EP0075945A2
Expired / Lapsed
EP
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Stacked semiconductor device and method for manufacturing the device
Assignee: Toshiba Corp
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Filing: 1982-09-29
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Granted: —
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Expires: 2002-09-29
Abstract
Abstract Provided is a stacked semiconductor device wherein a plurality of semiconductor layers (11, 13) integrated with semiconductor elements are stacked with an insulating layer (16) interposed between two adjacent of said semiconductor layers (11, 13). This semiconductor device has one or more inclined faces extending over two or more of said semiconductor layers (11, 13). These inclined faces are formed thereon with an interconnection layer (28) or semiconductor element for effecting the transmission and reception of signals between circuits, having said semiconductor elements, formed in the different semiconductor layers, through another insulating layer (27).
Inventors
- 👤 Tadashi Shibata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 13:30
CPC Classifications
G; G11; G11C; G11C5/00; H; H10; H10D; H10D62/00; H10D62/10; H10D62/117; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10W; H10W10/00; H10W10/10; H10W10/181; H10W20/00; H10W20/40; H10W20/41; H10W20/435; H10W70/00; H10W70/099; H10W90/00; H10W72/00; H10W72/834; H10W90/20; H10W90/22; H10W90/701; H10W90/731; H10W90/732
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
94 words
A stacked semiconductor device wherein a plurality of semiconductor layers (11, 13) integrated with semiconductor elements are stacked with an insulating layer (16) interposed between two adjacent of said semiconductor layers (11, 13), characterized in that said stacked semiconductor layers has at least one inclined face extending over two or more of said semiconductor layers (11, 13), said inclined face being formed thereon with at least one element (28) for effecting the transmission and reception of signals between circuits, having said semiconductor elements, formed in the different semiconductor layers, through another insulating layer (27).
Claim 2
Dependent Claim
94 words
A stacked semiconductor device wherein a plurality of semiconductor layers (11, 13) integrated with semiconductor elements are stacked with an insulating layer (16) interposed between two adjacent of said semiconductor layers (11, 13), characterized in that said stacked semiconductor layers has at least one inclined face extending over two or more of said semiconductor layers (11, 13), said inclined face being formed thereon with at least one element (28) for effecting the transmission and reception of signals between circuits, having said semiconductor elements, formed in the different semiconductor layers, through another insulating layer (27).
Claim 3
Dependent Claim
25 words
The stacked semiconductor device according to claim 1, characterized in that said inclined face is formed on the side face of said stacked semiconductor layers.
Claim 4
Dependent Claim
31 words
The stacked semiconductor device according to claim 1, characterized in that said inclined face is constituted by a side wall of a groove or hole formed in said stacked semiconductor layers.
Claim 5
Dependent Claim
33 words
The stacked semiconductor device according to any one of the preceding claims 1 to 3, characterized in that said element for effecting the transmission and reception of signals is an interconnection layer (28).
Claim 6
Dependent Claim
22 words
The stacked semiconductor device according to claim 4, characterized in that said interconnection layer is formed of aluminum or aluminum based alloy.
Claim 7
Dependent Claim
33 words
The stacked semiconductor device according to any one of the preceding claims 1 to 3, characterized in that said element for effecting the transmission and reception of signals consists of a semiconductor element.
Claim 8
Dependent Claim
35 words
The stacked semiconductor device according to claim 6, characterized in that said element for effecting the transmission and reception of signals is a controller (85) for the respective circuits of said semiconductor layers (11, 13).
Claim 9
Dependent Claim
59 words
A method for manufacturing the stacked semiconductor device of claim 1, characterized in that exposure for forming, onto said inclined face, said element for effecting the transmission and reception of signals is carried out in a state wherein the semiconductor wafer is kept so inclined that said inclined face may be made perpendicular to an axis of said exposure.
References Cited (Backward Citations)
No citation records indexed.
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