocking thyristor of a lower stored charge for the same reverse voltage. The series connection is formed by mechanical and electrical connection of the semiconductor bodies of the two devices. To increase the surface breakdown voltage, the edges (15, 16) of the two semiconductor bodies are bevelled in such a way that their edge surfaces continuously merge into each other. <IMAGE>

Inventors

• 👤 Martin Dr. Ing. Bechteler

Bibliographic Details